®
74H1G66
SINGLE BILATERAL SWITCH
s
s
s
s
s
s
HIGH SPEED: t
PD
= 4 ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1
µA
(MAX.) at T
A
= 25
o
C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28% V
CC
(MIN.)
LOW ”ON” RESISTANCE
R
ON
= 50
Ω
(TYP.)AT V
CC
=9V I
I/O
=100
µ
A
SINE WAVE DISTORTION
0.042% (TYP.) AT V
CC
=4V f=1KHz
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 12V
S
(SOT23-5L)
ORDER CODES :
74H1G66S
performance combined with true CMOS low
power consumption.
The C input is provided to control the switch; the
switch is ON when the C input is held high and off
when C is held low.
DESCRIPTION
The 74H1G66 is an high-speed CMOS SINGLE
BILATERAL SWITCH fabricated in silicon gate
C
2
MOS technology. It has high speed
PIN CONNECTION AND IEC LOGIC SYMBOLS
February 2000
1/8
74H1G66
LOGIC DIAGRAM
PIN DESCRIPTION
PIN No
1
2
4
3
5
SYMBOL
I/O
O/I
C
GND
V
CC
NAME AND FUNCT ION
Independent Input/Output
Independent Output/Input
Enable Input (Active
HIGH)
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
CONTROL
H
L
SWITCH F UNCTIO N
ON
OFF
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
I/O
I
IK
I
IOK
I
O
P
D
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Input/Output Voltage
Control Input DC Diode Current
Input/Output DC Diode Current
DC Output Source Sink Current Per Output Pin
Power Dissipation
Storage Temperature
Lead Temperature (10 sec)
Parameter
Value
-0.5 to +13
-0.5 to V
CC
+0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500 (*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
o
o
I
CC
or I
GND
DC V
CC
or Ground Current
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*) 500mW:
≡
65
o
C derate to 300 mW by 10 mW/
o
C: 65
o
C to85
o
C
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
I/O
T
op
t
r
, t
f
Supply Voltage
Input Voltage (Control)
Input/Output Voltage
Operating Temperature
Input Rise and Fall Time
V
CC
= 2V
V
CC
= 4.5V
V
CC
= 6V
V
CC
= 10V
Parameter
Valu e
2.0 to 12
0 to V
CC
0 to V
CC
-40 to +85
0 to 1000
0 to 500
0 to 400
0 to 250
Unit
V
V
V
o
C
ns
2/8
74H1G66
DC SPECIFICATIONS
Symb ol
Parameter
T est Cond ition s
V
CC
(V)
V
IH
High Level Input
Voltage
2.0
4.5
9.0
12.0
V
IL
Low Level Input
Voltage
2.0
4.5
9.0
12.0
R
ON
ON Resistance
4.5
9.0
12.0
4.5
9.0
12.0
I
OFF
Input/Output Leakage
Current (SWITCH OFF)
Switch Input Leakage
Current (SWITCH ON,
OUTPUT OPEN)
Control Input Current
Quiescent Supply
Current
12.0
V
I
= V
IH
V
I/ O
= V
CC
to GND
I
I /O
≤
1mA
V
I
= V
IH
V
I /O
= V
CC
or GND
I
I /O
≤
1mA
V
OS
= V
CC
to GND
V
IS
= V
CC
to GND
V
I
= V
I L
V
OS
= V
CC
to GND
V
I
= V
IH
V
I
= V
CC
to G ND
V
I
= V
CC
or GND
96
55
45
70
50
45
o
Value
T
A
= 25 C
Min.
1.5
3.15
6.3
8.4
0.5
1.35
2.7
3.6
170
85
80
100
75
70
±0.1
Typ .
Max.
-40 to 85 C
Min .
1.5
3.15
6.3
8.4
0.5
1.35
2.7
3.6
200
100
90
130
95
90
±1.0
Max.
o
Un it
V
V
Ω
µ
A
I
IZ
12.0
±0.1
±1.0
µA
µ
A
µ
A
I
IN
I
CC
6.0
6.0
9.0
12.0
±
0.1
1
4
8
±
1.0
10
40
80
3/8
74H1G66
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
=6 ns)
Symb ol
Parameter
V
CC
(V)
Φ
I/O
Phase Difference
Between Input and
Output
2.0
4.5
9.0
12.0
2.0
4.5
9.0
12.0
2.0
4.5
9.0
12.0
2.0
4.5
9.0
12.0
R
L
= 1 K
Ω
Test Co ndition
o
Value
T
A
= 25 C
Min. Typ . Max.
10
50
4
3
3
18
8
6
6
20
10
8
8
30
30
30
30
5
6
0.5
15
10
10
10
8
7
100
20
12
12
115
23
20
18
-40 to 85 C
Min . Max.
65
15
13
10
125
25
22
18
145
29
25
22
o
Un it
ns
t
PZL
t
PZH
Output Enable Time
ns
t
PLZ
t
PHZ
Output Disable Time
R
L
= 1 K
Ω
ns
Maximum Control
Input Frequency
R
L
= 1 K
Ω
C
L
= 15 pF
V
OUT
= 1/2V
CC
MHz
C
IN
C
I/O
C
IOS
C
PD
Input Capacitance
Switch Terminal
Capacitance
Feed Through
Capacitance
Power Dissipation
Capacitance (note 1)
pF
pF
pF
pF
1) C
PD
isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. I
CC
(opr) = C
PD
•
V
CC
•f
IN
+ I
CC
ANALOG SWITCH CHARACTERISTICS
(GND = 0 V, T
A
= 25
o
C)
Symb ol
Parameter
V
CC
(V)
4.5
9.0
4.5
9.0
4.5
9.0
4.5
9.0
V
IN
(Vp-p)
4
8
Adjust f
I N
voltage to Obtain odBm at V
OS
.
Increase f
IN
Frequency until dB Meter reads -3dB
R
L
= 50Ω, C
L
= 10pF
V
IN
is centered at V
CC
/2. Adjust input for 0dBm
R
L
= 600Ω, C
L
= 50pF , f
I N
= 1MHz sine wave
R
L
= 600
Ω
, C
L
= 50pF , f
I N
= 1MHz sine wave
(t
r
= t
f
= 6ns)
Test Co nditi on
Value
Un it
Sine Wave Distortion
(THD)
f
MAX
Frequency Responce
(Switch ON)
Feedthrough
Attenuation
(Switch OFF)
Crosstalk (Control
Input to Signal Ouput)
f
IN
= 1 KHz
R
L
= 10K
Ω
C
L
= 50 pF
0.05
0.04
200
200
-60
-60
60
100
%
MHz
dB
mV
4/8
74H1G66
SWITCHING CHARACTERISTICS TEST CIRCUIT
t
PLZ
, t
PHZ
, t
PZL
, t
PZH
.
CROSSTALK (control to output)
BANDWIDTH AND FEEDTHROUGH
ATTENUATION
GND (V
SS
)
C
I–O
C
I/O
MAXIMUM CONTROL FREQUENCY
GND (V
SS
)
5/8
嵌入式系统
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