DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D116
BYQ63
Ripple blocking diode
Product specification
1998 Dec 04
Philips Semiconductors
Product specification
Ripple blocking diode
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed minimum turn-on time
for absorbing forward current
transients and oscillations
•
Specially designed as rectifier in
the auxiliary power supply in e.g.
switched mode power supplies
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
BYQ63
The SOD57 is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
a
MAM047
Fig.1 Simplified outline (SOD57) and symbol.
CONDITIONS
MIN.
−
−
MAX.
300
300
1.05
V
V
A
UNIT
averaged over any 20 ms period;
T
tp
= 85
°C;
lead length = 10 mm;
see Fig.2; see also Fig.4
averaged over any 20 ms period;
T
amb
= 60
°C;
PCB mounting (Fig.8);
see Fig.3; see also Fig.4
−
−
0.68
A
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
T
tp
= 85
°C
T
amb
= 60
°C
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
−
−
−
9.6
6.4
30
A
A
A
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+175
°C
°C
1998 Dec 04
2
Philips Semiconductors
Product specification
Ripple blocking diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.5
I
F
= 1 A; see Fig.5
V
R
= V
RRMmax
;
see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.6
t
fr
t
on
forward recovery time
turn-on time
when switched to I
F
= 5 A
in 50 ns; see Fig.9
when switched from V
F
= 0 to
V
F
= 3 V; measured between
10% and 90% of I
Fmax
;
see Fig.11
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.11
f = 1 MHz; V
R
= 0; see Fig.7
MIN.
−
−
−
−
−
400
TYP.
−
−
−
−
−
−
MAX.
1.3
2.15
5
150
1.5
−
BYQ63
UNIT
V
V
µA
µA
µs
ns
t
rr
reverse recovery time
−
−
150
ns
C
d
diode capacitance
−
35
−
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.8.
For more information please refer to the
‘General Part of associated Handbook.’
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length = 10 mm
note 1
VALUE
46
100
UNIT
K/W
K/W
1998 Dec 04
3
Philips Semiconductors
Product specification
Ripple blocking diode
GRAPHICAL DATA
2
MLB533
BYQ63
handbook, halfpage
handbook, halfpage
1
MLB534
I F(AV)
(A)
I F(AV)
(A)
lead length 10 mm
1
0.5
0
0
100
T tp (
o
C)
200
0
0
100
Tamb (
o
C)
200
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.8.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
3
P
(W)
2
a=3
2.5
MLB532
MBD427
handbook, halfpage
8
IF
(A)
6
2
1.57
1.42
4
1
2
0
0
0.5
I F(AV) (A)
1
0
0
2
4
VF (V)
6
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Dotted line: T
j
= 175
°C.
Solid line: T
j
= 25
°C.
Fig.5
Forward current as a function of forward
voltage; maximum values.
1998 Dec 04
4
Philips Semiconductors
Product specification
Ripple blocking diode
BYQ63
handbook, halfpage
10
3
MGC550
10
2
handbook, halfpage
MBD437
IR
(µA)
10
2
Cd
(pF)
10
10
1
0
100
Tj (°C)
200
1
1
10
10
2
10
3
V R (V)
10
4
V
R
= V
RRMmax
.
f = 1 MHz; T
j
= 25
°C.
Fig.6
Reverse current as a function of junction
temperature; maximum values.
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
50
25
handbook, halfpage
V
MGC500
F
7
50
t fr
IF
100% 110%
t
2
3
MGA200
10%
t
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
Fig.9 Forward recovery time definition.
1998 Dec 04
5
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