Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYQ60EW series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.85 V
I
O(AV)
= 60 A
I
RRM
≤
0.2 A
t
rr
≤
35 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYQ60EW series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
SOT429 (TO247)
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
square wave
δ
= 0.5; T
mb
≤
82 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
82 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RWM(max)
Repetitive peak reverse current t
p
= 2
µs; δ
= 0.001
per diode
Non-repetitive peak reverse
t
p
= 100
µs
current per diode
Storage temperature
Operating junction temperature
Average rectified output current
(both diodes conducting)
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
CONDITIONS
BYQ60EW
-
-
-
-
-
-
-
-
-
-40
-
MIN.
-150
150
150
150
60
60
380
414
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
I
RRM
I
RSM
T
stg
T
j
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
December 1998
1
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air
MIN.
-
-
-
BYQ60EW series
TYP.
-
-
45
MAX.
0.85
0.6
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
characteristics arre per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 30 A; T
j
= 150˚C
I
F
= 30 A
I
F
= 60 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100 ˚C
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP.
0.73
0.95
1.07
10
1
10
27
0.7
MAX.
0.85
1.1
1.2
200
2
20
35
-
UNIT
V
V
V
µA
mA
nC
ns
V
December 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
I
dI
F
dt
F
35
30
Forward dissipation, PF (W)
BYQ60EW
Tmb(max) (C)
120.25
1.9
124.5
2.2
a = 1.57
128.75
133
137.25
141.5
145.75
150
t
rr
time
25
4
20
15
10
2.8
Q
I
R
I
s
10%
100%
5
0
rrm
0
5
10
15
20
25
Average forward current, IF(AV) (A)
30
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
)per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
I
F
1000
trr / ns
BYQ60EW
IF = 1 A
time
100
VF
V
VF
time
fr
10
1
10
dIF/dt (A/us)
100
Fig.2. Definition of V
fr
Fig.5. Typical t
rr
at T
j
= 25 ˚C.
Forward dissipation, PF (W)
45
40
35
30
25
20
15
10
5
0
0
0.1
0.2
BYQ60EW
0.5
Tmb(max) (C)
111.75
D = 1.0
116
120.25
124.5
128.75
tp
D = tp/T
10
Irrm / A
BYQ60EW
1
IF = 1 A
133
137.25
141.5
145.75
150
50
0.1
T
10
20
30
40
Average forward current, IF(AV) (A)
0.01
1
10
-dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Typical I
rrm
at T
j
= 25 ˚C.
December 1998
3
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ60EW series
Forward Current, IF (A)
60
55
50
45
40
35
30
25
20
15
10
5
0
0
Tj = 150 C
Tj = 25 C
typ
BYQ60EW
max
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage, VF (V)
1
1.1 1.2 1.3
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Qs / nC
100
BYQ60EW
IF=5A
10
IF=1A
IF=2A
1
1
10
-dIF/dt (A/us)
100
Fig.8. Typical Q
s
at T
j
= 25 ˚C.
Transient Thermal Impedance, Zth j-mb (K/W)
1
Single pulse
0.1
BYQ60EW
P
D
0.01
tp
t
0.001
1E-06
1E-05
1E-04
1E-03 1E-02 1E-01
pulse width, tp (s)
1E+00 1E+01
Fig.9. Transient thermal impedance; Z
th j-hs
= f(t
p
).
December 1998
4
Rev 1.000
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
5.3
3.5
21
max
15.5
max
seating
plane
7.3
16 max
5.3 max
1.8
o 3.5
max
BYQ60EW series
2.5
4.0
max
1
2.2 max
3.2 max
5.45
2
3
0.9 max
1.1
5.45
0.4 M
15.5
min
Fig.10. SOT429 (TO247); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
December 1998
5
Rev 1.000
微控制器 MCU
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