DISCRETE SEMICONDUCTORS
DATA SHEET
BUW11F; BUW11AF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
•
Converters
•
Inverters
•
Switching regulators
•
Motor control systems.
PINNING
PIN
1
2
3
mb
DESCRIPTION
base
collector
emitter
mounting base;
electrically isolated
Front view
MSB012
BUW11F; BUW11AF
ook, halfpage
handbook, halfpage
2
1
MBB008
3
1
2
3
Fig.1 Simplified outline (SOT199) and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CESM
BUW11F
BUW11AF
V
CEO
collector-emitter voltage
BUW11F
BUW11AF
V
CEsat
I
Csat
collector-emitter saturation voltage
collector saturation current
BUW11F
BUW11AF
I
C
I
CM
P
tot
t
f
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 2 and 4
t
p
< 20 ms; see Fig.2
T
h
≤
25
°C;
see Fig.3
resistive load; see Figs 8 and 9
3
2.5
5
10
32
0.8
A
A
A
A
W
µs
open base
400
450
1.5
V
V
V
PARAMETER
collector-emitter peak voltage
V
BE
= 0
850
1000
V
V
CONDITIONS
MAX.
UNIT
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
R
th j-a
Notes
1. Mounted
without
heatsink compound and 30
±5
N force on centre of package.
2. Mounted
with
heatsink compound and 30
±5
N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
PARAMETER
collector-emitter peak voltage
BUW11F
BUW11AF
V
CEO
collector-emitter voltage
BUW11F
BUW11AF
I
Csat
collector saturation current
BUW11F
BUW11AF
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Notes
1. Mounted
without
heatsink compound and 30
±5
N force on centre of package.
2. Mounted
with
heatsink compound and 30
±5
N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
V
isolM
C
isol
PARAMETER
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
t
p
< 20 ms
T
h
≤
25
°C;
see Fig.3; note 1
T
h
≤
25
°C;
see Fig.3; note 2
see Figs 2 and 4
t
p
< 20 ms; see Fig.2
open base
V
BE
= 0
CONDITIONS
PARAMETER
CONDITIONS
note 2
thermal resistance from junction to ambient
BUW11F; BUW11AF
VALUE
3.95
3.05
35
UNIT
K/W
K/W
K/W
thermal resistance from junction to external heatsink note 1
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−65
−
MAX.
850
1000
400
450
3
2.5
5
10
2
4
32
41
+150
150
V
V
V
V
A
A
A
A
A
A
UNIT
W
W
°C
°C
TYP.
−
−
MAX.
1500
21
V
UNIT
pF
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
PARAMETER
collector-emitter sustaining voltage
BUW11F
BUW11AF
collector-emitter saturation voltage
BUW11F
BUW11AF
base-emitter saturation voltage
BUW11F
BUW11AF
collector saturation current
BUW11F
BUW11AF
collector-emitter cut-off current
CONDITIONS
I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
see Figs 5 and 6
BUW11F; BUW11AF
MIN.
400
450
−
−
−
−
−
−
−
−
−
10
10
TYP.
−
−
−
−
−
−
−
−
−
−
−
18
20
MAX.
−
−
1.5
1.5
1.4
1.4
3
2.5
1
2
10
35
35
UNIT
V
V
V
V
V
V
A
A
mA
mA
mA
V
CEsat
I
C
= 3 A; I
B
= 600 mA
I
C
= 2.5 A; I
B
= 500 mA
I
C
= 3 A; I
B
= 600 mA
I
C
= 2.5 A; I
B
= 500 mA
V
CE
= 1.5 V
V
BEsat
I
Csat
I
CES
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 5 mA; see Fig.7
V
CE
= 5 V; I
C
= 0.5 A; see Fig.7
Switching times resistive load
(Figs 8 and 9)
t
on
turn-on time
BUW11F
BUW11AF
storage time
BUW11F
BUW11AF
fall time
BUW11F
BUW11AF
storage time
BUW11F
BUW11AF
t
f
fall time
BUW11F
BUW11AF
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14
4
I
Con
= 3 A; I
Bon
=
−I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
−I
Boff
= 500 mA
I
Con
= 3 A; I
Bon
=
−I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
−I
Boff
= 500 mA
I
Con
= 3 A; I
Bon
=
−I
Boff
= 600 mA
I
Con
= 2.5 A; I
Bon
=
−I
Boff
= 500 mA
−
−
−
−
−
−
−
−
−
−
−
−
1
1
4
4
0.8
0.8
µs
µs
µs
µs
µs
µs
t
s
t
f
Switching times inductive load
(Figs 10 and 11)
t
s
I
Con
= 3 A; I
B
= 600 mA;
V
CL
= 250 V; T
c
= 100
°C
I
Con
= 2.5 A; I
B
= 500 mA;
V
CL
= 300 V; T
c
= 100
°C
I
Con
= 3 A; I
B
= 600 mA;
V
CL
= 250 V; T
c
= 100
°C
I
Con
= 2.5 A; I
B
= 500 mA;
V
CL
= 300 V; T
c
= 100
°C
−
−
2
2
2.5
2.5
µs
µs
−
−
200
200
300
300
ns
ns
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW11F; BUW11AF
handbook, full pagewidth
10
2
IC
(A)
ICM max
IC max
MGB930
10
II
1
10
−1
I
10
−2
10
−3
BUW11F
BUW11AF
10
−4
1
10
10
2
10
3
VCE (V)
10
4
Mounted
without
heatsink compound and 30
±5
N force on centre of package.
T
mb
< 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 14
5
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