BUK7213-75B
TrenchMOS™ standard level FET
M3D300
Rev. 01 — 10 December 2002
Objective data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology, featuring very
low on-state resistance.
Product availability:
BUK7213-75B in SOT428 (D-PAK)
1.2 Features
s
TrenchMOS
TM
technology
s
175
°C
rated
s
Q101 compliant
s
Standard level compatible
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V, 24 V, and 42 V loads
s
General purpose power switching
1.4 Quick reference data
s
E
DS(AL)S
≤
126 mJ
s
I
D
≤
74 A
s
R
DSon
= 11.7 mΩ (typ)
s
P
tot
≤
150 W
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning - SOT428 (D-PAK), simplified outline and symbol
Simplified outline
[1]
mb
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
d
g
s
MBB076
2
1
Top view
3
MBK091
SOT428 (D-PAK)
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
Philips Semiconductors
BUK7213-75B
TrenchMOS™ standard level FET
3. Limiting values
Table 2:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
I
D
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
mb
= 25
°C;
V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°C;
V
GS
= 10 V;
Figure 2
I
DM
P
tot
T
stg
T
j
I
DR
I
DRM
E
DS(AL)S
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive avalanche energy
T
mb
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs
unclamped inductive load; I
D
= 74 A;
V
DS
≤
75 V; V
GS
= 10 V;
R
GS
= 50
Ω;
starting T
j
= 25
°C
T
mb
= 25
°C;
pulsed; t
p
≤
10
µs;
Figure 3
T
mb
= 25
°C;
Figure 1
R
GS
= 20 kΩ
Conditions
Min
-
-
-
-
-
-
-
−55
−55
-
-
-
Max
75
75
±20
74
52
296
150
+175
+175
74
296
126
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
Source-drain diode
Avalanche ruggedness
9397 750 10799
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Objective data
Rev. 01 — 10 December 2002
2 of 12
Philips Semiconductors
BUK7213-75B
TrenchMOS™ standard level FET
120
Pder
(%)
80
03na19
80
ID
(A)
60
03nl22
40
40
20
0
0
50
100
150
200
Tmb
(°C)
0
0
50
100
150
Tmb (
°
C)
200
P
tot
P
der
=
----------------------
×
100%
-
P
°
tot
(
25 C
)
V
GS
≥
10 V
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
03nl20
limit RDSon = VDS/ID
102
tp = 10
µ
s
100
µ
s
10
DC
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
103
T
mb
= 25
°C;
I
DM
single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10799
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Objective data
Rev. 01 — 10 December 2002
3 of 12
Philips Semiconductors
BUK7213-75B
TrenchMOS™ standard level FET
4. Thermal characteristics
Table 3:
Symbol
R
th(j-a)
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
ambient
thermal resistance from junction to
mounting base
Figure 4
Conditions
Min
-
-
Typ
71.4
0.45
Max
-
1.0
Unit
K/W
K/W
4.1 Transient thermal impedance
1
δ
= 0.5
Zth(j-mb)
(K/W)
0.2
0.1
10-1
0.05
0.02
03nl34
10-2
single shot
P
δ
=
tp
T
tp
10-3
10-6
T
10-5
10-4
10-3
10-2
10-1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 10799
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Objective data
Rev. 01 — 10 December 2002
4 of 12
Philips Semiconductors
BUK7213-75B
TrenchMOS™ standard level FET
5. Characteristics
Table 4:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
Parameter
drain-source breakdown
voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
°C
T
j
=
−55 °C
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
°C
T
j
= 175
°C
T
j
=
−55 °C
I
DSS
drain-source leakage current
V
DS
= 75 V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 175
°C
I
GSS
R
DSon
gate-source leakage current
drain-source on-state
resistance
V
GS
=
±20
V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
°C
T
j
= 175
°C
Dynamic characteristics
Q
g(tot)
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
measured from drain to
centre of die
measured from source lead
to source bond pad
I
S
= 15 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A; dI
S
/dt =
−100
A/µs
V
GS
=
−10
V; V
DS
= 30 V
V
DS
= 25 V; R
L
= 1.2
Ω;
V
GS
= 10 V; R
G
= 10
Ω
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
V
GS
= 10V; V
DS
= 60 V;
I
D
= 25 A;
Figure 14
-
-
-
-
-
-
-
-
-
-
-
-
41
9
15
1959
326
159
18
114
52
45
2.5
7.5
-
-
-
2612
391
218
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
nS
nS
nS
nS
nH
nH
-
-
11.7
-
13
27
mΩ
mΩ
-
-
-
0.02
-
2
1
500
100
µA
µA
nA
2
1
-
3
-
-
4
-
4.4
V
V
V
75
70
-
-
-
-
V
V
Min
Typ
Max
Unit
Static characteristics
Source-drain diode
V
SD
t
rr
Q
r
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
-
-
-
0.85
74
94
1.2
-
-
V
ns
nC
9397 750 10799
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Objective data
Rev. 01 — 10 December 2002
5 of 12
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