Datasheet> 器件分类 > 分立半导体> 晶体管> BUK474-200A127

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BUK474-200A127: 产品描述TRANSISTOR 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power; 产品类别分立半导体晶体管; 文件大小238KB，共5页; 制造商NXP(恩智浦); 官网地址https://www.nxp.com

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BUK474-200A127概述

TRANSISTOR 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power

BUK474-200A127规格参数

参数名称	属性值
厂商名称	NXP(恩智浦)
零件包装代码	SFM
包装说明	FLANGE MOUNT, R-PSFM-T3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
雪崩能效等级（Eas）	50 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V
最大漏极电流 (ID)	5.3 A
最大漏源导通电阻	0.4 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	21 A
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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BUK474-200A127相似产品对比

	BUK474-200A127	BUK474-200A,127	BUK474-200B	BUK474-200B,127	BUK474-200B127
描述	TRANSISTOR 5.3 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power	5.3A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	TRANSISTOR 4.7 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, PLASTIC, FULL PACK-3, FET General Purpose Power	4.7A, 200V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	TRANSISTOR 4.7 A, 200 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power
厂商名称	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
包装说明	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	50 mJ	50 mJ	50 mJ	50 mJ	50 mJ
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	200 V	200 V	200 V	200 V	200 V
最大漏极电流 (ID)	5.3 A	5.3 A	4.7 A	4.7 A	4.7 A
最大漏源导通电阻	0.4 Ω	0.4 Ω	0.5 Ω	0.5 Ω	0.5 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
元件数量	1	1	1	1	1
端子数量	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	21 A	21 A	19 A	19 A	19 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
零件包装代码	SFM	-	SFM	-	SFM
针数	3	-	3	-	3

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