DISCRETE SEMICONDUCTORS
DATA SHEET
BTA204W series B and C
Three quadrant triacs
high commutation
Product
specification
December 1998
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Passivated high commutation triacs in
a plastic envelope suitable for surface
mounting intended for use in circuits
where high static and dynamic dV/dt
and high dI/dt can occur. These
devices will commutate the full rated
rms current at the maximum rated
junction temperature without the aid of
a snubber.
BTA204W series B and C
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
MAX.
600B
600C
600
1
10
MAX. UNIT
800B
800C
800
1
10
BTA204W- 500B
BTA204W- 500C
Repetitive peak
500
off-state voltages
RMS on-state current
1
Non-repetitive peak on-state 10
current
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT223
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
4
SYMBOL
T2
main terminal 2
gate
main terminal 2
1
2
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
sp
≤
108 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 1.5 A;
I
G
= 0.2 A;
dI
G
/dt = 0.2 A/μs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
1
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
10
11
0.5
100
2
5
5
0.5
150
125
A
A
A
2
s
A/μs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/μs.
December 1998
1
Rev 1.000
NXP
Semiconductors
Product specification
Three quadrant triacs
high commutation
THERMAL RESISTANCES
SYMBOL
R
th j-sp
R
th j-a
PARAMETER
Thermal resistance
junction to solder point
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
pcb mounted; minimum footprint
pcb mounted; pad area as in fig:2
BTA204W series B and C
MIN.
-
-
-
TYP.
-
156
70
MAX.
15
-
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA204W-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 2 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
-
-
-
-
-
-
-
1.2
0.7
0.4
0.1
MIN.
TYP.
MAX.
...B
50
50
50
30
45
30
30
1.5
1.5
-
0.5
...C
35
35
35
20
30
20
20
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dI
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
CONDITIONS
BTA204W-
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 ˚C; I
T(RMS)
= 1 A;
dV
com
/dt = 20V/μs; gate open circuit
I
TM
= 12 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
MIN.
...B
1000
6
-
...C
1000
3
-
-
-
2
V/μs
A/ms
μs
TYP.
UNIT
2
Device does not trigger in the T2-, G+ quadrant.
December 1998
2
Rev 1.000
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
1.4
1.2
Ptot / W
BT134W
Tsp(max) / C
104
107
1.2
1
0.8
IT(RMS) / A
BT134W
108 C
= 180
1
1
0.8
0.6
0.4
0.2
0
120
90
60
30
110
113
0.6
116
119
122
125
1.2
0.4
0.2
0
-50
0
0.2
0.4
0.6
0.8
IT(RMS) / A
1
0
50
Tsp / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
BT134W
IT
T
100
dI
T
/dt limit
I TSM
time
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus solder point temperature T
sp
.
IT(RMS) / A
BT134W
1000
ITSM / A
2
1.5
Tj initial = 25 C max
1
T2- G+ quadrant
10
0.5
1
10us
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT134W
IT
T
8
6
4
2
0
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
sp
≤
108˚C.
VGT(Tj)
VGT(25 C)
12
10
1.6
1.4
1.2
1
0.8
0.6
BT136
Tj initial = 25 C max
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
December 1998
3
Rev 1.000
1;3
Semiconductors
Product specification
Three quadrant triacs
high commutation
BTA204W series B and C
3
2.5
2
1.5
1
IGT(Tj)
IGT(25 C)
BTA204
2
IT / A
Tj = 125 C
Tj = 25 C
BT134W
T2+ G+
T2+ G-
T2- G-
1.5
Vo = 1.0 V
Rs = 0.21 Ohms
typ
max
1
0.5
0.5
0
-50
0
0
50
Tj / C
100
150
0
0.5
1
VT / V
1.5
2
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3
2.5
2
1.5
1
0.5
TRIAC
100
Zth j-sp (K/W)
BT134W
10
unidirectional
1
bidirectional
P
D
tp
0.1
t
0
-50
0
50
Tj / C
100
150
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-sp
, versus
pulse width t
p
.
3
2.5
2
1.5
1
0.5
TRIAC
0
-50
0
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
December 1998
4
Rev 1.000
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