BT139X-800
4Q Triac
24 October 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT186A "full pack" plastic package intended
for use in applications requiring high bidirectional transient and blocking voltage
capability and high thermal cycling performance. Typical applications include motor
control, industrial and domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
High noise immunity
Isolated package
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
h
≤ 38 °C;
Fig. 1; Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
10
35
mA
-
8
35
mA
-
5
35
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
155
16
Unit
V
A
A
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TO
-2
20F
NXP Semiconductors
BT139X-800
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
22
Max
70
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT139X-800
BT139X-800/L02
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
7. Marking
Table 4.
Marking codes
Marking code
BT139X-800
Type number
BT139X-800
BT139X-800/L02
BT139X-800
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
24 October 2013
2 / 13
NXP Semiconductors
BT139X-800
4Q Triac
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 38 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
800
16
155
170
120
50
50
50
10
2
5
0.5
150
125
Unit
V
A
A
A
2
I2t for fusing
rate of rise of on-state current
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
W
W
°C
°C
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT139X-800
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© NXP N.V. 2013. All rights reserved
Product data sheet
24 October 2013
3 / 13
NXP Semiconductors
BT139X-800
4Q Triac
50
I
T(RMS)
(A)
40
aaa-009683
20
I
T(RMS)
(A)
15
38 °C
001aab095
30
10
20
10
5
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
h
(°C)
150
f = 50 Hz; T
h
= 38 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
25
P
tot
(W)
20
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
Fig. 2.
RMS on-state current as a function of heatsink
temperature; maximum values
001aab096
25
T
h(max)
(°C)
45
α = 180
°
120
°
90
°
60
°
30
°
15
65
10
85
5
105
0
0
5
10
15
I
T(RMS)
(A)
125
20
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT139X-800
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© NXP N.V. 2013. All rights reserved
Product data sheet
24 October 2013
4 / 13
NXP Semiconductors
BT139X-800
4Q Triac
10
3
001aab092
I
TSM
(A)
10
2
(1)
I
T
(2)
I
TSM
t
t
p
10
10
-2
T
j(init)
= 25 °C max
10
-1
1
10
T
p
(ms)
10
2
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
160
I
TSM
(A)
120
001aab102
80
I
T
40
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
0
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT139X-800
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
24 October 2013
5 / 13
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