BT137S-800G
4Q Triac
2 September 2013
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic
package intended for use in general purpose bidirectional switching and phase control
applications.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
11
50
mA
-
8
50
mA
-
5
50
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
65
8
Unit
V
A
A
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NXP Semiconductors
BT137S-800G
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
Typ
30
Max
100
Unit
mA
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
2
1
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
DPAK (SOT428)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT137S-800G
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
Type number
BT137S-800G
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
2 September 2013
2 / 14
NXP Semiconductors
BT137S-800G
4Q Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 102 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
-
Max
800
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
2
t
p
= 10 ms; SIN
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G+
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2+ G-
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G-
I
T
= 12 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs;
T2- G+
A s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
-
-40
-
BT137S-800G
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
2 September 2013
3 / 14
NXP Semiconductors
BT137S-800G
4Q Triac
10
I
T(RMS)
(A)
8
003aae689
25
I
T(RMS)
(A)
20
003aae692
6
15
4
10
2
5
0
- 50
0
50
100
T
mb
(°C)
150
0
10- 2
10- 1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
Fig. 2.
12
f = 50 Hz
T
mb
≤ 102 °C
RMS on-state current as a function of surge
duration; maximum values
003aae690
P
tot
(W)
8
conduction
form
angle
factor
(degrees)
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
α = 180°
120°
α
90°
60°
30°
4
0
0
2
4
6
8
I
T(RMS)
(A)
10
α = conduction angle
a = form factor = I
T(RMS)
/I
T(AV)
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BT137S-800G
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
2 September 2013
4 / 14
NXP Semiconductors
BT137S-800G
4Q Triac
10
3
I
TSM
(A)
003aae691
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
(2)
10
10
- 5
10
- 4
10
- 3
10
- 2
t
p
(s)
10
- 1
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
80
I
TSM
(A)
60
003aae693
40
I
T
20
I
TSM
t
1/f
T
j(init)
= 25 °C max
0
1
10
10
2
10
3
number of cycles
10
4
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT137S-800G
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
2 September 2013
5 / 14
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