AH322
2W High Linearity InGaP HBT Amplifier
Product Features
•
400 – 2700 MHz
•
+33 dBm P1dB
•
+50 dBm Output IP3
•
13.4 dB Gain @ 2140 MHz
•
500 mA Quiescent Current
•
+5 V Single Supply
•
MTTF > 100 Years
•
Lead-free/RoHS-compliant
SOIC-8 Package
Product Description
The AH322 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance for various narrowband-
tuned application circuits with up to +50 OIP3 and +33
dBm of compressed 1dB power. It is housed in a lead-
free/RoHS-compliant SOIC-8 package. All devices are 100%
RF and DC tested.
The AH322 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. The AH322 is ideal for the final stage of
small repeaters or as driver stages for high power
amplifiers. In addition, the amplifier can be used for a wide
variety of other applications within the 400 to 2700 MHz
frequency band.
Functional Diagram
1
8
2
3
7
6
4
5
Applications
•
•
•
•
Final stage amplifiers for Repeaters
High Power Amplifiers
Mobile Infrastructure
LTE / WCDMA / EDGE / CDMA
Function
Iref
Input
Output / Vcc
Vbias
GND
GND
Pin No.
8
3
6, 7
1
Backside Paddle
2, 4, 5
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
WCDMA Channel Power
(3)
@ -50 dBc ACLR
Typical Performance
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
400
2140
13.4
14.7
7.8
+33
+50
+24.1
4.8
+5
500
30
Typ
Max
2700
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
WCDMA Channel Power
(3)
@ -50 dBc ACLR
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
V
mA
mA
940
19.4
18
8.5
+23.6
+33.0
+47.6
8.5
Typical
1960
14.1
11.3
11.8
+24.4
+33.3
+50.2
4.5
+5
30
500
2140
13.4
14.7
7.8
+24.1
+33
+50
4.8
Noise Figure
Vcc, Vbias
Quiescent Collector Current
(4)
Iref
Output P1dB
Output IP3
(2)
Noise Figure
Vcc, Vbias
Iref
Quiescent Collector Current
600
500
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +21 dBm / tone separated by 1 MHz, 940
MHz. OIP3 measured with two tones at an output power of +24 dBm / tone separated by 1 MHz,
1960 MHz and 2140 MHz respectively. The suppression on the largest IM3 product is used to
calculate the OIP3 using a 2:1 rule.
3. 3GPP WCDMA, TM1+64DPCH, ±5 MHz Offset, no clipping, PAR = 10.2 dB @ 0.01%
Probability.
4. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6 and 7.
Absolute Maximum Rating
Parameter
Storage Temperature
RF Input Power, CW, 50 , T = 25ºC
Device Voltage, Vcc, Vbias
Device Current
Device Power
Thermal Resistance, Rth
Junction Temperature, Tj
Rating
-65 to +150
°C
Input P
10
dB
+8 V
1400 mA
8W
18.6
°C
/ W
+200
°C
Ordering Information
Part No.
AH322-S8G
AH322-S8PCB900
AH322-S8PCB1960
AH322-S8PCB2140
Description
2W High Linearity InGaP HBT Amplifier
(lead-free/RoHS-compliant SOIC-8 Pkg)
920 - 960 MHz Evaluation Board
1930 - 1990 MHz Evaluation Board
2110 - 2170 MHz Evaluation Board
.
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 1000 pieces on a 7” reel.
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Typical Device Data
S-Parameters (Vcc = +5 V, I
cq
= 500 mA, T = 25
°C,
calibrated to device leads)
1.0
1.0
6
0.
0.
6
45
0.
4
0. 8
0 .8
Gain and Maximum Stable Gain
40
35
30
25
20
15
10
5
0
-5
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
2.14 GHz
7.19 dB
2.14 GHz
22.7 dB
0
S11
Swp Max
4GHz
2.
0
S22
Swp Max
4GHz
2.
0
0
3.
10 .0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
.
-0
4
.0
-2
-0
.4
-0
-0
.6
.6
- 0. 8
-0 .8
.
-2
0
Swp Min
0.01GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in pink color, [DB (S (2, 1)]. For a tuned circuit for a
particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in
the blue line [DB (GMAX)].
The impedance plots are shown from 0.01 – 4 GHz, with markers placed in 0.5 GHz increments.
S-Parameters (V
cc
= +5 V, I
cq
= 500 mA, T = 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
50
-0.74
-174.58
29.75
109.51
-43.47
25.51
100
-0.53
-179.31
24.21
98.59
-43.22
17.83
200
-0.45
176.71
18.46
89.55
-42.49
8.135
400
-0.44
170.07
12.77
80.82
-42.04
5.31
600
-0.56
163.11
9.78
73.71
-41.41
10.52
700
-0.61
159.9
8.73
69.49
-41.21
11.31
800
-0.64
156.03
7.94
65.68
-40.26
12.5
1000
-0.78
147.66
6.8
56.95
-39.65
7.88
1200
-0.87
138.49
6.11
46.99
-38.34
2.45
1400
-1.08
128.32
5.8
36.79
-37.99
-3.1
1600
-1.4
117.39
5.83
25.05
-37.52
-14.57
1800
-1.94
106.19
6.17
10.83
-37.39
-27.07
2000
-3.2
95.9
6.8
-7.89
-37.45
-42.22
2200
-5.84
94.01
7.36
-33.75
-38.56
-69.38
2400
-6.52
112.96
6.5
-64.88
-41.93
-115.31
2600
-4.45
121.06
4.77
-92.83
-41.83
167.17
2800
-2.44
117.78
2.24
-121.06
-38.13
103.07
3000
-1.26
108.49
-1.12
-142.85
-34.99
62.15
S22 (dB)
-1.15
-1.22
-1.19
-1.22
-1.18
-1.12
-1.17
-1.22
-1.26
-1.33
-1.49
-1.46
-1.41
-1.21
-0.9
-0.4
-0.27
-0.35
-1.0
-1.0
S22 (ang)
-135.3
-157.31
-170.3
-178.39
176.07
173.93
171.69
166.82
162.15
157.29
152.31
147.31
143.05
138.4
133.24
126.56
119.41
112.36
Application Circuit PC Board Layout
Circuit Board Material: Top RF layer is .014” Getek,
є
r
= 4.0, 4 total layers (0.062” thick) for mechanical rigidity
1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
shunt capacitors – C8, C5 and C2. The markers and vias are spaced in .050” increments.
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
-4
.0
-5
.0
-3
.
0
-4
.0
-5 .
0
2
-0 .
.2
-0
Swp Min
0.01GHz
-10.0
0. 2
2.14 GHz
r 0.493722
x 0.825153
4
.0
0
5.
0.
4
-1 0.0
-3
.0
DB(MSG())
De_emebedded S_parameter
DB(|S(2,1)|)
De_emebedded S_parameter
3.
0
0
4.
2.14 GHz
r 0.0838672
x 0.36526
5. 0
0.
2
10 .0
.
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
824 - 894 MHz Application Circuit
Typical RF Performance at 25
°
C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power
(1)
(@-55 dBc IS-95 CDMA ACPR)
units
dB
dB
dB
dBm
dBm
dBm
dBm
mA
V
V
824
19.7
16
7
+33.0
+24.4
+23.7
+46.2
848
19.7
16
8
+33
+24.4
+23.7
+46.3
600
+5
+5
894
19.7
13
12
+32.6
+23.8
+23
+45.1
Channel Power
Output IP3
(3)
(2)
(@ -50 dBc WCDMA ACLR)
(21 dBm / tone, 1MHz spacing)
Quiescent Current, Icq
Vpd
(4)
Vcc
Notes:
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±750 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off
).
5. The edge of L2 is placed at 265 mils from edge of AH322 RFout pin (12 º @ 850 MHz).
6. The edge of C2 is placed at 250 mils from edge of AH322 RFout pin (11 º @ 850 MHz).
7. The edge of C8 is placed at 25 mils from edge of AH322 RFout pin (1 º @ 850 MHz).
8. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
9. Zero ohm jumpers may be replaced with copper traces in the target application layout.
10. DNP implies Do Not Place.
C8
L2
C5
Small Signal Performance
20
19
G ain (d B)
18
17
16
15
800
0
-5
Re tu rn L o ss (d B )
-10
-15
-20
-25
900
ACLR (dBc)
-30
-35
ACLR vs. Output Power
3GPP WCDMA, TM1+64DPCH, ±5MHz offset Freq., PAR = 10.34 % @ Prob.
824 MHz
848 MHz
894 MHz
-40
-45
-50
-55
-60
20
21
22
23
24
Output Power (dBm)
25
26
Gain
S11
S22
820
840
860
Frequency (MHz)
880
ACPR vs. Output Power
IS-95 CDMA, 9 CH. Fwd., ±750 KHz offset frequency, PAR = 9.7 dB @ 0.01 % Prob
.
OIP3 vs. Output Power
1MHz spacing, 25C
-40
-45
ACPR (dBc)
-50
-55
-60
-65
-70
20
21
22
23
24
Output Power (dBm)
25
26
824 MHz
848 MHz
894 MHz
50
47
OIP3 (dBm )
44
41
824 MHz
848 MHz
894 MHz
38
35
18
19
20
21
22
23
24
Output Power / tone (dBm)
25
26
.
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
920 - 960 MHz Application Circuit (AH322-S8PCB900)
Typical RF Performance at 25
°
C
Frequency (MHz)
Gain
Input Return Loss
Output Return Loss
Output P1dB
Channel Power
(1)
(@-55 dBc IS-95 CDMA ACPR)
units
dB
dB
dB
dBm
dBm
dBm
dBm
dB
mA
V
V
920
19.2
16.6
7.8
+33
+24.3
+23.5
+47.3
8.2
940
19.4
18
8.5
+33
+24.4
+23.6
+47.6
8.5
600
+5
+5
960
19.2
15.3
9.4
+33
+24.3
+23.5
+47.2
9
Channel Power
Output IP3
(3)
(2)
(@ -50 dBc WCDMA ACLR)
(21 dBm / tone, 1MHz spacing)
Noise Figure
Quiescent Current, Icq
Vpd
(4)
Vcc
Notes:
1. ACPR test set-up: IS-95 CDMA, 9 channels fwd, ±885 KHz offset, 30 KHz, Meas BW, PAR = 9.7 dB
@ 0.01% Prob.
2. ACLR test set-up: 3GPP WCDMA, TM1±64 DPCH, ±5MHz offset no clipping, PAR = 10.34 dB @
0.01% Probability.
3. OIP3 is measured at 21 dBm / tone output power with 1 MHz spacing.
4. Vpd is used as device power down voltage (low = RF off).
5. The edge of L2 is placed at 380 mils from the edge of AH322 RFout pin (19 º @ 940 MHz)
6. The edge of C2 is placed at 190 mils from the edge of AH322 RFout pin (9.5 º @ 940 MHz).
7. Do not exceed +5.5V supply or TVS diode D3 will be damaged.
8. 0 jumpers may be replaced with copper traces in the target application layout.
9. DNP implies Do Not Place.
Small Signal Performance
25 C
C8
L2
C5
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 940 MHz
ACLR vs. Channel Power
3GPP WCDMA, TM1±64DPCH, ±5MHz Offset, 25C
20
19
G ain (d B )
18
S21
S11
S22
0
-5
R etu rn L o ss (dB )
-10
-15
-20
-25
960
-30
-35
ACLR (dB m )
-40
-45
-50
-55
-60
17
18
19 20 21 22 23 24 25
Output Channel Power (dBm)
26
27
+25C
-40C
+85C
-30
-35
ACLR (dBc)
-40
-45
-50
-55
-60
17
18 19 20 21 22 23 24 25
Output Channel Power (dBm)
26 27
920 MHz
940 MHz
960 MHz
17
16
15
920
930
940
Frequency (MHz)
950
ACPR vs. Channel Power
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 940 MHz
ACPR vs. Channel Power
IS-95CDMA, 9 Ch. Fwd, ±885 KHz Offset, 30 KHz Meas BW, 25C
Gain vs. Pout vs. Temp
Freq. = 940 MHz
-40
-45
-50
ACPR (dBc)
-55
-60
-65
-70
-75
-80
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
+25C
-40C
+85C
-40
-45
-50
ACPR (dBc)
-55
-60
-65
-70
-75
-80
17 18 19 20 21 22 23 24 25 26 27
Output Channel Power (dBm)
920 MHz
940 MHz
960 MHz
21
20
G a in (d B )
19
18
17
25C
-40C
+85C
16
15
27
28
29
30
31
Pout (dBm)
32
33
34
.
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
April 2009
AH322
2W High Linearity InGaP HBT Amplifier
Performance Plots for AH322-S8PCB900 contd.
OIP3 vs. Channel Power
Freq. = 940, 941 MHz, 1MHz spacing
OIP3 vs. Channel Power
1 MHz spacing, 25 C
Noise Figure vs. Frequency
25C
55
55
10
8
6
4
2
OIP3 (dbm )
OIP3 (dB m )
50
50
N F (d B)
920 MHz
940 MHz
960 MHz
45
25C
-40C
85C
45
40
40
35
16
17
18
19
20
21
Output Power / Tone (dBm)
22
23
35
16
17
18
19
20
21
22
Output Power / Tone (dBm)
23
0
920
930
940
Frequency (MHz)
950
960
.
TriQuint Semiconductor, Inc
•
Phone 1-800-951-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
April 2009
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