The AH420 is a high dynamic range amplifier in a low-cost
surface mount package. The InGaP/GaAs HBT is able to
achieve high performance with -49 dBc ACLR and +35.7
dBm of compressed 1dB power, operating off of a single
+5V supply. It is housed in a lead-free/green/RoHS-
compliant 4x5mm DFN package. All devices are 100% RF
and DC tested.
Functional Diagram
•
-49 dBc ACLR @ 26 dBm
•
14 dB Gain @ 2140 MHz
•
800 mA Quiescent Current
•
+5 V Single Supply
The AH420 is targeted for use as a final stage amplifier in
•
MTTF > 100 Years
wireless infrastructure repeaters or as driver stages for high
•
Lead-free/green/RoHS-compliant
power amplifiers where high performance is required. In
addition, the amplifier can be used for a wide variety of
12-pin 4x5mm DFN Package
other applications within the 400 to 2700 MHz frequency
band. By operating off of a single +5V rail, other higher
voltage rails are not necessarily needed thus saving system
Applications
costs. The amplifier also has the flexibility to operate at
•
Final stage amplifiers for Repeaters
higher voltage levels to achieve higher compression if
needed by the system.
Function
RF
IN
RF
OUT
I
REF
V
BIAS
NC
Pin No.
3,4,5,6
7,8,9,10
12
1
2,11
•
High Power Amplifiers
•
Mobile Infrastructure
•
LTE / WCDMA / EDGE / CDMA
Specifications
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Gain
Input Return Loss
Output Return Loss
ACPR
(2)
Output P1dB
Output IP3
(4)
Quiescent Collector Current
(3)
Iref
Vcc, Vbias
Typical Performance
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBm
dBm
mA
mA
V
400
2140
+26
14
12
7.4
-49
+35.7
+50
800
20
+5
Typ
Max
2700
Parameter
Frequency
Channel Power
Gain
Input Return Loss
Output Return Loss
ACPR
(2)
Output P1dB
Noise Figure
Output IP3
(4)
Quiescent Collector Current
(3)
Iref
Vcc, Vbias
Units
MHz
dBm
dB
dB
dB
dBc
dBm
dB
dBm
mA
mA
V
940
+27
16
14
6.4
-46.5
+35.2
6.6
+50
Typical
1960
+27
14.1
19
7
-48
+35.6
5.3
+49
800
20
+5
2140
+26
14
12
7.4
-49
+35.7
5.6
+50
13
16
710
900
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
3. This corresponds to the quiescent current under small-signal conditions into pins 6, 7, and 8 when
the current setting resistor, R4 connected to the Iref pin, is at 82
Ω.
4. OIP3 is measured with two tones at out an output power of +27 dBm/tone separated by 1 MHz.
The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The amplifier has been tested for ruggedness to be capable of handling:
10:1 VSWR @ 5Vcc, 2140MHz, +35.2dBm CW Pout, 25 °C
10:1 VSWR @ 5Vcc, 940MHz, +28.5dBm IS-95A Pout, 25 °C
10:1 VSWR @ 5Vcc, 2140MHz, +26.5dBm WCDMA Pout, 25 °C
Absolute Maximum Ratings
Parameter
Storage Temperature
Vcc, Vbias
RF Input Power, CW, 50
Ω,
T=25°C
Reference Current, Iref
Dissipated Power, Pmax
Max Junction Temperature, T
J
For 10
6
hours MTTF
-65 to +150
°C
+14 V
Input P9dB
170 mA
7W
158
°C
10.6
°C
/ W
Rating
Ordering Information
Part No.
AH420-EG
AH420-EPCB900
AH420-EPCB1960
AH420-EPCB2140
Description
4W High Linearity InGaP HBT Amplifier
920-960 MHz Evaluation Board
1930-1990 MHz Evaluation Board
2110-2170 MHz Evaluation Board
Thermal Resistance,
Θ
JC
Operation of this device above any of these parameters may cause permanent damage.
Standard T/R size = 500 pieces on a 7” reel.
Specifications and information are subject to change without notice.
Page 1 of 8 Aug 2009
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
AH420
4W High Linearity InGaP HBT Amplifier
Application Circuit PC Board Layout
GND
GND
V
pd
V
cc
Baseplate Configuration
Circuit Board Material: 0.014” GETEK, single layer, 1 oz copper,
ε
r
= 4.2,
Microstrip line details: width = .030”, marker spacing = .050”
Notes:
1.
Please note that for reliable operation, the evaluation board will have to be mounted to a
much larger heat sink during operation and in laboratory environments to dissipate the
power consumed by the device. The use of a convection fan is also recommended in
laboratory environments.
2.
The area around the module underneath the PCB should not contain any soldermask in
order to maintain good RF grounding.
Specifications and information are subject to change without notice.
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 2 of 8 Aug 2009
AH420
60
4W High Linearity InGaP HBT Amplifier
S-Parameters (V
CC
= +5 V, I
CC
= 800 mA, 25
°C,
unmatched 50 ohm system)
1.0
Typical Device Data
0.8
6
0.
0
6
0.
Swp Max
6GHz
2.
1.0
0.8
Gain / Maximum Stable Gain
S(1,1)
AH420_EG
S11
S(2,2)
AH420_EG
S22
Swp Max
6GHz
2.
0
40
0.2
0
3.
0
4.
5.0
0.2
Gain (dB)
20
10.0
10.0
10.0
0
-10.0
-10.0
-40
0
2
Frequency (GHz)
4
6
-0
.4
-0
.4
.0
-2
-0
.6
-0.8
-0
.6
Swp Min
0.01GHz
-0.8
-2
.0
Swp Min
0.01GHz
-1.0
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.
S-Parameters (V
CC
= +5 V, I
CQ
= 800 mA, 25
°C,
unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (deg)
S21 (dB)
S21 (deg)
S12 (dB)
S12 (deg)
S22 (dB)
S22 (deg)
10
50
100
300
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
3700
3900
4100
4300
-1.22
-0.44
-0.31
-0.28
-0.30
-0.40
-0.43
-0.50
-0.59
-0.74
-0.98
-1.40
-2.04
-2.78
-2.88
-2.04
-1.32
-0.95
-0.78
-0.69
-0.63
-0.61
-0.58
-0.54
-176.79
-177.23
-178.77
179.40
178.17
176.72
175.77
173.96
171.86
169.75
167.20
164.19
161.94
163.47
169.61
171.93
169.73
167.05
164.66
162.98
161.89
161.39
161.33
161.51
29.97
24.42
19.17
10.27
6.16
3.74
2.09
0.99
0.42
0.16
0.25
0.63
1.22
1.53
0.74
-1.59
-4.55
-7.58
-10.52
-13.08
-15.60
-17.79
-19.66
-21.87
155.67
117.15
103.73
90.61
84.91
79.16
74.69
69.01
62.55
55.48
46.05
34.50
18.13
-4.61
-32.66
-58.88
-77.51
-90.68
-100.04
-106.66
-112.19
-116.53
-121.50
-124.38
-52.77
-45.04
-44.01
-43.22
-43.10
-43.48
-41.72
-41.21
-40.35
-39.33
-38.86
-38.13
-36.71
-35.70
-36.03
-37.72
-39.74
-41.31
-42.50
-43.74
-42.73
-43.74
-43.35
-42.62
64.11
32.25
11.29
5.32
-0.42
36.07
5.11
-1.08
-4.63
-10.41
-20.47
-34.84
-51.74
-78.76
-114.19
-145.67
-179.01
163.85
141.73
129.82
112.53
105.15
107.61
97.03
-1.61
-1.05
-1.16
-0.94
-0.93
-1.02
-1.07
-1.11
-1.15
-1.21
-1.24
-1.24
-1.19
-0.95
-0.62
-0.52
-0.55
-0.68
-0.80
-0.87
-0.90
-0.92
-0.92
-0.97
-1.0
-39.70
-122.90
-150.31
-169.59
-174.28
-177.33
-177.23
-178.10
-178.55
-179.14
-179.88
179.85
179.15
178.06
175.59
171.28
168.08
165.55
164.25
162.92
162.24
161.57
161.67
162.11
Device S-parameters are available for download off of the website at: http://www.tqs.com
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 3 of 8 Aug 2009
-4
.0
-3
.0
-4
.0
DB(GMax())
AH420_EG
DB(|S(2,1)|)
AH420_EG
.0
-5.
0
-5.
0
-20
2
-0.
2
-0.
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0.
4
-3
0.
4
0
3.
0
4.
5.0
AH420
Frequency (MHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACPR
P1dB
Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
920-960 MHz Reference Design (AH420-EPCB900)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
920
940 960 Units
+27 +27 +27 dBm
15.9
16
16.1
dB
17
14
11
dB
5.3
6.4
8.0
dB
-47 -46.5 -46.5 dBc
+35.2 +35.2 +35.2 dBm
+51
6.5
+50
6.6
800
+5
C7
C8
+49
6.7
dBm
dB
mA
V
Noise Figure
Quiescent Current, Icq
Vpd, Vcc
D1
FB1
C22
R3
C3
C5
C4
C6
C2
C1
R1
C14
C17
C13
C15
C12
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3.
Components shown on the silkscreen but not on the schematic are not used.
4.
Vpd used for device power down (low=RF off)
5.
The edge of C13 is placed at 75mil from AH420 RFout pin. (3.9
o
@ 940 MHz)
6.
The edge of C15 is placed 145mil from the edge of C13. (7.5
o
@ 940 MHz)
7.
The edge of C14 is placed at 150mil from AH420 Rfin pin. (7.7
o
@ 940 MHz)
8.
The edge of C17 is placed against the edge of C14.
9.
0
Ω
jumpers can be replaced with copper trace in target application.
Return Loss
0
-5
T=25°C
Gain vs. Frequency
18
T=25°C
R2
R4
L1
OIP3 vs. Output Power/Tone vs. Temperature
f=940 MHz
55
17
50
OIP3 (dBm)
S11, S22 (dB)
Gain (dB)
-10
-15
-20
16
45
15
40
S11
S22
+25°C
-40°C
+85°C
14
0.90
0.92
0.94
0.96
0.98
-25
0.90
35
0.92
0.94
Frequency (GHz)
T=25°C
0.96
0.98
20
22
Frequency (GHz)
ACPR vs. Output Average Power vs. Frequency
T=25°C
24
26
Output Power (dBm)
28
30
OIP3 vs. Output Power/Tone vs. Frequency
52
P1dB vs. Frequency vs. Temperature
37
-35
-40
ACPR (dBc)
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2 dB @ 0.01% Probability
3.84 MHz BW
OIP3 (dBm)
50
36
48
-50
-55
-60
920 MHz
940 MHz
960 MHz
P1dB (dBm)
-45
35
46
34
44
920 MHz
42
940 MHz
960 MHz
29
30
+25°C
33
920
930
-40°C
940
Frequency (MHz)
T=25°C
+85°C
950
960
-65
15
16
17
18
19
20
21
22
Output Power (dBm)
T=25°C
23
24
25
24
25
26
27
28
Output Power (dBm)
Current vs Output Average Power vs. Frequency
1100
Collector Current (mA)
8
Noise Figure vs. Frequency
T=25°C
Efficiency vs Output Average Power vs. Frequency
20
Collector Efficiency (%)
1050
1000
950
900
920 MHz
850
24
25
26
27
28
Output Power (dBm)
29
30
940 MHz
960 MHz
7
15
NF (dB)
6
10
5
5
920 MHz
940 MHz
960 MHz
29
30
4
0.90
0
0.92
0.94
0.96
0.98
24
25
Frequency (GHz)
26
27
28
Output Power (dBm)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc
•
Phone 1-503-615-9000
•
FAX: 503-615-8900
•
e-mail: info-sales@tqs.com
•
Web site: www.TriQuint.com
Page 4 of 8 Aug 2009
AH420
Frequency (MHz)
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
P1dB
Output IP3
At 27dBm/tone, 1MHz spacing
4W High Linearity InGaP HBT Amplifier
1930-1990 MHz Reference Design (AH420-EPCB1960)
W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 10.2 dB @ 0.01% Probability, 3.84 MHz BW
Typical W-CDMA Performance at 25°C
1930 1960 1990
+27 +27 +27
13.4 14.1 14.1
13
19
11
4.7
7
12
-49
-48
-47
+35.6 +35.6 +35.6
+49
5.6
+49
5.3
800
+5
C7
C8
U
nits
dBm
dB
dB
dB
dBc
dBm
dBm
dB
mA
V
+49
5.3
Noise Figure
Quiescent Current, Icq
Vpd, Vcc
D1
C3
C5
C9
C10
C11
C4
C6
C2
C1
R1
C14
C13
C15
C12
C17
C16
Notes:
1.
The primary RF microstrip line is 50
Ω.
2.
Do not exceed 5.5V on Vpd and Vcc or damage will occur to D1.
3.
Components shown on the silkscreen but not on the schematic are not used.
4.
Vpd used for device power down (low=RF off)
5.
The edge of C13 is placed at 75mil from AH420 RFout pin. (8.0
o
@ 1960 MHz)
6.
The edge of C15 is placed 50mil from the edge of C13. (5.3
o
@ 1960 MHz)
7.
The edge of C16 is placed 345mil from the edge of C15. (37
o
@ 1960 MHz)
8.
The edge of C14 is placed at 160mil from AH420 Rfin pin. (17.2
o
@ 1960 MHz)
9.
The edge of C17 is placed 95mil from the edge of C14. (10.2
o
@ 1960 MHz)
10. 0
Ω
jumpers can be replaced with copper trace in target application.
FB1
R3
R2
Gain vs. Frequency
15
14
T=25°C
S11, S22 (dB)
ACLR (dBc)
R4
L1
Return Loss
0
-5
-10
-15
-20
T=25°C
ACLR vs. Output Average Power vs. Frequency
-35
-40
-45
-50
-55
S11
S22
-60
2.00
T=25°C
Gain (dB)
13
12
11
10
1.92
1930 MHz
24
25
1960 MHz
1990 MHz
28
29
1.94
1.96
Frequency (GHz)
1.98
2.00
-25
1.92
1.94
1.96
Frequency (GHz)
1.98
26
27
Output Power (dBm)
Current vs Output Average Power vs. Frequency
1050
Collector Current (mA)
T=25°C
Noise Figure vs. Frequency
T=25°C
8
1000
950
900
850
1930 MHz
800
24
25
26
27
Output Power (dBm)
28
29
1960 MHz
1990 MHz
7
NF (dB)
6
5
4
1.90
1.92
1.94
1.96
1.98
2.00
Frequency (GHz)
Specifications and information are subject to change without notice
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