DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D423
BYD72 series
Ultra fast low-loss
controlled avalanche rectifiers
Preliminary specification
1998 Dec 03
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
MGL571
BYD72 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec™
(1)
technology. This package is
handbook, halfpage
k
a
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD72A
BYD72B
BYD72C
BYD72D
BYD72E
BYD72F
BYD72G
V
R
continuous reverse voltage
BYD72A
BYD72B
BYD72C
BYD72D
BYD72E
BYD72F
BYD72G
I
F(AV)
average forward current
BYD72A to D
BYD72E to G
I
FSM
T
stg
T
j
non-repetitive peak forward current
storage temperature
junction temperature
see Fig.7
T
amb
= 25
°C;
printed-circuit board
mounting, pitch 5 mm, see Fig.8;
averaged over any 20 ms period;
see Figs 2 and 3
t = 10 ms half sine wave;
T
j
= 25
°C;
V
R
= V
RRMmax
−
−
−
−
−
−
−
−
−
−
−65
−65
50
100
150
200
250
300
400
1.02
0.95
15
+175
+175
V
V
V
V
V
V
V
A
A
A
°C
°C
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
−
−
50
100
150
200
250
300
400
V
V
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYD72A to D
BYD72E to G
I
R
t
rr
reverse current
reverse recovery time
BYD72A to D
BYD72E to G
V
FRM
forward recovery voltage
BYD72A to D
BYD72E to G
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
when switched to I
F
= 1 A in 50 ns
V
R
= V
RRMmax
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.6
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.9
CONDITIONS
I
F
= 1 A; see Figs 4 and 5
BYD72 series
MAX.
0.98
1.05
1
100
25
50
1.55
3.40
V
V
UNIT
µA
µA
ns
ns
V
V
VALUE
150
UNIT
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer
≥40 µm,
pitch 5 mm; see Fig.8.
1998 Dec 03
3
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
GRAPHICAL DATA
MDA811
BYD72 series
handbook, halfpage
2
IF(AV)
handbook, halfpage
1
MDA812
(A)
1.6
IF(AV)
(A)
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0
0
40
80
120
160
200
Tamb (°C)
0
0
40
80
120
160
200
Tamb (°C)
BYD72A to D
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.8.
BYD72E to G
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.8.
Fig.2
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
10
IF
MDA820
handbook, halfpage
10
IF
MDA821
(A)
8
(A)
8
6
6
4
4
2
2
0
0
0.4
0.8
1.2
1.6
VF (V)
2
0
0
0.4
0.8
1.2
1.6
VF (V)
2
BYD72A to D
Dotted line: T
j
= 175
°C.
Solid line: T
j
= 25
°C.
BYD72E to G
Dotted line: T
j
= 175
°C.
Solid line: T
j
= 25
°C.
Fig.4
Forward current as a function of forward
voltage; typical values.
4
Fig.5
Forward current as a function of forward
voltage; typical values.
1998 Dec 03
Philips Semiconductors
Preliminary specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD72 series
handbook, halfpage
10
MDA825
200
handbook, halfpage
Tj
(°C)
160
MDA814
IR
(µA)
1
120
G
80
10
−1
40
10
−2
0
40
80
120
160
200
Tj (°C)
0
0
100
200
300
VR (V)
400
Fig.6
Reverse current as a function of junction
temperature; typical values.
Fig.7
Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
50
5
3
50
2
3
MBK812
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1998 Dec 03
5
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