MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF894/D
NPN Silicon
RF Power Transistor
. . . designed for 24 volt UHF large–signal, common–base amplifier applications
in industrial and commercial FM equipment operating in the range of
804 – 960 MHz.
•
Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
•
Series Equivalent Large–Signal Characterization
•
Capable of 30:1 VSWR Load Mismatch at Rated Output Power and Supply
Voltage
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Silicon Nitride Passivated
MRF894
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
30
50
4.0
7.0
115
0.66
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
θJC
Max
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
30
50
4.0
—
—
—
—
—
—
—
—
10
Vdc
Vdc
Vdc
mAdc
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF894
21
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
10
—
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
45
—
pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(Pout = 30 W, VCC = 24 Vdc, f = 900 MHz)
Collector Efficiency
(Pout = 30 W, VCC = 24 Vdc, f = 900 MHz)
GPE
η
7.0
55
8.5
60
—
—
dB
%
L1
C4
B
SOCKET
VRE
PORT
C1
+
C2
SOCKET
C9
B
L4
+ 24 Vdc
+
C12
C13
C5
DUT
C7
C3
TL1
TL2
C6
C8
B — Ferrite Bead, Ferroxcube 56–590–65–3B
C1, C13 — 5.0
µF,
50 Vdc
C2, C12 — 1000 pF Unelco
C3, C11 — 47 pF, 100 Mil Chip Capacitor
C4, C9 — 91 pF, Mini–Underwood
C5, C6 — 12 pF, Mini–Underwood
C7 — 18 pF, Mini–Underwood
C8 — 24 pF, Mini–Underwood
C10 — 0.8 – 8.0 pF Johanson Gigatrim
L1, L4 — 11 Turns #20 Enameled Over 10
Ω
Carbon Resistor
L2, L3 — 4 Turns #20 Enameled, .15″ ID
TL1, TL4 — Micro Strip Line, 50
Ω
TL2 — Micro Strip, Zo = 30
Ω, λ/4
@ 875 MHz
TL3 — Micro Strip, Zo = 22
Ω, λ/4
@ 875 MHz
Board — 0.032″ Glass Teflon
Board —
2 oz. Cu CLAD,
ε
r = 2.55
Figure 1. 850 – 900 MHz Broadband Circuit Schematic
MRF894
22
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
C11
TL3
TL4
C10
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
L2
L3
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇÇ
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
50
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
900 MHz
50
Pin = 8 W
40
40
30
960 MHz
30
6W
20
VCC = 24 V
20
4W
10
10
VCC = 24 V
0
850
875
900
925
f, FREQUENCY (MHz)
950
0
0
2
4
6
Pin, INPUT POWER (WATTS)
8
10
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Frequency
50
Pout , OUTPUT POWER (WATTS)
10
GPB
80
40
Pin = 6 W
G PB , POWER GAIN (dB)
4W
3W
8
70
η
c , COLLECTOR EFFICIENCY
30
6
η
c
INPUT VSWR
1.5:1
60
20
4
VCC = 24 V
Pin = 6 W
VSWR
50
10
f = 900 MHz
0
10
14
18
22
VCC, SUPPLY VOLTAGE (VOLTS)
26
30
2
0
850
1.25:1
860
870
880
f, FREQUENCY (MHz)
890
1:1
900
Figure 4. Output Power versus Supply Voltage
Figure 5. Typical Broadband Circuit Performance
MOTOROLA RF DEVICE DATA
MRF894
23
10
VCC = 24 Vdc, Pout = 30 W
5.0
f = 800 MHz
850
Zin
900
960
Zo = 10
Ω
960
900
f = 800 MHz
0
1.0
f
Frequency
MHz
800
850
900
960
Zin
Ohms
0.9 + j4.5
1.3 + j4.7
1.6 + j4.4
1.5 + j3.7
ZOL*
Ohms
1.0 + j0.7
1.1 + j0.9
1.2 + j1.1
1.2 + j1.3
ZOL*
850
2.0
3.0
4.0 5.0 6.0 7.0 8.0 9.0 10
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
Figure 6. Series Equivalent Impedance
MRF894
24
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
IDENTIFICATION
NOTCH
6
-A-
L
5
4
Q
2 PL
0.15 (0.006)
M
T A
M
N
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
-N-
1
2
3
K
F
D
2 PL
0.38 (0.015)
M
B
J
H
C
E
-T-
SEATING
PLANE
T A
M
M
N
M
M
0.38 (0.015)
T A
N
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
DIM
A
B
C
D
E
F
H
J
K
L
N
Q
BASE (COMMON)
EMITTER (INPUT)
BASE (COMMON)
BASE (COMMON)
COLLECTOR (OUTPUT)
BASE (COMMON)
INCHES
MIN
MAX
0.965 0.985
0.355 0.375
0.230 0.260
0.115 0.125
0.102 0.114
0.075 0.085
0.160 0.170
0.004 0.006
0.090 0.110
0.725 BSC
0.225 0.241
0.125 0.135
MILLIMETER
MIN
MAX
24.52 25.01
9.02
9.52
5.85
6.60
2.93
3.17
2.59
2.90
1.91
2.15
4.07
4.31
0.11
0.15
2.29
2.79
18.42 BSC
5.72
6.12
3.18
3.42
CASE 319–07
ISSUE M
MOTOROLA RF DEVICE DATA
MRF894
25
FPGA/CPLD
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