MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5S19150/D
MRF5S19150
RF Power Field Effect Transistors MRF5S19150R3
N–Channel Enhancement–Mode Lateral MOSFETs
MRF5S19150S
Designed for PCN and PCS base station applications at frequencies from
MRF5S19150SR3
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
The RF Sub–Micron MOSFET Line
applications.
•
Typical 2–Carrier N–CDMA Performance for V
DD
= 28 Volts,
P
out
= 32 Watts, I
DQ
= 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 32 Watts Avg.
Power Gain — 14 dB
Efficiency — 26%
ACPR — –50 dB
IM3 — –36.5 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
100 Watts CW Output Power
•
Excellent Thermal Stability
•
Qualified Up to a Maximum of 32 V Operation
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1990 MHz, 32 W, 28 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465B–03, STYLE 1
NI–880
MRF5S19150, R3
CASE 465C–02, STYLE 1
NI–880S
MRF5S19150S, R3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
–0.5, +15
357
2
–65 to +150
200
100
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Watts
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 80°C, 32 W CW
Symbol
R
θJC
0.49
0.53
Max
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
1
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1400 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.6 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
3.1
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.8
0.24
9
3.5
—
—
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carriers.
Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 32 W Avg, I
DQ
= 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 32 W Avg, I
DQ
= 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 32 W Avg, I
DQ
= 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured
over 1.2288 MHz Bandwidth at f1 –2.5 MHz and f2 +2.5 MHz
referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 32 W Avg, I
DQ
= 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR
measured over 30 kHz Bandwidth at f1 –885 MHz and f2 +885 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 32 W Avg, I
DQ
= 1400 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz)
(1) Part is internally matched both on input and output.
G
ps
13
14
—
dB
η
24
26
—
%
IM3
—
–36.5
–35
dBc
ACPR
—
–50
–48
dBc
IRL
—
–17
–9
dB
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
2
MOTOROLA RF DEVICE DATA
+
V
GG
C9
R1
R2
+
C8
C7
C6
B1
R3
C5
C14
Z11
C17
C18
+
C19
+
C21
+
C20
+
C22
V
DD
+
C23
C15
C16
RF
INPUT
Z8
Z1
Z2
C1
Z3
C2
Z4 C4
C3
Z5
Z6
Z7
DUT
Z10
Z13
Z14
C24
Z15
RF
OUTPUT
Z12
Z9
+
+
C33
+
C31
B2
+
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C11
C12
R4
C13
C25
C26
C27
C32
+
C30
C28
C29
1.023″ x 0.082″ Microstrip
0.398″ x 0.082″ Microstrip
0.203″ x 0.082″ Microstrip
0.074″ x 0.082″ Microstrip
0.630″ x 0.084″ Microstrip
0.557″ x 1.030″ x 0.237″ Microstrip Taper
0.103″ x 1.030″ Microstrip
1.280″ x 0.046″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
1.280″ x 0.046″ Microstrip
0.090″ x 1.055″ Microstrip
1.125″ x 0.068″ Microstrip
1.125″ x 0.068″ Microstrip
0.505″ x 1.055″ Microstrip
0.898″ x 0.105″ Microstrip
1.133″ x 0.082″ Microstrip
Arlon GX0300–55–22, 0.03″,
ε
r
= 2.55
Figure 1. MRF5S19150 Test Circuit Schematic
Table 1. MRF5S19150 Test Circuit Component Designations and Values
Part
B1, B2
C1, C2
C3
C4, C5, C13, C14, C24, C25
C8, C10
C6, C12, C16, C17, C18, C27, C28, C29
C7, C11, C15, C26
C9
C23
C19, C20, C21, C22, C30, C31, C32, C33
R1
R2
R3, R4
Short RF Beads
0.6 – 4.5 Variable Capacitors, Gigatrim
0.8 pF Chip Capacitor, B Case
9.1 pF Chip Capacitors, B Case
1.0
µF,
50 V SMT Tantalum Capacitors
0.1
µF
Chip Capacitors, B Case
1000 pF Chip Capacitors, B Case
100
µF,
50 V Electrolytic Capacitor
470
µF,
63 V Electrolytic Capacitor
22
µF,
35 V Tantalum Capacitors
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
Description
MOTOROLA RF DEVICE DATA
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
3
C17 C18
C9
V
GG
R2
R1
C15
C8
C7
C6
C16
C21 C22
C24
CUT OUT AREA
B1 R3
C14
C5
V
DD
C19 C20 C23
C4
C1
C2
C10
C3
C11
C12
C32 C33
C26
C27
B2
MRF5S19150
Rev 4
R4
C13
C25
C30 C31
C28 C29
Figure 2. MRF5S19150 Test Circuit Component Layout
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
-10
-20
-30
-40
-50
-60
IRL, INPUT RETURN LOSS (dB)
I
DQ
= 2100 mA
1700 mA
15
14
G ps , POWER GAIN (dB)
13
12
11
IRL
IM3
ACPR
1.228 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
9
8
7
6
10
V
DD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1400 mA
2-Carrier N-CDMA, 2.5 MHz Carrier Spacing
G
ps
η
40
35
30
25
20
-30
-35
-40
-45
-50
1920
1940
1960
1980
2000
-55
2020
5
1900
f, FREQUENCY (MHz)
Figure 3. 2–Carrier N–CDMA Broadband Performance
16
I
DQ
= 2100 mA
15
G ps , POWER GAIN (dB)
14
13
700 mA
12
11
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1700 mA
1400 mA
1050 mA
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
-15
-20
-25
-30
-35
-40
-45
-50
-55
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two-Tone Measurement, 2.5 MHz Tone Spacing
700 mA
1400 mA
1050 mA
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20
-25
Pout , OUTPUT POWER (dBm)
-30
-35
-40
-45
-50
-55
-60
0.1
5th Order
7th Order
V
DD
= 28 Vdc, P
out
= 150 W (PEP), I
DQ
= 1400 mA
Two-Tone Measurements, Center Frequency = 1960 MHz
1
TWO-TONE SPACING (MHz)
10
3rd Order
59
58
57
56
55
54
53
52
51
50
49
35
36
37
38
39
V
DD
= 28 Vdc, I
DQ
= 1400 mA
Pulsed CW, 8
µsec
(on), 1 msec (off)
Center Frequency = 1960 MHz
40
41
42
43
44
45
P1dB = 53.01 dBm (199.99 W)
P3dB = 53.71 dBm (234.96 W)
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19150 MRF5S19150R3 MRF5S19150S MRF5S19150SR3
5
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