DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ221
NPN video transistor
Product specification
Supersedes data of 1996 July 18
File under Discrete Semiconductors, SC05
1996 Sep 04
Philips Semiconductors
Product specification
NPN video transistor
APPLICATIONS
•
Primarily intended for buffer stages
in high resolution colour monitors.
DESCRIPTION
NPN silicon transistor encapsulated
in a 3-lead plastic SOT54 package.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
1
2
3
BFQ221
MSB033
Fig.1 Simplified outline SOT54.
QUICK REFERENCE DATA
SYMBOL
V
CBO
I
C
P
tot
f
T
C
re
T
j
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
up to T
s
= 60
°C
I
C
= 25 mA; V
CE
= 10 V
I
C
= 0; V
CB
= 10 V
CONDITIONS
open emitter
−
−
−
1
1.7
−
TYP
MAX
100
100
1.15
−
−
150
V
mA
W
GHz
pF
°C
UNIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R
BE
= 100
Ω
open collector
see Fig.2
see Fig.2
up to T
s
= 60
°C;
note 1; see Fig.3
−
−
−
−
−
−
−65
−
MIN
95
3
100
100
1.15
+150
150
MAX
100
V
V
V
mA
mA
W
°C
°C
UNIT
1996 Sep 04
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ221
10
3
handbook, halfpage
IC
(mA)
10
2
MBG476
handbook, halfpage
1.2
MBG477
Ptot
(W)
0.8
10
0.4
1
10
10
2
VCE (V)
10
3
0
0
50
100
Ts (
o
C)
150
Fig.2 DC SOAR.
Fig.3 Power derating curve.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature of the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
f
T
C
re
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector-emitter leakage current
DC current gain
transition frequency
feedback capacitance
CONDITIONS
I
C
= 0.1 mA; I
E
= 0
I
C
= 0; I
E
= 0.1 mA
V
CE
= 50 V; V
BE
= 0
I
C
= 25 mA; V
CE
= 10 V;
see Fig.4
I
C
= 25 mA; V
CE
= 10 V;
f = 500 MHz; see Fig.5
I
C
= 0; V
CB
= 10 V; f = 1 MHz;
see Fig.6
3
MIN
100
95
3
−
20
−
−
−
−
−
−
−
1
1.7
TYP
−
−
−
100
−
−
−
GHz
pF
MAX
UNIT
V
V
V
µA
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
P
tot
= 1.15 W; up to T
s
= 60
°C;
note 1
VALUE
78
UNIT
K/W
collector-emitter breakdown voltage I
C
= 1 mA; R
BE
= 100
Ω
1996 Sep 04
Philips Semiconductors
Product specification
NPN video transistor
BFQ221
handbook, halfpage
60
MBG478
handbook, halfpage
1.2
MBG479
hFE
fT
(MHz)
0.8
40
20
0.4
0
0
20
40
60
80
100
IC (mA)
0
10
20
50
IC (mA)
10
2
V
CE
= 10 V; t
p
= 500
µs.
V
CE
= 10 V; f = 500 MHz.
Fig.4
DC current gain as a function of collector
current; typical values.
Fig.5
Transition frequency as a function of
collector current; typical values.
handbook, halfpage
4
MBG480
Cre
(pF)
3
2
1
0
0
2
4
6
8
10
VCB (V)
f = 1 MHz.
Fig.6
Feedback capacitance as a function of
collector-base voltage; typical values.
4
1996 Sep 04
Philips Semiconductors
Product specification
NPN video transistor
PACKAGE OUTLINE
BFQ221
andbook, full pagewidth
0.40
min
4.2 max
1.7
1.4
1
4.8
max
2.54
2
3
0.66
0.56
5.2 max
12.7 min
0.48
0.40
2.0 max
(1)
MBC014 - 1
Dimensions in mm.
Fig.7 SOT54.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Sep 04
5
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