DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ162
NPN video transistor
Product specification
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
1997 Oct 02
Philips Semiconductors
Product specification
NPN video transistor
FEATURES
•
Low output capacitance
•
Good thermal stability
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
•
Pre-stage driver in high-resolution
colour graphics monitors.
DESCRIPTION
NPN video transistor in a SOT32
(TO-126) package.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
Top view
1
2
halfpage
BFQ162
3
MBC077 - 1
Fig.1
Simplified outline
(SOT32; TO-126).
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CER
I
C
P
tot
h
FE
f
T
Note
1. T
s
is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
CER
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
115
°C;
note 1; see Fig.3
CONDITIONS
open emitter
open base
R
BE
= 100
Ω
open collector
−
−
−
−
−
−
−65
−
MIN.
MAX.
20
10
19
3
500
3
+175
175
V
V
V
V
mA
W
°C
°C
UNIT
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
T
s
≤
115
°C;
note 1
I
C
= 300 mA; V
CE
= 5 V; T
amb
= 25
°C
I
C
= 300 mA; V
CE
= 5 V; f = 100 MHz;
T
amb
= 25
°C
open emitter
R
BE
= 100
Ω
CONDITIONS
−
−
−
−
50
1
MIN.
−
−
−
−
60
−
TYP.
MAX.
20
19
500
3
−
−
GHz
UNIT
V
V
mA
W
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector-emitter cut-off current
DC current gain
CONDITIONS
I
C
= 5 mA; I
E
= 0
I
C
= 10 mA; I
B
= 0
I
C
= 10 mA; R
BE
= 100
Ω
I
E
= 1 mA; I
C
= 0
V
BE
= 0 V; V
CE
= 10 V
I
C
= 300 mA; V
CE
= 5 V;
T
amb
= 25
°C;
see Fig.4
I
C
= 100 mA; V
CE
= 5 V;
T
amb
= 25
°C;
see Fig.4
f
T
transition frequency
I
C
= 300 mA; V
CE
= 5 V;
f = 100 MHz; T
amb
= 25
°C;
see Fig.6
I
C
= i
c
= 0; V
CB
= 5 V; f = 1 MHz;
T
amb
= 25
°C;
see Fig.5
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
MIN.
20
10
19
3
−
50
40
1
TYP.
−
−
−
−
−
60
50
−
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
≤
115
°C;
note 1
BFQ162
VALUE
20
UNIT
K/W
MAX.
−
−
−
−
100
−
−
−
UNIT
V
V
V
V
µA
GHz
C
cb
C
c
collector-base capacitance
collector capacitance
−
−
4.2
5.8
−
−
pF
pF
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ162
MBB894
600
handbook, halfpage
IC
(mA)
500
handbook, halfpage
4
MBB895
Ptot
(W)
3
400
2
300
1
200
0
4
8
VCEO (V)
12
0
0
50
100
150
Ts (
o
C)
200
Fig.2 DC SOAR.
Fig.3 Power derating curve.
handbook, halfpage
80
MBB436
MBB896
handbook, halfpage
8
hFE
70
Ccb
(pF)
7
6
60
5
50
4
40
0
200
400
IC (mA)
600
3
0
10
20
VCB (V)
30
V
CE
= 5 V; T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
DC current gain as a function of
collector current; typical values.
Fig.5
Collector-base capacitance as a function of
collector-base voltage; typical values.
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ162
handbook, halfpage
3
MBB435
fT
(GHz)
2
1
0
0
100
200
IC (mA)
300
V
CE
= 5 V; f = 100 MHz; T
amb
= 25
°C.
Fig.6
Transition frequency as a function of
collector current; typical values.
1997 Oct 02
5
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