SEMICONDUCTORS
BUZ31
POWER MOS TRANSISTORS
FEATURE
•
•
•
•
•
Nchannel
Enhancement mode
Avalanche-rated
TO-220 envelope
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
I
DS
I
DM
I
AR
E
AR
E
AS
V
GS
R
DS(on)
P
T
t
J
t
stg
Ratings
Drain-Source Voltage
Continuous Drain Current T
C
= 37°C
Pulsed Drain Current T
C
= 25°C
Avalanche Current, Limited by T
jmax
Avalanche Energy, Periodic Limited by T
jmax
Avalanche Energy, Single pulse
I
D
= 14.5 A, V
DD
= 50 V, R
GS
= 25
Ω
L = 1.42 mH, T
j
= 25°C
Gate-Source Voltage
Drain-Source on Resistance
Power Dissipation at Case Temperature T
C
= 25°C
Operating Temperature
Storage Temperature range
Value
200
14.5
58
14.5
9
200
20
0.2
95
-55 to +150
-55 to +150
Unit
V
A
mJ
V
Ω
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Thermal Resistance, chip case
Thermal Resistance, chip to ambient
Value
<1.32
<75
Unit
K/W
01/10/2012
COMSET SEMICONDUCTORS
1/3
SEMICONDUCTORS
BUZ31
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
Ratings
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage Current
Drain-Source on Resistance
Test Condition(s)
I
D
= 250 µA, V
GS
= 0 V
I
D
=1 mA, V
GS
= V
DS
V
DS
= 200 V, V
GS
= 0 V
T
j
= 25 °C
V
DS
= 200 V, V
GS
= 0 V
T
j
= 125 °C
V
GS
= 20 V, V
DS
= 0 V
I
D
= 9 A, V
GS
= 10 V
Min
200
2.1
-
-
-
-
Typ
-
3
0.1
1
10
0.16
Max
-
4
1
Unit
V
V
µA
100
100
0.2
nA
Ω
DYNAMIC CHARACTERISTICS
Symbol
g
fs
C
ISS
C
OSS
C
RSS
t
d(on)
t
r
t
d(off)
t
f
Ratings
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
Test Condition(s)
V
DS
>2 * I
D
* R
DS(on)max
I
D
= 9 A
V
GS
= 0 V, V
DS
= 25 V
f= 1MHz
Min
3
-
-
-
-
-
-
-
Typ
4.2
840
180
95
12
50
150
60
Max
-
1120
270
150
20
75
200
80
Unit
S
pF
V
DD
= 30 V, V
GS
= 10 V
I
D
= 3 A, R
GS
= 50
Ω
ns
REVERSE DIODE
Symbol
I
S
I
SM
V
SD
T
rr
Q
rr
Ratings
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Condition(s)
T
C
= 25°C
T
C
= 25°C
V
GS
= 0 V, I
F
= 29 A
V
R
= 100 V, I
F
= I
S
di
F
/dt = 100 A/µs
Min
-
-
-
-
-
Typ
-
-
1.1
170
1.1
Max
14.5
58
1.6
-
-
Unit
A
V
ns
µC
01/10/2012
COMSET SEMICONDUCTORS
2/3
SEMICONDUCTORS
BUZ31
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Gate
Drain
Source
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
01/10/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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