NPN EPITAXIAL BASE
DARLINGTON POWER TRANSISTOR
BDX63 / BDX63A / BDX63B / BDX63C
Hermetic TO3 Metal Package
Ideally Suited for General Purpose Switching
and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
BDX63
VCEO
VCBO
VEBO
IC
ICM
IB
Ptot
TJ
Tstg
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current, Per Device
Collector Current
Collector Current (peak)
Base Current
Total Power Dissipation @ TC = 25°C
Junction Temperature Range
Storage Temperature Range
60V
80V
BDX63A
80V
100V
5V
8A
12A
150mA
90W
-55 to +200°C
-65 to +200°C
BDX63B
100V
120V
BDX63C
120V
140V
THERMAL PROPERTIES
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.94
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab
assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number: 10935
Issue: 1
Page: 1 of 3
NPN EPITAXIAL BASE
DARLINGTON POWER TRANSISTOR
BDX63 / BDX63A / BDX63B / BDX63C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
ICBO
ICEO
IEBO
hFE
(1)
VBE
(1)
VCE(sat)
VF
Parameters
Collector – Base Cut-Off
Current
Collector – Emitter Cut-Off
Current
Emitter – Base Cut-Off Current
DC Current Gain
Base – Emitter Voltage
Collector – Emitter Saturation
Voltage
Diode, Forward Voltage
Test Conditions
IE = 0
VCB = VCEOmax
IE = 0
VCB = ½VCBOmax
TA = 150°C
IB = 0
IC = 0
IC = 0.5A
IC = 3A
IC = 8A
IC = 3A
IC = 3A
IF = 3A
VCE = ½VCEOmax
VEB = 5V
VCE = 3V
VCE = 3V
VCE = 3V
VCE = 3V
IB = 12mA
0.86
1475
1000
5200
2.5
2
V
-
Min.
Typ
Max.
0.2
2
mA
0.5
5
Units
DYNAMIC CHARACTERISTICS
COBO
fhfe
(2)
|hfe|
(2)
Output Capacitance
Cut-Off Frequency
Small Signal Current Gain
IE = 0
f = 1.0MHz
IC = 3A
IC = 3A
f = 1.0MHz
VCB = 10V
VCE = 3V
VCE = 3V
150
100
100
pF
kHz
-
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
(2) Not a Production Test, By Design Only
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number: 10935
Issue: 1
Page: 2 of 3
NPN EPITAXIAL BASE
DARLINGTON POWER TRANSISTOR
BDX63 / BDX63A / BDX63B / BDX63C
C
B
Ω
Ω
E
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number: 10935
Issue: 1
Page: 3 of 3
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