DISCRETE SEMICONDUCTORS
DATA SHEET
*
M3D125
BC177
PNP general purpose transistor
Product specification
Supersedes data of 1997 May 01
File under Discrete Semiconductors, SC04
1997 Jun 04
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a TO-18; SOT18 metal package.
NPN complement: BC107.
3
BC177
PINNING
PIN
1
2
3
emitter
base
collector, connected to the case
DESCRIPTION
1
handbook, halfpage
2
3
2
MAM263
1
Fig.1
Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
T
amb
≤
25
°C
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz
open emitter
open base
CONDITIONS
−
−
−
−
125
100
MIN.
MAX.
−50
−45
−200
300
500
−
MHz
V
V
mA
mW
UNIT
1997 Jun 04
2
Philips Semiconductors
Product specification
PNP general purpose transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BC177
MAX.
−50
−45
−5
−100
−200
−200
300
+150
175
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-c
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to case
note 1
CONDITIONS
VALUE
0.5
0.2
UNIT
K/mW
K/mW
1997 Jun 04
3
Philips Semiconductors
Product specification
PNP general purpose transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
BC177A
BC177B
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
Note
1. V
BE
decreases by about
−2
mV/K with increasing temperature.
collector-emitter saturation voltage I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−0.5
mA
I
C
=
−100
mA; I
B
=
−5
mA
I
C
=
−2
mA; V
CE
=
−5
V; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−200 µA;
V
CE
=
−5
V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
CONDITIONS
I
E
= 0; V
CB
=
−20
V
I
E
= 0; V
CB
=
−20
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V
I
C
=
−2
mA; V
CE
=
−5
V
125
240
−
−
−
−
−600
−
−
180
290
−75
−250
−700
−850
−650
4
−
−
MIN.
−
−
−
125
TYP.
−1
−
−
140
BC177
MAX.
−15
−10
50
500
260
500
−300
−
−
−
−750
6
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
mV
pF
MHz
dB
I
C
=
−10
mA; V
CE
=
−5
V; f = 100 MHz 100
1997 Jun 04
4
Philips Semiconductors
Product specification
PNP general purpose transistor
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
BC177
SOT18/13
j
B
α
seating plane
w
M
A
M
B
M
1
k
D
1
b
2
3
a
A
D
A
L
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
A
5.31
4.74
a
2.54
b
0.47
0.41
D
5.45
5.30
D1
4.70
4.55
j
1.03
0.94
k
1.1
0.9
L
15.0
12.7
w
0.40
α
45°
OUTLINE
VERSION
SOT18/13
REFERENCES
IEC
B11/C7 type 3
JEDEC
TO-18
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
1997 Jun 04
5
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