DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BCP68
NPN medium power transistor
Product specification
Supersedes data of 1997 Apr 09
1999 Apr 08
Philips Semiconductors
Product specification
NPN medium power transistor
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 20 V).
APPLICATIONS
•
General purpose switching and amplification under high
current conditions.
handbook, halfpage
BCP68
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
4
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complement: BCP69.
1
Top view
2
3
MAM287
2, 4
1
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
32
20
5
1
2
200
1.37
+150
150
+150
V
V
V
A
A
mA
W
°C
°C
°C
UNIT
1999 Apr 08
2
Philips Semiconductors
Product specification
NPN medium power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
91
10
BCP68
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 25 V
I
E
= 0; V
CB
= 25 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V
I
C
= 5 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 1 V; see Fig.2
I
C
= 1 A; V
CE
= 1 V; see Fig.2
DC current gain
BCP68-25
V
CEsat
V
BE
C
c
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage I
C
= 1 A; I
B
= 100 mA
base-emitter voltage
collector capacitance
transition frequency
DC current gain ratio of the
complementary pairs
I
C
= 5 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 1 V
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 0.5 A;
V
CE
= 1 V
I
C
= 500 mA; V
CE
= 1 V; see Fig.2
160
−
−
−
−
40
−
−
−
620
−
38
−
−
375
500
−
1
−
−
1.6
mV
mV
V
pF
MHz
MIN.
−
−
−
50
85
60
TYP.
−
−
−
−
−
−
MAX. UNIT
100
10
100
−
375
−
nA
µA
nA
1999 Apr 08
3
Philips Semiconductors
Product specification
NPN medium power transistor
BCP68
300
handbook, full pagewidth
hFE
250
MGD844
200
150
100
50
0
10
−1
1
10
10
2
10
3
IC (mA)
10
4
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
1999 Apr 08
4
Philips Semiconductors
Product specification
NPN medium power transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BCP68
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 08
5
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