MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9045/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common - source amplifier applications in
28 volt base station equipment.
•
Typical Two - Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD — - 32 dBc
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9045LR1
MRF9045LSR1
945 MHz, 45 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF9045LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF9045LSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF9045LR1
MRF9045LSR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
MRF9045LR1
MRF9045LSR1
Symbol
R
θJC
Symbol
V
DSS
V
GS
P
D
Value
65
- 0.5, + 15
125
0.71
175
1
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Max
1.4
1.0
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
MRF9045LR1 MRF9045LSR1
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 350 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
69
37
1.5
—
—
—
pF
pF
pF
(continued)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
3
3.7
0.19
4
4
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF9045LR1 MRF9045LSR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
G
ps
17
18.8
—
dB
Symbol
Min
Typ
Max
Unit
η
38
42
—
%
IMD
—
- 32
- 28
dBc
IRL
—
- 14
-9
dB
G
ps
—
18.5
—
dB
η
—
41
—
%
IMD
—
- 33
—
dBc
IRL
—
13
—
dB
P
1dB
—
55
—
W
G
ps
—
18
—
dB
η
—
60
—
%
Ψ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
MRF9045LR1 MRF9045LSR1
3
B2
C14
L2
B1
V
GG
+
C6
C7
L1
Z8
RF
OUTPUT
Z14 C13 Z15
+
C15
+
C16
+
V
DD
C17
C9
Z9
C8
Z10
Z11
Z12
Z13
C10
C11
C12
RF
INPUT Z1
C4
C1 Z2
Z3
Z4
Z5
Z6
Z7
C5
C2
C3
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5, C8, C9
C6, C15, C16
C10
C12
C17
L1, L2
Z1
Z2
Z3
Short Ferrite Bead Surface Mount
Long Ferrite Bead Surface Mount
47 pF Chip Capacitors, B Case
0.8 - 8.0 pF Gigatrim Variable Trim Capacitors
10 pF Chip Capacitors, B Case
10
µF,
35 V Tantalum Surface Mount Chip Capacitors
2.2 pF Chip Capacitor, B Case
0.7 pF Chip Capacitor, B Case - MRF9045LS
1.3 pF Chip Capacitor, B Case - MRF9045
220
µF,
50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors, Coilcraft
0.260″ x 0.080″ Microstrip
0.610″ x 0.120″ Microstrip
0.260″ x 0.320″ Microstrip
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
PCB
0.360″ x 0.320″ Microstrip
0.240″ x 0.320″ x 0.620″, Taper
0.140″ x 0.620″ Microstrip
0.510″ x 0.620″ Microstrip
0.330″ x 0.320″ Microstrip
0.140″ x 0.320″ Microstrip
0.070″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
0.930″ x 0.080″ Microstrip
0.180″ x 0.080″ Microstrip
0.350″ x 0.080″ Microstrip
Arlon GX - 0300 - 55 - 22, 0.03″,
ε
r
= 2.55
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
C6
C17
V
GG
B1
B2
C7
C14
WB1
WB2
L1
C5
C9
C8
C10
L2
V
DD
C15 C16
C13
C11
C12
C1
C2
C3
CUT OUT AREA
C4
MRF9045
900 MHz
Rev−01
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9045LR1 MRF9045LSR1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
h
, DRAIN
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
−12
20
19
G ps , POWER GAIN (dB)
18
17
16
15
14
IRL
13
12
930
935
940
945
950
f, FREQUENCY (MHz)
955
−36
−38
960
IMD
G
ps
h
V
DD
= 28 Vdc
P
out
= 45 W (PEP)
I
DQ
= 350 mA
Two−Tone Measurement,
100 kHz Tone Spacing
55
50
45
40
−30
−32
−34
−14
−16
Figure 3. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
20.0
19.5
G ps , POWER GAIN (dB)
19.0
18.5
18.0
17.5
17.0
16.5
0.5
1
V
DD
= 28 Vdc
f1 = 945 MHz
10
P
out
, OUTPUT POWER (WATTS) PEP
100
I
DQ
= 525 mA
400 mA
350 mA
300 mA
−10
−20
−30
−40
−50
−60
−70
350 mA
400 mA
V
DD
= 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
I
DQ
= 300 mA
525 mA
0.5
1
10
100
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−10
−20
−30
−40
−50
−60
−70
−80
−90
0.5
20
V
DD
= 28 Vdc
I
DQ
= 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
3rd Order
19
Gps, POWER GAIN (dB)
18
17
16
15
14
7th Order
1
10
100
P
out
, OUTPUT POWER (WATTS) PEP
13
0.1
1
10
h
G
ps
IRL, INPUT RETURN
LOSS (dB)
70
60
50
40
30
20
V
DD
= 28 Vdc
I
DQ
= 350 mA
f1 = 945 MHz
100
10
0
h
, DRAIN EFFICIENCY (%)
5th Order
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain, Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
MRF9045LR1 MRF9045LSR1
5
NXP MCU
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