LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
•
•
•
•
LDTC114EET1G Series
S-LDTC114EET1G Series
SC-89
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Rating
Total Device Dissipation,
FR−4 Board (Note 1) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @ T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage Temperature
Range
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−55 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Value
Unit
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
×
1.0 Inch Pad
Rev.B 1/9
LESHAN RADIO COMPANY, LTD.
LDTC114EET1G Series,S-LDTC114EET1G Series
ORDERING INFORMATION AND RESISTOR VALUES
Device
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
Marking
8A
8B
8C
8D
94
8F
8H
8J
8K
8L
8M
8N
8P
R1 (K)
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
R2 (K)
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
Package
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
SC−89
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
−
−
nAdc
nAdc
mAdc
Collector−Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
Rev.B 2/9
LESHAN RADIO COMPANY, LTD.
LDTC114EET1G Series,S-LDTC114EET1G Series
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
h
FE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
−
60
100
140
140
350
350
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) LDTC123EET1G
(I
C
= 10 mA, I
B
= 1 mA) LDTC143TET1G/LDTC114TET1G/
LDTC143EET1G/LDTC143ZET1G/LDTC124XET1G
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
LDTC114EET1G
LDTC124EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC144EET1G
LDTC115EET1G
LDTC144WET1G
V
CE(sat)
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
−
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
LDTC143TET1G
LDTC143ZET1G
LDTC114TET1G
LDTC115 EET1G
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
Vdc
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
LDTC114EET1G
LDTC124EET1G
LDTC144EET1G
LDTC114YET1G
LDTC114TET1G
LDTC143TET1G
LDTC123EET1G
LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC115EET1G
LDTC144WET1G
LDTC114EET1G/LDTC124EET1G/
LDTC144EET1G/LDTC115EET1G
LDTC114YET1G
LDTC143TET1G/LDTC114TET1G
LDTC123EET1G/LDTC143EET1G
LDTC143ZET1G
LDTC124XET1G
LDTC123JET1G
LDTC144WET1G
Symbol
R1
Min
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
Typ
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
Max
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
Unit
kW
Resistor Ratio
R
1
/R
2
Rev.B 3/9
LESHAN RADIO COMPANY, LTD.
LDTC114EET1G Series,S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
1
Ic/Ib=10
1000
hFE, DC CURRENT GAIN (NORMALIZED)
Vce=10V
100
0.1
10
0.01
0
10
20
30
40
50
60
1
0
20
40
60
80
100
120
IC, COLLECTOR CURRENT (mA)
-55℃
25℃
75℃
100℃
125℃
-55℃
IC, COLLECTOR CURRENT (mA)
25℃
75℃
100℃
125℃
Fig. 1 VCE(sat) VS IC
Fig. 2 DC CURRENT GAIN
4.5
100
IC, COLLECTOR CURRENT (mA)
4
f = 1 MHz
IE = 0 A
Vo=5V
10
Cob, CAPACITANCE (pF)
3.5
3
2.5
2
1.5
1
0.5
0
0
10
20
30
40
50
60
1
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
-55℃
-25℃
25℃
75℃
125℃
Fig. 3 OUTPUT CAPACITANCE
Fig. 4 OUTPUT CURRENT VS INPUT VOLTAGE
Rev.B 4/9
LESHAN RADIO COMPANY, LTD.
LDTC114EET1G Series,S-LDTC114EET1G Series
TYPICAL ELECTRICAL CHARACTERISTICS − LDTC114EET1G
100
Vo=0.2V
Vin, INPUT VOLTAGE (V)
10
1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
-55℃
COLLECTOR 25℃
CURRENT:Ic(mA)
-25℃
75℃
125℃
Fig. 5 INPUT VOLTAGE VS OUTPUT CURRENT
Rev.B 5/9
Microchip MCU
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