PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 68; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 47K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323
| 参数名称 | 属性值 |
| 厂商名称 | Galaxy Microelectronics |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 68 |
| JESD-30 代码 | R-PDSO-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | PNP |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| Base Number Matches | 1 |
| DTA144EUA | DTA124EUA | DTA143EUA | DTA114EUA | |
|---|---|---|---|---|
| 描述 | PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 68; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 47K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 | PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 | PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 20; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 4.7K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-323 | 50V,50mA,PNP Bipolar Digital Transistor, Diodes, PNP, 50V, 50mA, 30, 0.3V, 250(typ) |
| 厂商名称 | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 68 | 56 | 20 | 30 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP | PNP | PNP |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| 极性 | - | PNP | PNP | PNP |
| V(BR)CEO (V) min. | - | 50 | 50 | 50 |
| IC Continuous (mA) | - | 30 | 100 | 50 |
| Gi | - | 56 | 20 | 30 |
| VO(ON) (V) | - | 0.3 | 0.3 | 0.3 |
| fT MHz | - | 250(typ) | 250(typ) | 250(typ) |
| R1 (kΩ) | - | 22 | 4.7 | 10 |
| R2 (kΩ) | - | 22 | 4.7 | 10 |
| R1/R2 typ | - | 1 | 1 | 1 |
| Vi(off) (V) max. | - | 0.5 | 0.5 | 0.5 |
| Vi(on) (V) min. | - | 3 | 3 | 3 |
| PD (mW) | - | 200 | 200 | 200 |
| AEC Qualified | - | No | No | No |
| 最高工作温度 | - | 150 | 150 | 150 |
| 最低工作温度 | - | -55 | -55 | -55 |
| MSL等级 | - | 1 | 1 | 1 |
| 是否无铅 | - | Yes | Yes | Yes |
| 符合Reach | - | Yes | Yes | Yes |
| 符合RoHS | - | Yes | Yes | Yes |
| ECCN代码 | - | EAR99 | EAR99 | EAR99 |
| Package Outlines | - | SOT-323 | SOT-323 | SOT-323 |
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