VISHAY
BYV28/...
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
\
Features
•
•
•
•
•
Controlled avalanche characteristic
Low forward voltage
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
Applications
Very fast rectification e.g. for switch mode power sup-
ply
949588
Mechanical Data
Case:
Sintered glass case, SOD 64
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
860 mg, (max. 1000 mg)
Parts Table
Part
BYV28-50
BYV28-100
BYV28-150
BYV28-200
Type differentiation
V
R
= 50 V; I
FAV
= 3.5 A
V
R
= 100 V; I
FAV
= 3.5 A
V
R
= 150 V; I
FAV
= 3.5 A
V
R
= 200 V; I
FAV
= 3.5 A
SOD64
SOD64
SOD64
SOD64
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage, non repetitive
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Reverse voltage = Repetitive peak reverse
voltage
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
Repetitive peak forward current
t
p
= 10 ms, half sinewave
Sub type
BYV28/50
BYV28/100
BYV28/150
BYV28/200
BYV28/50
BYV28/100
BYV28/150
BYV28/200
Symbol
V
RSM
V
RSM
V
RSM
V
RSM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FRM
Value
55
110
165
220
50
100
150
200
90
25
Unit
V
V
V
V
V
V
V
V
A
A
Document Number 86044
Rev. 5, 07-Jan-03
www.vishay.com
1
BYV28/...
Vishay Semiconductors
Parameter
Average forward current
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
Junction and storage temperature range
I
(BR)R
= 1 A, T
j
= 175 °C
Test condition
Sub type
Symbol
I
FAV
E
R
T
j
= T
stg
VISHAY
Value
3.5
20
- 55 to
+ 175
Unit
A
mJ
°C
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Sub type
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
I
F
= 5 A
I
F
= 5 A, T
j
= 175 °C
V
R
= V
RRM
V
RSM
V
R
= V
RRM
, T
j
= 165 °C
Reverse recovery time
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
Test condition
Sub type
Symbol
V
F
V
F
I
R
I
R
I
R
t
rr
Min
Typ.
Max
1.1
0.89
1
100
150
30
Unit
V
V
µA
µA
µA
ns
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
40
100.000
30
I
F
– Forward Current ( A)
10.000
T
j
=175°C
T
j
=25°C
1.000
0.100
0.010
0.001
20
l
l
10
T
L
=constant
0
0
5
10
15
20
25
30
l – Lead Length ( mm )
94 9548
16453
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
F
– Forward Voltage ( V )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 86044
Rev. 5, 07-Jan-03
VISHAY
BYV28/...
Vishay Semiconductors
I
FAV
– Average Forward Current ( A )
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
R
thJA
v70K/W
PCB: d=25mm
V
R
=V
RRM
half sinewave
R
thJA
v25K/W
l=10mm
P
R
– Reverse Power Dissipation ( mW )
4.0
60
V
R
= V
RRM
50
40
30
20
10
0
40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (
°C
)
25
16456
P
R
–Limit
@100%V
R
P
R
–Limit
@80%V
R
16454
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (
m
A )
250
f=1MHz
200
150
100
50
0
25
50
75
100
125
150
175
16457
100
10
1
16455
0.1
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 4. Reverse Current vs. Junction Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
Package Dimensions in mm
Sintered Glass Case
SOD 64
Weight max. 1.0g
Cathode Identification
∅
4.3 max.
technical drawings
according to DIN
specifications
∅
1.35 max.
26 min.
4.2 max.
26 min.
94 9587
Document Number 86044
Rev. 5, 07-Jan-03
www.vishay.com
3
BYV28/...
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 86044
Rev. 5, 07-Jan-03
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