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BYW55GP

产品描述Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
产品类别分立半导体    二极管   
文件大小133KB,共2页
制造商Gulf Semiconductor
官网地址http://www.gulfsemi.com/
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BYW55GP概述

Rectifier Diode, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

BYW55GP规格参数

参数名称属性值
厂商名称Gulf Semiconductor
包装说明O-PALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
应用GENERAL PURPOSE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JEDEC-95代码DO-204AC
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流50 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
参考标准MIL-19500
最大重复峰值反向电压800 V
最大反向电流5 µA
最大反向恢复时间3 µs
表面贴装NO
端子形式WIRE
端子位置AXIAL
Base Number Matches1

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BYW54GP THRU BYW56GP
SINTERED GLASS JUNCTION
PLASTIC RECTIFIER
VOLTAGE:600 TO 1000V
CURRENT: 2.0A
FEATURE
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Capability of meeting environmental standard of
MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
Operate at Ta
=45°
with no thermal run away
C
Typical Ir<0.1µA
DO-15\DO-204AC
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25° unless otherwise stated,
C,
for capacitive load, derate current by 20%)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
reverse avalanche breakdown voltage
I
R
= 0.1 mA
V
(BR)R
(min)
BYW54GP
600
420
600
650
BYW55GP
800
560
800
900
2.0
50.0
1.0
20
5.0
100
3.0
50.0
35.0
BYW56GP
1000
700
1000
1100
units
V
V
V
V
A
A
V
mJ
µA
µS
PF
°C
/W
°C
Vrrm
Vrms
Vdc
Maximum Average Forward Rectified
Current 3/8”lead length at Ta =45°
C
Peak Forward Surge Current 10ms single
half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage
I
F
=1.0A
non-repetitive peak reverse avalanche energy
If(av)
Ifsm
Vf
E
RSM
Maximum DC Reverse Current
at rated DC blocking voltage
Typical Reverse Recovery Time
Typical Junction Capacitance
Typical Thermal Resistance
(Note 1)
Ta =25°
C
Ta=125°
C
(Note 2)
(Note 3)
(Note 4)
Ir
Trr
Cj
R(ja)
Storage and Operating Junction Temperature
Tstg, Tj
-65 to +175
Note: 1.L = 120 mH; Tj = Tj max prior to surge; inductive load switched off.
2.Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
4. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A7
www.gulfsemi.com

 
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