VISHAY
BYW52 to BYW56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
\
Features
•
•
•
•
•
Controlled avalanche characteristics
Glass passivated junction
Hermetically sealed package
Low reverse current
High surge current loading
Applications
Rectification, general purpose
Mechanical Data
Case:
Sintered glass case, SOD 57
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
370 mg, (max. 500 mg)
949539
Parts Table
Part
BYW52
BYW53
BYW54
BYW55
BYW56
Type differentiation
V
R
= 200 V; I
FAV
= 2 A
V
R
= 400 V; I
FAV
= 2 A
V
R
= 600 V; I
FAV
= 2 A
V
R
= 800 V; I
FAV
= 2 A
V
R
= 1000 V; I
FAV
= 2 A
SOD57
SOD57
SOD57
SOD57
SOD57
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive peak reverse
voltage
Test condition
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
see electrical characteristics
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
ϕ
= 180 °
t
p
= 20
µs
half sine wave, T
j
= 175 °C
t
p
= 10 ms, half sinewave
Sub type
BYW52
BYW53
BYW54
BYW55
BYW56
Symbol
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
V
R
=
V
RRM
I
FSM
I
FRM
I
FAV
P
R
Value
200
400
600
800
1000
50
12
2
1000
Unit
V
V
V
V
V
A
A
A
W
Document Number 86049
Rev. 5, 07-Jan-03
www.vishay.com
1
BYW52 to BYW56
Vishay Semiconductors
Parameter
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i
2
* t-rating
Junction and storage temperature range
Test condition
I
(BR)R
= 1 A, T
j
= 175 °C
Sub type
Symbol
E
R
i
2
*t
VISHAY
Value
20
8
Unit
mJ
A
2
*s
°C
T
j
= T
stg
- 55 to +
175
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25mm
Sub type
Symbol
R
thJA
R
thJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
I
F
= 1 A
V
R
= V
RRM
V
R
= V
RRM
, T
j
= 100 °C
I
R
= 100
µA,
t
p
/T = 0.01, t
p
= 0.3 ms
V
R
= 4 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
I
F
= 1 A, di/dt = 5 A/µs, V
R
= 50 V
I
F
= 1 A, di/dt = 5 A/µs
Test condition
Sub type
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
18
4
4
200
Min
Typ.
0.9
0.1
5
Max
1.0
1
10
1600
Unit
V
µA
µA
V
pF
µs
µs
nC
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
l
100
80
60
40
20
0
0
5
10
15
20
25
30
16350
l
10.000
I
F
– Forward Current ( A)
1.000
T
j
=175°C
T
j
=25°C
T
L
=constant
0.100
0.010
0.001
94 9101
l – Lead Length ( mm )
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
F
– Forward Voltage ( V )
Figure 1. Typ. Thermal Resistance vs. Lead Length
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com
2
Document Number 86049
Rev. 5, 07-Jan-03
VISHAY
BYW52 to BYW56
Vishay Semiconductors
I
FAV
– Average Forward Current ( A )
V
R
=V
RRM
half sinewave
2.0
1.5
1.0
0.5
0.0
0
20
R
thJA
=45K/W
l=10mm
P
R
– Reverse Power Dissipation ( mW )
2.5
400
350
300
250
200
150
100
50
0
P
R
–Limit
@100%V
R
V
R
= V
RRM
P
R
–Limit
@80%V
R
R
thJA
=100K/W
PCB: d=25mm
40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (
°C
)
25
16353
16351
50
75
100
125
150
T
j
– Junction Temperature (
°C
)
175
Figure 3. Max. Average Forward Current vs. Ambient Temperature
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
V
R
= V
RRM
C
D
– Diode Capacitance ( pF )
I
R
– Reverse Current (
m
A )
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
16354
f=1MHz
100
10
1
16352
0.1
1.0
10.0
100.0
T
j
– Junction Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 4. Reverse Current vs. Junction Temperature
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
Figure 6. Diode Capacitance vs. Reverse Voltage
1000
V
RRM
=1000V, R
thJA
=100K/W
100
t
p
/T=0.5
t
p
/T=0.2
10
t
p
/T=0.1
t
p
/T=0.05
t
p
/T=0.02
t
p
/T=0.01
1
10
–5
10
–4
T
amb
=60°C
T
amb
=70°C
T
amb
=100°C
10
–3
10
–2
10
–1
10
0
10
1
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
10
2
T
amb
=25°C
T
amb
=45°C
94 9178
t
p
– Pulse Length ( s )
Figure 7. Thermal Response
Document Number 86049
Rev. 5, 07-Jan-03
www.vishay.com
3
BYW52 to BYW56
Vishay Semiconductors
Package Dimensions in mm
∅
3.6 max.
Sintered Glass Case
SOD 57
Weight max. 0.5g
Cathode Identification
technical drawings
according to DIN
specifications
94 9538
VISHAY
∅
0.82 max.
26 min.
4.2 max.
26 min.
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4
Document Number 86049
Rev. 5, 07-Jan-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
BYW52 to BYW56
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86049
Rev. 5, 07-Jan-03
www.vishay.com
5
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