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HMT65789H-9

产品描述Standard SRAM, 16KX4, 25ns, CMOS, PDSO24,
产品类别存储    存储   
文件大小107KB,共9页
制造商TEMIC
官网地址http://www.temic.de/
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HMT65789H-9概述

Standard SRAM, 16KX4, 25ns, CMOS, PDSO24,

HMT65789H-9规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称TEMIC
Reach Compliance Codeunknown
Is SamacsysN
最长访问时间25 ns
I/O 类型COMMON
JESD-30 代码R-PDSO-G24
JESD-609代码e0
内存密度65536 bit
内存集成电路类型STANDARD SRAM
内存宽度4
功能数量1
端口数量1
端子数量24
字数16384 words
字数代码16000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16KX4
输出特性3-STATE
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP24,.4
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
电源5 V
认证状态Not Qualified
最大待机电流0.02 A
最小待机电流4.5 V
最大压摆率0.1 mA
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
Base Number Matches1

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MATRA MHS
HM 65789
16 K
×
4 High Speed CMOS SRAM with Output Enable
Introduction
The HM 65789 is a high speed CMOS static RAM
organized as 16384
×
4 bits. It is manufactured using
MHS’s high performance CMOS technology.
Access times as fast as 15 ns are available with maximum
power consumption of only 633 mW.
The HM 65789 features fully static operation requiring no
external clocks or timing strobes. The automatic
power-down feature reduces the power consumption by
60 % when the circuit is deselected.
Easy memory expansion is provided by an active low chip
select (CS), an active low output enable (OE) and three
state drivers.
All inputs and outputs of the HM 65789 are TTL
compatible and operate from single 5 V supply thus
simplifying system design.
The HM 65789 is 100 % processed following the test
methods of MIL STD 883 and/or ESA/SCC 9000 making
it ideally suitable for military/space applications that
demand superior levels of performance and reliability.
Features
D
Fast access time
Commercial : 15/20/25/35/45 ns
Industrial/military : 20/25/35/45/55 ns
D
Low power consumption
Active : 267 mW (typ)
Standby : 75 mW (typ)
D
Wide temperature range :
–55°C to + 125°C
D
D
D
D
300 mils width package
TTL compatible inputs and outputs
Asynchronous
Capable of withstanding greater than 2000 V electrostatic
discharge
D
Single 5 volt supply
D
Output enable
Interface
Block Diagram
Rev. C (19/12/94)
1

 
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