MATRA MHS
HM 65728B
2K
×
8 High Speed CMOS SRAM
Description
The HM 65728B is a high speed CMOSstatic RAM
organized as 2048
×
8 bits. It is manufactured using
MHS’s high performance CMOS technology.
Access times as fast as 25 ns are available with maximum
power consumption of only 600 mW.
The HM 65728B features fully static operation requiring
no external clocks or timing strobes. The automatic
power-down feature reduces the power consumption by
80 % when the circuit is deselected.
Easy memory expansion is provided by an active low chip
select (CS) and active low output enable (OE) and three
state drivers.
All inputs and outputs of the HM 65728 are TTL
compatible and operate from single 5V supply thus
simplifying system design.
The HM 65728B is 100 % processed following the test
methods of MIL STD 883 and/or ESA/SCC 9000 making
it ideally suitable for military/space applications that
demand superior levels of performance and reliability.
Features
D
Fast Access Time
Commercial : 25/35/45/55 ns (max)
Military : 25/35/45/55 ns (max)
D
Low Power Consumption Active :
550 mW (max)
Standby : 110 mW (max)
D
Wide Temperature Range :
–55°C to + 125°C
D
D
D
D
300 and 600 Mils Width Package
TTL Compatible Inputs and Outputs
Asynchronous
Capable of Withstanding Greater than 2000 V Electrostatic
Discharge
D
Single 5 Volt Supply
Interface
Block Diagram
Rev. C (16/08/95)
This datasheet has been downloaded from
http://www.digchip.com
at this
page
1
HM 65728B
Pin Configuration
Ceramic 300 mils, 24 pins, DIL
Plastic 300 & 600 mils, 24 pins, DIL
SOIC 300 mils, 24 pins
LCC, 32 pins
MATRA MHS
Pinout DIL/SOIC 24 pins (top view)
Pinout LCC 32 pins (top view)
Logic Symbol
Pin Names
A0–A10: Address inputs
I/O0–I/O7
Vcc
Gnd
: Input/Output
: Power
: Ground
CS
OE
W
: Chip Select
: Output Enable
: Write enable
Truth Table
CS
H
L
L
L
OE
X
L
H
L
W
X
H
L
L
DATA–IN
Z
Z
Valid
Valid
DATA–OUT
Z
Valid
Z
Z
MODE
Deselect
Read
Write
Write
2
Rev. C (16/08/95)
MATRA MHS
HM 65728B
Storage temperature : . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Output current into outputs (low) : . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Electro Static Discharge Voltage . . . . . . . . . . . . . . . . . . . . . . > 2000 V
(MIL STD 883 METHOD 3015.2)
Electrical Characteristics
Supply voltage to GND potential : . . . . . . . . . . . . . . . –0.5 V to +7.0 V
DC input voltage : . . . . . . . . . . . . . . . . . . . . . . . . . . . –3.0 V to +7.0 V
DC output voltage in high Z state : . . . . . . . . . . . . . . –0.5 V to +7.0 V
Operating Range
OPERATING VOLTAGE
Military
Automotive
Industrial
Commercial
(– 2)
–A
(– 9)
(– 5)
5 V
±
10 %
5 V
±
10 %
5 V
±
10 %
5 V
±
10 %
OPERATING TEMPERATURE
– 55_C to + 125_C
– 40_C to + 125_C
– 40_C to + 85_C
0_C to + 70_C
Recommended DC Operating Conditions
PARAMETER
Vcc
Gnd
VIL
VIH
DESCRIPTION
Supply Voltage
Ground
Input low voltage
Input high voltage
MINIMUM
4.5
0.0
– 0.3
2.2
TYPICAL
5.0
0.0
0.0
–
MAXIMUM
5.5
0.0
0.8
5.5
UNIT
V
V
V
V
Capacitance
PARAMETER
Cin
Cout
Note :
(1)
(1)
DESCRIPTION
Input capacitance
Output capacitance
MINIMUM
–
–
TYPICAL
–
–
MAXIMUM
5
7
UNIT
pF
pF
1. TA = 25°C, f = 1 MHz, Vcc = 5.0 V, these parameters are not tested.
DC Parameters
PARAMETER
IIX
IOZ
IOS
VOL
VOH
Note :
(3)
(3)
(4)
(5)
(2)
DESCRIPTION
Input leakage current
Output leakage current
Output short circuit current
Output low voltage
Output high voltage
MINIMUM
– 10.0
– 10.0
–
–
2.4
TYPICAL
–
–
–
–
–
MAXIMUM
10.0
10.0
– 300.0
0.4
–
UNIT
µA
µA
mA
V
V
2. Gnd < Vin < Vcc, Gnd < Vout < Vcc Output disabled.
3. Vcc = max, Vout = Gnd, duration of the short circuit should not exceed 30 seconds. Not more than 1 output should be
shorted at one time.
4. Vcc min, IOL = 8.0 mA.
5. Vcc min, IOH = -4.0 mA.
Rev. C (16/08/95)
3
HM 65728B
Consumption for Commercial (–5) Specification
SYMBOL
ICCSB
ICCOP
(6)
(7)
MATRA MHS
PARAMETER
Standby supply current
Dynamic operating current
65728B
H–5
20
100
65728B
K–5
20
100
65728B
M–5
20
100
65728B
N–5
30
100
UNIT
mA
mA
VALUE
max
max
Consumption for Military (–2) Automotive (–A), Industrial (–9) Specification
SYMBOL
ICCSB
ICCOP
Note :
(6)
(7)
PARAMETER
Standby supply current
Dynamic operating current
65728B
H–2/A/9
40
120
65728B
K–2/A/9
30
120
65728B
M–2/A/9
30
120
65728B
N–2/A/9
30
120
UNIT
mA
mA
VALUE
max
max
6. CS
≥
VIH, a pull-up resistor to Vcc on the CS input is required to keep the device deselected during Vcc power-up otherwise
ICCSB will exceed values above.
7. Vcc max, Output current = 0 mA, f = max, Vin = Vcc or Gnd.
AC Parameters
AC Conditions
Input pulse levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gnd to 3.0 V
Input rise : . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ns
Input timing reference levels : . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output loading IOL/IOH
(see figure 1a and 1b)
: . . . . . . . . . . . +30 pF
AC Test Loads and Waveforms
Figure 1
a
Figure 1 b
Figure 2
4
Rev. C (16/08/95)
MATRA MHS
Write Cycle : Commercial (–5) Specification
SYMBOL
TAVAV
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ(8)
TWLWH
TWHAX
TWHDX
TWHQX
TEHAX
Notes :
(8, 9)
HM 65728B
PARAMETER
Write cycle time
Address set–up time
Address valid to end of write
Data set–up time
CS low to write end
Write low to high Z
Write pulse width
Address hold to end of write
Data hold time
Write high to low Z
Address hold end CS
65728B
H–5
25
0
20
15
20
10
20
2
0
3
3
65728B
K–5
35
0
30
15
30
15
20
2
0
0
3
65728B
M–5
45
0
40
20
40
15
20
2
0
0
3
65728B
N–5
55
0
50
25
50
20
30
2
5
0
3
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VALUE
min
min
min
min
min
max
min
min
min
min
min
8. The data input set up and hold timing should be referenced to the rising edge of the signal that terminates the write.
9. At any given temperature and voltage condition, TWHQX is less than TWLQZ for all devices. These parameters are sampled
and not 100 % tested.
Write Cycle : Military (–2) Automotive (–A) Industrial (–9) Specification
SYMBOL
TAVAV
TAVWL
TAVWH
TDVWH
TELWH
TWLQZ(8)
TWLWH
TWHAX
TWHDX
TEHAX
PARAMETER
Write Cycle time
Address set–up time
Address valid to end of write
Data set–up time
CS low to write end
Write low to high Z
Write pulse width
Address hold to end of write
Data hold time
Address hold end CS
65728B
H–2
25
0
20
15
20
10
20
2
5
3
65728B
K–2
35
0
30
15
30
15
20
2
5
3
65728B
M–2
45
0
40
20
40
15
25
2
5
3
65728B
N–2
55
0
50
25
50
20
30
2
5
3
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
VALUE
min
min
min
min
min
max
min
min
min
min
Rev. C (16/08/95)
5
嵌入式系统
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