HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2005.12.02
Page No. : 1/4
HBD438T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic
package, intented for use in medium power linear and switching applications. The
complementary NPN type is HBD437T.
TO-126
Absolute Maximum Ratings
(T
A
=25°C)
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
stg
T
j
Parametor
Collector-Base Voltage (I
E
=0)
Collector-Emitter Voltage (V
BE
=0)
Collector-Emitter Voltage (I
B
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Collector Peak Current (t≤10ms)
Base Current
Total Dissipation at T
C
=25°C
Total Dissipation at T
A
=25°C
Storage Temperature
Max. Operating Junction Temperature
Value
-45
-45
-45
-5
-4
-7
-1
25
1.3
-55 to 150
150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Thermal Data
R
thj-case
R
thj-amb
Thermal Resistance Junction-case (Max.)
Thermal Resistance Junction-ambient (Max.)
6
96
°C/W
°C/W
Electrical Characteristics
(T
A
=25°C, unless otherwise specified)
Symbol
I
CBO
I
CES
I
EBO
*V
CEO(sus)
*V
CE(sat)
*V
BE
Parameter
Collector Cut-off Current (I
E
=0)
Collector Cut-off Current (V
BE
=0)
Emitter Cut-off Current (I
C
=0)
Collector-Emitter Sustaining Voltage (I
B
=0)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Test Conditions
V
CB
=-45V
V
CE
=-45V
V
EB
=-5V
I
C
=-100mA
I
C
=-2A, I
B
=-0.2A
I
C
=-10mA,V
CE
=-5V
I
C
=-2A, V
CE
=-1V
I
C
=-10mA, V
CE
=-5V
*h
FE
f
T
DC Current Gain
Transition Frequency
I
C
=-0.5A, V
CE
=-1V
I
C
=-2A, V
CE
=-1V
I
C
=-0.25A, V
CE
=-1V
Min.
-
-
-
-45
-
-
-
30
85
40
3
Typ.
-
-
-
-
-0.2
-0.58
-
130
140
-
-
Max.
-100
-100
-1
-
-0.6
-
-1.2
-
-
-
-
MHz
Unit
uA
uA
mA
V
V
V
V
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HBD438T
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2005.12.02
Page No. : 2/4
Saturation Voltage & Collector Current
Saturation Voltage (mV)
hFE@VCE=1V
hFE@VCE=5V
100
hFE
100
10
VCE(sat)@IC=10IB
1
10
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
10000
On Voltage & Collector Current
Saturation Voltage (mV)
1000
On Voltage (mV)
VBE(sat)@IC=10IB
1000
VBE(on)@VCE=1V
100
100
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Safe Operating Area
10
Collector Current-I
C
(A)
1
0.1
1ms
0.01
1
100ms
1s
10
100
Foward Voltage-V
CE
(V)
HBD438T
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-126 Dimension
D
A
M
B
1
2
3
N
K
Note: Green label is used for pb-free packing
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2005.12.02
Page No. : 3/4
J
Marking:
Pb Free Mark
H
438
Date Code
T
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
C
Pin Style: 1.Emitter 2.Collector 3.Base
G
F
H
L
DIM
A
B
C
D
F
G
H
J
K
L
M
N
Min.
3.60
6.90
13.00
7.20
0.65
1.00
4.52
1.14
0.90
0.45
2.92
2.00
Max.
4.40
7.60
16.50
8.50
0.88
1.42
4.62
1.50
1.50
0.60
3.40
2.70
Unit: mm
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-126
Plastic Package
HSMC Package Code: T
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBD438T
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HT200206
Issued Date : 2001.04.01
Revised Date : 2005.12.02
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HBD438T
HSMC Product Specification
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