Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | TT Electronics plc |
| 包装说明 | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 8 A |
| 集电极-发射极最大电压 | 120 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 15 |
| JEDEC-95代码 | TO-276AA |
| JESD-30 代码 | R-CBCC-N3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | PNP |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 10 MHz |
| Base Number Matches | 1 |
| BDS18SMD05 | BDS18SMD05-QR-B | BDS18SMD05R4 | BDS18SMD05-JQR-B | |
|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-276AA, Ceramic, Metal-Sealed Cofired, 3 Pin, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 不符合 |
| 包装说明 | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN | HERMETIC SEALED, CERAMIC, SMD05, 3 PIN |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
| 最大集电极电流 (IC) | 8 A | 8 A | 8 A | 8 A |
| 集电极-发射极最大电压 | 120 V | 120 V | 120 V | 120 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 15 | 15 | 15 | 15 |
| JEDEC-95代码 | TO-276AA | TO-276AA | TO-276AA | TO-276AA |
| JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | PNP | PNP | PNP | PNP |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 10 MHz | 10 MHz | 10 MHz | 10 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
| 厂商名称 | TT Electronics plc | - | TT Electronics plc | TT Electronics plc |
| Is Samacsys | N | - | N | N |
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