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BDS18SMD05R4: 产品描述8A, 120V, PNP, Si, POWER TRANSISTOR, TO-276AA, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN; 产品类别分立半导体晶体管; 文件大小343KB，共3页; 制造商SEMELAB; 标准

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BDS18SMD05R4概述

8A, 120V, PNP, Si, POWER TRANSISTOR, TO-276AA, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN

BDS18SMD05R4规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	SEMELAB
零件包装代码	TO-276AA
包装说明	CHIP CARRIER, R-CBCC-N3
针数	5
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	HIGH RELIABILITY
外壳连接	COLLECTOR
最大集电极电流 (IC)	8 A
集电极-发射极最大电压	120 V
配置	SINGLE
最小直流电流增益 (hFE)	15
JEDEC-95代码	TO-276AA
JESD-30 代码	R-CBCC-N3
JESD-609代码	e4
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	YES
端子面层	GOLD
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	10 MHz
Base Number Matches	1

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SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

BDS18SMD05

•

High Voltage

Hermetic Ceramic Surface Mount Package

Ideally suited for Power Linear, Switching

and general Purpose Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

≤

75°C

Total Power Dissipation at

Derate Above 75°C

Junction Temperature Range

Storage Temperature Range

-120V

-5V

-8A

-2A

80W

0.64W/°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

1.56

Units

°C/W

** This datasheet supersedes document 3346

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8671

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

BDS18SMD05R4相似产品对比

	BDS18SMD05R4	BDS18SMD05-QR-B	BDS18SMD05-JQR-B
描述	8A, 120V, PNP, Si, POWER TRANSISTOR, TO-276AA, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN	8A, 120V, PNP, Si, POWER TRANSISTOR, TO-276AA, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN	8A, 120V, PNP, Si, POWER TRANSISTOR, TO-276AA, HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
是否无铅	不含铅	含铅	含铅
是否Rohs认证	符合	不符合	不符合
零件包装代码	TO-276AA	TO-276AA	TO-276AA
包装说明	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
针数	5	5	5
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
外壳连接	COLLECTOR	COLLECTOR	COLLECTOR
最大集电极电流 (IC)	8 A	8 A	8 A
集电极-发射极最大电压	120 V	120 V	120 V
配置	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	15	15	15
JEDEC-95代码	TO-276AA	TO-276AA	TO-276AA
JESD-30 代码	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
元件数量	1	1	1
端子数量	3	3	3
最高工作温度	200 °C	200 °C	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	10 MHz	10 MHz	10 MHz
Base Number Matches	1	1	1
厂商名称	SEMELAB	-	SEMELAB
Is Samacsys	N	-	N

BDS18SMD05R4

BDS18SMD05R4概述

BDS18SMD05R4规格参数

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