BUL49A
MECHANICAL DATA
Dimensions in mm
40.01 (1.575)
Max.
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
•
•
•
•
•
•
•
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
EFFICIENT POWER SWITCHING
MILITARY AND HI–REL OPTIONS
EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
22.23 (0.875)
Max.
11.43 (0.450)
6.35 (0.250)
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
12.19 (0.48)
11.18 (0.44)
1.63 (0.064)
1.52 (0.060)
2
11.18 (0.440)
10.67 (0.420)
4.09 (0.161)
3.84 (0.151)
2 Pls
FEATURES
• Multi–base for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
• Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
• Triple Guard Rings for improved control of
high voltages.
1
16.97 (0.668)
16.87 (0.664)
TO3
Pin 1 – Base
Pin 2 – Emitter
Case is Collector
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
P
tot
T
stg
R
th
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage (I
B
= 0)
Emitter – Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Total Dissipation at T
case
= 25°C
Operating and Storage Temperature Range
Thermal Resistance (junction-case)
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
600V
300V
10V
25A
40A
200W
–65 to 175°C
Max. 0.7°CW
Prelim. 4/99
BUL49A
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
V
CEO(sus)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Test Conditions
Min.
300
600
10
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
Collector – Emitter Sustaining Voltage I
C
= 10mA
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector – Base Cut–Off Current
Collector – Emitter Cut–Off Current
Emitter Cut–Off Current
I
C
= 1mA
I
E
= 1mA
V
CB
= 600V
T
C
= 125°C
I
B
= 0
V
EB
= 5V
I
C
= 0
I
C
= 2A
I
C
= 10A
I
C
= 15A
I
C
= 2A
T
C
= 125°C
V
CE
= 4V
V
CE
= 4V
V
CE
= 4V
T
C
= 125°C
I
B
= 0.2A
I
B
= 1A
I
B
= 1.5A
I
B
= 1A
I
B
= 1.5A
V
CE
= 4V f =
f = 10MHz
V
CE
= 300V
V
10
100
100
10
100
m
A
m
A
m
A
30
20
15
55
28
20
0.07
0.4
1.2
1.1
1.4
0.2
0.7
1.5
1.3
2
V
V
—
h
FE*
DC Current Gain
V
CE(sat)*
Collector – Emitter Saturation Voltage I
C
= 10A
I
C
= 15A
I
C
= 10A
I
C
= 15A
I
C
= 100
10MHz
V
CB
= 20V
V
BE(sat)*
Base – Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
f
t
C
ob
Transition Frequency
Output Capacitance
20
260
MHz
pF
* Pulse test t
p
= 300
m
s ,
d
< 2%
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 4/99
微控制器 MCU
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