High-reliability discrete products
and engineering services since 1977
FEATURES
C106 SERIES
SILICON CONTROLLED RECTIFIERS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive forward and reverse blocking voltage
(R
GK
= 1kΩ, T
J
= -40 to +110°C)
C106Q
C106Y
C106F
C106A
C106B
C106C
C106D
C106E
C106M
Forward current RMS
(all conduction angles)
Average forward current
(T
A
= 30°C)
Peak non-repetitive surge current
(1/2 cycle, 60Hz, T
J
= -40 to +110°C)
Circuit fusing considerations
(t = 8.3ms)
Peak gate power
Average gate power
Forward peak gate current
Peak reverse gate voltage
Operating junction temperature range
Storage temperature range
Mounting torque
(2)
(1)
Symbol
Value
Unit
V
RRM
, V
DRM
15
30
50
100
200
300
400
500
600
4
2.55
20
1.65
0.5
0.1
0.2
6
-40 to +110
-40 to +150
6
Volts
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GFM
V
GRM
T
J
T
stg
Amps
Amps
Amps
A
2
s
Watts
Watts
Amps
Volts
°C
°C
In. lb.
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink
contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
ӨJC
R
ӨJA
Maximum
3
75
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
Characteristic
Peak forward or reverse blocking current
(V
AK
= rated V
DRM
or V
RRM
, R
GK
= 1kΩ)
T
J
= 25°C
T
J
= 110°C
Symbol
Min.
Typ.
Max.
Unit
I
DRM,
I
RRM
-
-
-
-
10
100
µA
Rev. 20130118
High-reliability discrete products
and engineering services since 1977
Characteristic
Forward “on” voltage
(I
FM
= 1A peak)
Gate trigger current (continuous dc)
(V
AK
= 6Vdc, R
L
= 100Ω)
(V
AK
= 6Vdc, R
L
= 100Ω, T
C
= -40°C)
Gate trigger voltage (continuous dc)
(V
AK
= 6Vdc, R
L
= 100Ω)
(V
AK
= 6Vdc, R
L
= 100Ω, T
C
= -40°C)
Holding current
(V
D
= 12Vdc, R
GK
= 1kΩ)
T
J
= 25°C
T
J
= -40°C
T
J
= 110°C
Forward voltage application rate
(T
J
= 110°C, R
GK
= 1000Ω, V
D
= rated V
DRM
)
Turn-on time
Turn-off time
C106 SERIES
Symbol
V
TM
-
I
GT
-
-
V
GT
0.4
0.5
Min.
SILICON CONTROLLED RECTIFIERS
Typ.
-
30
75
0.60
0.75
Max.
2.2
200
500
0.8
1.0
Unit
Volts
µA
Volts
I
H
0.3
0.4
0.14
-
-
-
-
-
-
8
1.2
40
3
6
2
-
-
-
mA
dv/dt
t
gt
t
q
V/µs
µs
µs
MECHANICAL CHARACTERISTICS
Case:
Marking:
Polarity:
TO-126
Body painted, alpha-numeric
Cathode band
TO-126
Inches
Min
Max
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.125
0.091
0.097
0.050
0.095
0.015
0.025
0.595
0.655
3° TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
-
Millimeters
Min
Max
10.80
11.050
7.490
7.750
2.410
2.670
0.510
0.660
2.920
3.180
2.310
2.460
1.270
2.410
0.380
0.640
15.110
16.640
3° TYP
3.760
4.010
1.140
1.400
0.640
0.890
3.680
3.940
1.020
-
Rev. 20130118
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
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