LESHAN RADIO COMPANY, LTD.
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
LMSD1819A-RT1G
S-LMSD1819A-RT1G
3
1
Features
•
•
•
•
2
High h
FE
, 210−460
Low V
CE(sat)
, < 0.5 V
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
Machine Model > 400 V
•
We declare that the material of product compliance with
RoHS requirements.
•
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Value
60
50
7.0
100
200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
SC-70/SOT–323
3
COLLECTOR
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
−55 to +150
Unit
mW
°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Ordering Information
Device
LMSD1819A-RT1G
S-LMSD1819A-RT1G
LMSD1819A-RT1G
S-LMSD1819A-RT1G
Marking
ZR
ZR
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LMSD1819A-RT1G , S-LMSD1819A-RT1G
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage (I
E
= 10
mAdc,
I
E
= 0)
Collector-Base Cutoff Current (V
CB
= 20 Vdc, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 10 Vdc, I
B
= 0)
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 2.0 mAdc)
(V
CE
= 2.0 Vdc, I
C
= 100 mAdc)
Collector-Emitter Saturation Voltage (Note 2)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
2. Pulse Test: Pulse Width
≤
300
ms,
D.C.
≤
2%.
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
h
FE2
V
CE(sat)
Min
50
60
7.0
−
−
210
90
−
Max
−
−
−
0.1
0.1
340
−
0.5
Vdc
Unit
Vdc
Vdc
Vdc
mA
mA
−
PD , POWER DISSIPATION (MILLIWATTS)
250
IC, COLLECTOR CURRENT (mA)
200
150
100
50
0
−50
R
qJA
= 833°C/W
60
50
40
30
20
10
0
0
2
4
6
V
CE
, COLLECTOR VOLTAGE (V)
T
A
= 25°C
160
mA
140
mA
120
mA
100
mA
80
mA
60
mA
40
mA
I
B
= 20
mA
8
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Figure 2. I
C
− V
CE
T
A
= 75°C
DC CURRENT GAIN
T
A
= − 25°C
100
T
A
= 25°C
V
CE
= 10 V
VCE , COLLECTOR-EMITTER VOLTAGE (V)
1000
2
T
A
= 25°C
1.5
1
0.5
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
0
0.01
0.1
1
I
B
, BASE CURRENT (mA)
10
100
Figure 3. DC Current Gain
Figure 4. Collector Saturation Region
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LMSD1819A-RT1G , S-LMSD1819A-RT1G
900
800
Cib, INPUT CAPACITANCE (pF)
COLLECTOR VOLTAGE (mV)
700
600
500
400
300
200
100
0
0.2
0.5
1
5
10
20
40
60
80
100
150 200
10
0
1
2
V
EB
(V)
3
4
T
A
= 25°C
V
CE
= 5 V
18
16
14
12
20
I
C
, COLLECTOR CURRENT (mA)
Figure 5. On Voltage
Figure 6. Capacitance
7
6
C ob, CAPACITANCE (pF)
5
4
3
2
1
0
10
20
V
CB
(V)
30
40
Figure 7. Capacitance
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LMSD1819A-RT1G , S-LMSD1819A-RT1G
SC−70 (SOT−323)
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.7 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.425 REF
2.10
2.40
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.017 REF
0.083
H
E
1
2
E
b
e
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
2.00
0.079
0.095
A
0.05 (0.002)
A2
L
c
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
Rev.O 4/4
嵌入式系统
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