MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MTW32N25E/D
™
Data Sheet
TMOS E-FET.
™
Power Field Effect Transistor
TO-247 with Isolated Mounting Hole
Designer's
MTW32N25E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
•
Avalanche Energy Specified
•
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
•
Diode is Characterized for Use in Bridge Circuits
•
IDSS and VDS(on) Specified at Elevated Temperature
•
Isolated Mounting Hole Reduces Mounting Hardware
TMOS POWER FET
32 AMPERES
250 VOLTS
RDS(on) = 0.08 OHM
®
D
G
S
CASE 340K–01, Style 1
TO–247AE
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100°C
Drain Current
— Single Pulse (tp
≤
10
µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25
Ω)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
TJ, Tstg
EAS
600
R
θJC
R
θJA
TL
0.50
40
260
°C/W
°C
Value
250
250
±
20
±
40
32
25
96
250
2.0
– 55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
©
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MTW32N25E
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
µAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
µAdc)
Temperature Coefficient (Negative)
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 32 Adc)
(ID = 16 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
(See Figure 8)
(
(VDS = 200 Vdc, ID = 32 Adc,
Vd ,
Ad ,
VGS = 10 Vdc)
(VDD= 125 Vdc, ID = 32 Adc,
Vd
Ad
VGS = 10 Vdc
Vdc,
RG = 9.1
Ω)
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
trr
(IS = 32 Adc, VGS = 0 Vdc,
Ad ,
Vd ,
(
dIS/dt = 100 A/µs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
LD
LS
—
—
4.5
13
—
—
nH
nH
ta
tb
QRR
—
—
—
—
1.0
0.92
312
220
93
3.6
1.5
—
—
—
—
—
µC
ns
Vdc
—
—
—
—
—
—
—
—
31
133
93
108
97
22
43
41
60
266
186
216
136
—
—
—
nC
ns
(VDS = 25 Vdc, VGS = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
3800
726
183
5350
1020
370
pF
VGS(th)
2.0
—
RDS(on)
VDS(on)
—
—
gFS
11
2.2
—
20
2.6
2.5
—
mhos
—
—
7.0
0.07
4.0
—
0.08
Vdc
mV/°C
Ohm
Vdc
V(BR)DSS
250
—
IDSS
—
—
IGSS
—
—
—
—
10
100
100
nAdc
300
380
—
—
Vdc
mV/°C
µAdc
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
(See Figure 14)
2
Motorola TMOS Power MOSFET Transistor Device Data
MTW32N25E
TYPICAL ELECTRICAL CHARACTERISTICS
64
56
I D , DRAIN CURRENT (AMPS)
48
40
32
24
16
5V
8
0
0
1
4
6
8
3
5
7
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2
9
10
6V
TJ = 25°C
9V
8V
VGS = 10 V
7V
I D , DRAIN CURRENT (AMPS)
64
56
48
40
32
24
16
8
0
2
3
4
5
6
7
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
8
100°C
VDS
≥
10 V
TJ = – 55°C
25°C
Figure 1. On–Region Characteristics
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN–TO–SOURCE RESISTANCE (OHMS)
Figure 2. Transfer Characteristics
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
VGS = 10 V
TJ = 100°C
0.084
TJ = 25°C
0.08
0.076
VGS = 10 V
0.072
15 V
0.068
25°C
– 55°C
0
8
16
32
48
24
40
ID, DRAIN CURRENT (AMPS)
56
64
0.064
0
8
16
32
48
24
40
ID, DRAIN CURRENT (AMPS)
56
64
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
RDS(on) , DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
2.0
VGS = 10 V
ID = 2.0 A
1.6
10000
VGS = 0 V
TJ = 125°C
1000
I DSS , LEAKAGE (nA)
100°C
100
1.2
0.8
10
25°C
0.4
– 50
– 25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
125
150
1
0
150
100
200
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
50
250
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
MTW32N25E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge controlled.
The lengths of various switching intervals (∆t) are deter-
mined by how fast the FET input capacitance can be charged
by current from the generator.
The published capacitance data is difficult to use for calculat-
ing rise and fall because drain–gate capacitance varies
greatly with applied voltage. Accordingly, gate charge data is
used. In most cases, a satisfactory estimate of average input
current (IG(AV)) can be made from a rudimentary analysis of
the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a resis-
tive load, VGS remains virtually constant at a level known as
the plateau voltage, VSGP. Therefore, rise and fall times may
be approximated by the following:
tr = Q2 x RG/(VGG – VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn–on and turn–off delay times, gate current is
not constant. The simplest calculation uses appropriate val-
ues from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG – VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the off–state condition when cal-
culating td(on) and is read at a voltage corresponding to the
on–state when calculating td(off).
At high switching speeds, parasitic circuit elements com-
plicate the analysis. The inductance of the MOSFET source
lead, inside the package and in the circuit wiring which is
common to both the drain and gate current paths, produces a
voltage at the source which reduces the gate drive current.
The voltage is determined by Ldi/dt, but since di/dt is a func-
tion of drain current, the mathematical solution is complex.
The MOSFET output capacitance also complicates the
mathematics. And finally, MOSFETs have finite internal gate
resistance which effectively adds to the resistance of the
driving source, but the internal resistance is difficult to mea-
sure and, consequently, is not specified.
The resistive switching time variation versus gate resis-
tance (Figure 9) shows how typical switching performance is
affected by the parasitic circuit elements. If the parasitics
were not present, the slope of the curves would maintain a
value of unity regardless of the switching speed. The circuit
used to obtain the data is constructed to minimize common
inductance in the drain and gate circuit loops and is believed
readily achievable with board mounted components. Most
power electronic loads are inductive; the data in the figure is
taken with a resistive load, which approximates an optimally
snubbed inductive load. Power MOSFETs may be safely op-
erated into an inductive load; however, snubbing reduces
switching losses.
8000
7000
C, CAPACITANCE (pF)
6000
5000
4000
3000
2000
1000
0
10
VDS = 0 V
Ciss
VGS = 0 V
TJ = 25°C
Crss
Ciss
Crss
5
VGS
0
VDS
5
10
Coss
15
20
25
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
4
Motorola TMOS Power MOSFET Transistor Device Data
MTW32N25E
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
12
QT
10
VGS
8
Q1
6
4
2
Q3
0
0
10
20
30
40
50
VDS
60
70
80
ID = 32 A
TJ = 25°C
90
Q2
150
100
50
0
100
200
250
300
1000
VDD = 125 V
ID = 32 A
VGS = 10 V
TJ = 25°C
t, TIME (ns)
tr
tf
td(off)
td(on)
10
VDS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
1
10
RG, GATE RESISTANCE (OHMS)
100
QT, TOTAL CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
32
VGS = 0 V
TJ = 25°C
I S , SOURCE CURRENT (AMPS)
24
16
8
0
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
0.95
1.0
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
µs.
In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θJC
).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a con-
stant. The energy rating decreases non–linearly with an in-
crease of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
Motorola TMOS Power MOSFET Transistor Device Data
5
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