BF569/BF569R
Silicon PNP Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For selfoscillating RF mixer stages
1
1
13 581
94 9280
9510527
13 581
2
3
3
2
BF569 Marking: LH
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
BF569R Marking: LM
Plastic case (SOT 23)
1= Collector; 2= Base; 3= Emitter
Absolute Maximum Ratings
Parameters
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation T
amb
≤
60°C
Junction temperature
Storage temperature range
Symbol
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
T
j
T
stg
Value
40
35
3
30
200
150
65... 150
Unit
V
V
V
mA
mW
°C
°C
* )
Maximum Thermal Resistance
Parameters
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm
3
plated with 35
m
m Cu
Symbol
R
thJA
Value
450
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A3, 31-Oct-97
1 (5)
BF569/BF569R
Electrical DC Characteristics
T
amb
= 25°C, unless otherwise specified
Parameters / Test Conditions
Collector-emitter cut-off current
–V
CE
= 40 V, V
BE
= 0
Collector-base cut-off current
–V
CB
= 20 V, I
E
= 0
Emitter-base cut-off current
–V
EB
= 2 V, I
C
= 0
Collector-emitter breakdown voltage
–I
C
= 1 mA, I
B
= 0
DC forward current transfer ratio
–V
CE
= 10 V, –I
C
= 3 mA
Symbol
–I
CES
–I
CBO
–I
EBO
–V
(BR)CEO
h
FE
35
25
50
90
Min.
Typ.
Max.
100
100
10
Unit
m
A
nA
m
A
V
Electrical AC Characteristics
T
amb
= 25°C
Parameters / Test Conditions
Transition frequency
–V
CE
= 10 V, –I
C
= 3 mA, f = 300 MHz
Collector-base capacitance
–V
CB
= 10 V, f = 1 MHz
Noise figure
–V
CE
= 10 V, –I
C
= 3 mA, Z
S
= 50
W
Z
L
= 500
W,
f = 800 MHz
Power gain
–V
CE
= 10 V, –I
C
= 3 mA
Z
S
= 50
W
, Z
L
= 500
W,
f = 800 MHz
Symbol
f
T
C
cb
F
Min.
Typ.
1000
0.35
4.2
5.0
Max.
Unit
MHz
pF
dB
G
pb
13
14.5
dB
2 (5)
TELEFUNKEN Semiconductors
Rev. A3, 31-Oct-97
BF569/BF569R
Typical Characteristics
(T
j
= 25
_
C unless otherwise specified)
C
cb
– Collector Base Capacitance ( pF )
0
96 12159
250
P
tot
– Total Power Dissipation ( mW )
200
150
100
50
0
30
60
90
120
150
T
amb
– Ambient Temperature (
°C
)
1.0
0.8
0.6
0.4
0.2
0
0
4
8
12
16
20
–V
CB
– Collector Base Voltage ( V )
12875
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Collector Base Capacitance vs.
Collector Base Voltage
1200
f
T
– Transition Frequency ( MHz )
1000
800
600
400
200
0
0
12847
–V
CB
=10V
f=300MHz
3
6
9
12
15
I
C
– Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
TELEFUNKEN Semiconductors
Rev. A3, 31-Oct-97
3 (5)
BF569/BF569R
Ozone Depleting Substances Policy Statement
It is the policy of
TEMIC TELEFUNKEN microelectronic GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).
The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH
semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC
can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
TELEFUNKEN Semiconductors
Rev. A3, 31-Oct-97
5 (5)
PCB设计
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