INTEGRATED CIRCUITS
74AVC16835
18-bit registered driver (3-State)
Preliminary specification
Replaces datasheet 74AVC16835/74AVCH16835 dated 1998 Dec 07
1999 Jul 23
Philips
Semiconductors
Philips Semiconductors
Preliminary specification
18-bit Registered Driver (3-State)
74AVC16835
FEATURES
•
Wide supply voltage range of 1.2 V to 3.6 V
•
Complies with JEDEC standard no. 8-1A/5/7.
•
CMOS low power consumption
•
Input/output tolerant up to 3.6 V
•
DCO (Dynamic Controlled Output) circuit dynamically changes
output impedance, resulting in noise reduction without speed
degradation
PIN CONFIGURATION
NC
NC
Y
0
GND
Y
1
Y
2
V
CC
Y
3
Y
4
Y
5
GND
Y
6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
GND
NC
A
0
GND
A
1
A
2
V
CC
A
3
A
4
A
5
GND
A
6
A
7
A
8
A
9
A
10
A
11
GND
A
12
A
13
A
14
V
CC
A
15
A
16
GND
A
17
CP
GND
•
Low inductance multiple V
CC
and GND pins for minimum noise
and ground bounce
•
Power off disables 74AVC16835 outputs, permitting Live Insertion
DESCRIPTION
The 74AVC16835 is a 18-bit universal bus driver. Data flow is
controlled by output enable (OE), latch enable (LE) and clock inputs
(CP).
This product is designed to have an extremely fast propagation
delay and a minimum amount of power consumption.
To ensure the high-impedance state during power up or power
down, OE should be tied to V
CC
through a pullup resistor (Live
Insertion).
A Dynamic Controlled Output (DCO) circuitry is implemented to
support termination line drive during transient. See the graphs on
page 8 for typical curves.
Y
7
Y
8
Y
9
Y
10
Y
11
GND
Y
12
Y
13
Y
14
V
CC
Y
15
Y
16
GND
Y
17
OE
LE
SH00130
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25°C; t
r
= t
f
≤
2.0 ns; C
L
= 30 pF.
PARAMETER
SYMBOL
t
PHL
/t
PLH
Propagation delay
An to Yn
Propagation delay
LE to Yn;
CP to Yn
Input capacitance
Power dissipation capacitance per buffer
dissi ation ca acitance er
V
I
= GND to V
CC1
Outputs enabled
Output disabled
V
CC
= 1.8 V
V
CC
= 2.5 V
V
CC
= 3.3 V
V
CC
= 1.8 V
V
CC
= 2.5 V
V
CC
= 3.3 V
CONDITIONS
TYPICAL
2.6
2.0
1.7
2.8
2.2
1.8
5.0
25
6
UNIT
ns
t
PHL
/t
PLH
C
I
C
PD
ns
pF
pF
F
NOTES:
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW):
P
D
= C
PD
×
V
CC2
×
f
i
+
S
(C
L
×
V
CC2
×
f
o
) where: f
i
= input frequency in MHz; C
L
= output load capacitance in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
S
(C
L
×
V
CC2
×
f
o
) = sum of outputs.
ORDERING INFORMATION
PACKAGES
56-Pin Plastic Thin Shrink Small Outline (TSSOP) Type II
TEMPERATURE
RANGE
–40°C to +85°C
ORDER CODE
74AVC16835 DGG
DRAWING
NUMBER
SOT364-1
1999 Jul 23
2
Philips Semiconductors
Preliminary specification
18-bit Registered Driver (3-State)
74AVC16835
PIN DESCRIPTION
PIN NUMBER
1, 2, 55
3, 5, 6, 8, 9, 10, 12, 13,
14, 15, 16, 17, 19, 20,
21, 23, 24, 26
4, 11, 18, 25, 32, 39, 46,
53, 56
7, 22, 35, 50
27
28
30
54, 52, 51, 49, 48, 47,
45, 44, 43, 42, 41, 40,
38, 37, 36, 34, 33, 31
SYMBOL
NC
Y
0
to Y
17
NAME AND FUNCTION
No connection
Data outputs
LOGIC SYMBOL (IEEE/IEC)
OE
CP
LE
27
30
28
C3
G2
EN1
2C3
GND
V
CC
OE
LE
CP
A
0
to A
17
Ground (0V)
Positive supply voltage
Output enable input
(active LOW)
Latch enable input
(active HIGH)
Clock input
Data inputs
Y
0
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
Y
10
Y
11
3
5
6
8
9
10
12
13
14
15
16
17
19
20
21
23
24
26
1
∇
1
3D
54
52
51
49
48
47
45
44
43
42
41
40
38
37
36
34
33
31
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
LOGIC SYMBOL
Y
12
Y
13
Y
14
OE
Y
15
Y
16
CP
Y
17
SH00154
LE
A
0
FUNCTION TABLE
D
LE
CP
Y
0
INPUTS
OE
H
L
L
L
L
SH00138
LE
X
H
H
L
L
L
L
CP
X
X
X
↑
↑
H
L
A
X
L
H
L
H
X
X
OUTPUTS
Z
L
H
L
H
Y
01
Y
02
TO THE 17 OTHER CHANNELS
L
L
H
L
X
Z
↑
=
=
=
=
=
HIGH voltage level
LOW voltage level
Don’t care
High impedance “off” state
LOW-to-HIGH level transition
NOTES:
1. Output level before the indicated steady-state input conditions
were established, provided that CP is high before LE goes low.
2. Output level before the indicated steady-state input conditions
were established.
1999 Jul 23
3
Philips Semiconductors
Preliminary specification
18-bit Registered Driver (3-State)
74AVC16835
168-pin SDR SDRAM DIMM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
BACK SIDE
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
SDRAM
FRONT SIDE
AVC16835
AVC16835
AVC16835
PCK2509S or PCK2510S
The PLL clock distribution device and AVC registered drivers reduce
signal loads on the memory controller and prevent timing delays and
waveform distortions that would cause unreliable operation
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
DC supply voltage
(according to JEDEC Low Voltage Standards)
V
CC
DC supply voltage
(for low voltage applications)
V
I
V
O
T
amb
t
r
, t
f
DC Input voltage range
DC output voltage range; output 3-State
DC output voltage range;
output HIGH or LOW state
Operating free-air temperature range
Input rise and fall times
V
CC
= 1.65 to 2.3 V
V
CC
= 2.3 to 3.0 V
V
CC
= 3.0 to 3.6 V
CONDITIONS
MIN
1.65
2.3
3.0
1.2
0
0
0
–40
0
0
0
MAX
1.95
2.7
3.6
3.6
3.6
3.6
V
V
CC
+85
30
20
10
°C
ns/V
V
UNIT
SDRAM
SW00408
V
1999 Jul 23
4
Philips Semiconductors
Preliminary specification
18-bit Registered Driver (3-State)
74AVC16835
ABSOLUTE MAXIMUM RATINGS
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
V
CC
I
IK
V
I
I
OK
V
O
V
O
I
O
I
GND
, I
CC
T
stg
P
TOT
DC supply voltage
DC input diode current
DC input voltage
DC output diode current
DC output voltage; output 3-State
DC output voltage;
output HIGH or LOW state
DC output source or sink current
DC V
CC
or GND current
Storage temperature range
Power dissipation per package
–plastic thin-medium-shrink (TSSOP)
For temperature range: –40 to +125
°C
above +55°C derate linearly with 8 mW/K
V
I
t0
For all
Note 1
Note 1
V
O
= 0 to V
CC
inputs
1
V
O
uV
CC
or V
O
t
0
CONDITIONS
RATING
–0.5 to +4.6
–50
–0.5 to 4.6
"50
–0.5 to 4.6
–0.5 to V
CC
+0.5
"50
"100
–65 to +150
600
UNIT
V
mA
V
mA
V
V
mA
mA
°C
mW
NOTE:
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
V
CC
= 1.2 V
V
IH
HIGH level Input voltage
In ut
V
CC
= 1.65 to 1.95 V
V
CC
= 2.3 to 2.7 V
V
CC
= 3.0 to 3.6 V
V
CC
= 1.2 V
V
IL
LOW level In ut voltage
Input
V
CC
= 1.65 to 1.95 V
V
CC
= 2.3 to 2.7 V
V
CC
= 3.0 to 3.6 V
V
CC
= 1.65 to 3.6 V; V
I
= V
IH
or V
IL
;
I
O
= –100
µA
V
OH
HIGH level output voltage
V
CC
= 1.65 V; V
I
= V
IH
or V
IL
; I
O
= –4 mA
V
CC
= 2.3 V; V
I
= V
IH
or V
IL
; I
O
= –8 mA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL
; I
O
= –12 mA
V
CC
= 1.65 to 3.6 V; V
I
= V
IH
or V
IL
;
I
O
= 100
µA
V
OL
LOW level output voltage
V
CC
= 1.65 V; V
I
= V
IH
or V
IL
; I
O
= 4 mA
V
CC
= 2.3 V; V
I
= V
IH
or V
IL
; I
O
= 8 mA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL
; I
O
= 12 mA
I
I
I
OFF
I
IHZ
/I
ILZ
I
OZ
Input leakage current
g
3-State output OFF-state current
3-State output OFF-state current
V
CC
= 1.65 to 3.6 V
1 65 3 6 V;
V
I
= V
CC
or GND
V
CC
= 0 V; V
I
or V
O
= 3.6 V
V
CC
= 1.65 to 3.6 V; V
I
= V
CC
or GND
V
CC
= 1.65 to 2.7 V; V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
V
CC
= 3.0 to 3.6 V; V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
V
CC
= 1.65 to 2.7 V; V
I
= V
CC
or GND; I
O
= 0
V
CC
= 3.0 to 3.6 V; V
I
= V
CC
or GND; I
O
= 0
TEST CONDITIONS
Temp = -40°C to +85°C
MIN
V
CC
0.65V
CC
1.7
2.0
–
–
–
–
V
CC
*0
20
*0.20
V
CC*
0.45
V
CC*
0.55
V
CC*
0.70
–
–
–
–
–
–
–
–
–
–
–
TYP
1
–
0.9
1.2
1.5
–
0.9
1.2
1.5
V
CC
V
CC*
0.10
V
CC*
0.28
V
CC*
0.32
GND
0.10
0.26
0.36
0.1
0.1
0.1
0.1
0.1
0.1
0.2
MAX
–
–
–
–
GND
0.35V
CC
0.7
0.8
–
–
–
–
0 20
0.20
0.45
0.55
0.70
2.5
"10
12.5
5
µA
10
20
40
µA
µ
µA
µA
µA
V
V
V
V
UNIT
out ut
3-State output OFF-state current
I
CC
Quiescent su ly current
supply
NOTES:
1. All typical values are at T
amb
= 25°C.
1999 Jul 23
5
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