INTEGRATED CIRCUITS
DATA SHEET
74AHCU04
Hex inverter
Product specification
Supersedes data of 1999 Feb 26
File under Integrated Circuits, IC06
1999 Sep 27
Philips Semiconductors
Product specification
Hex inverter
FEATURES
•
ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
•
Balanced propagation delays
•
All inputs have Schmitt-trigger
actions
•
Inputs accepts voltages higher than
V
CC
•
Specified from
−40
to +85 and +125
°C.
DESCRIPTION
The 74AHCU04 is high-speed Si-gate
CMOS devices and is pin compatible
with low power Schottky TTL
(LSTTL). It is specified in compliance
with JEDEC standard No. 7A.
The 74AHCU04 is a general purpose
hex inverter. Each of the six inverters
is a single stage.
FUNCTION TABLE
See note 1.
INPUT nA
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT nY
H
L
Notes
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
SYMBOL
t
PHL
/t
PLH
C
I
C
O
C
PD
PARAMETER
propagation delay
nA to nY
input capacitance
output capacitance
power dissipation
capacitance
C
L
= 50 pF;
f = 1 MHz;
notes 1 and 2
CONDITIONS
C
L
= 15 pF;
V
CC
= 5 V
V
I
= V
CC
or GND
74AHCU04
TYPICAL
1.5
3.0
4.0
9.1
UNIT
ns
pF
pF
pF
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
PINNING
PIN
1, 3, 5, 9, 11 and 13
2, 4, 6, 8, 10 and 12
7
14
SYMBOL
1A to 6A
1Y to 6Y
GND
V
CC
DESCRIPTION
data inputs
data outputs
ground (0 V)
DC supply voltage
1999 Sep 27
2
Philips Semiconductors
Product specification
Hex inverter
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
74AHCU04D
74AHCU04PW
PACKAGES
NORTH AMERICA
PINS
74AHCU04D
74AHC04PW DH
14
14
PACKAGE
SO
TSSOP
MATERIAL
plastic
plastic
74AHCU04
CODE
SOT108-1
SOT402-1
handbook, halfpage
1A
1Y
2A
2Y
3A
3Y
GND
1
2
3
4
5
6
7
MNA345
14 VCC
13 6A
12 6Y
handbook, halfpage
VCC VCC
U04
11 5A
10 5Y
9
4A
100
Ω
nA
nY
MNA346
8 4Y
Fig.1 Pin configuration.
Fig.2 Schematic diagram (one inverter).
handbook, halfpage
1
handbook, halfpage
1
2
1
1A
1Y
2
3
1
4
3
2A
2Y
4
5
1
6
5
3A
3Y
6
9
4A
4Y
8
9
1
8
11
5A
5Y
10
11
1
10
13
6A
6Y
12
13
1
MNA348
12
MNA347
Fig.3 Functional diagram.
Fig.4 IEC logic symbol.
1999 Sep 27
3
Philips Semiconductors
Product specification
Hex inverter
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient temperature range see DC and AC characteristics per
device
V
CC
= 3.3 V
±0.3
V
V
CC
= 5 V
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−40
−
−
74AHCU04
TYP. MAX. UNIT
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
100
20
V
V
V
°C
ns/V
+125
°C
t
r
,t
f
(∆t/∆f) input rise and fall rates
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70
°C
the value of P
D
derates linearly with 8 mW/K.
For TSSOP packages: above 60
°C
the value of P
D
derates linearly with 5.5 mW/K.
PARAMETER
DC supply voltage
input voltage range
DC input diode current
DC output diode current
DC output source or sink current
DC V
CC
or GND current
storage temperature range
power dissipation per package
for temperature range:
−40
to +125
°C;
note 2
V
I
<
−0.5
V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
500
V
V
mA
mA
mA
mA
mW
+150
°C
1999 Sep 27
4
Philips Semiconductors
Product specification
Hex inverter
DC CHARACTERISTICS
Over recommended operating conditions; voltage are referenced to GND (ground = 0 V).
TEST CONDITIONS
SYMBOL
PARAMETER
OTHER
V
IH
HIGH-level input
voltage
V
CC
(V)
2.0
3.0
5.5
V
IL
LOW-level input
voltage
2.0
3.0
5.5
V
OH
HIGH-level output V
I
= V
IH
or V
IL
;
voltage; all outputs I
O
=
−50 µA
HIGH-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
=
−4.0
mA
V
I
= V
IH
or V
IL
;
I
O
=
−8.0
mA
V
OL
LOW-level output V
I
= V
IH
or V
IL
;
voltage; all outputs I
O
= 50
µA
LOW-level output
voltage
V
I
= V
IH
or V
IL
;
I
O
= 4 mA
V
I
= V
IH
or V
IL
;
I
O
= 8 mA
I
I
I
OZ
I
CC
C
I
input leakage
current
3-state output
OFF current
quiescent supply
current
input capacitance
V
I
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
5.5
−
−
−
−
−
−
2.0
3.0
4.5
25
−
−
−
0.3
0.6
1.1
−
−
−
−
−
0.2
0.3
0.5
0.36
0.36
0.1
T
amb
(°C)
−40
to +85
−
−
−
0.3
0.6
1.1
−
−
−
74AHCU04
−40
to +125 UNIT
−
−
−
0.3
0.6
1.1
−
−
−
−
−
0.2
0.3
0.5
0.55
0.55
2.0
µA
V
V
V
V
V
MIN. TYP. MAX. MIN. MAX. MIN. MAX.
1.7
2.4
4.4
−
−
−
1.8
2.7
4.0
1.7
2.4
4.4
−
−
−
1.8
2.7
4.0
1.7
2.4
4.4
−
−
−
1.8
2.7
4.0
2.40
3.7
−
−
−
−
−
−
−
−
−
V
2.58
−
3.94
−
−
−
−
−
−
−
−
−
−
0
0
0
−
−
−
−
−
3
2.48
−
3.8
−
−
−
−
−
−
−
0.2
0.3
0.5
0.44
0.44
1.0
±2.5
20
10
V
I
= V
IH
or V
IL
;
5.5
V
O
= V
CC
or GND
V
I
= V
CC
or GND;
I
O
= 0
5.5
±0.25 −
2.0
10
−
−
±10.0 µA
40
10
µA
pF
1999 Sep 27
5
传感器
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