INTEGRATED CIRCUITS
DATA SHEET
74AHC244; 74AHCT244
Octal buffer/line driver; 3-state
Product specification
Supersedes data of 1999 Feb 24
File under Integrated Circuits, IC06
1999 Sep 28
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
FEATURES
•
ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V
MM EIA/JESD22-A115-A
exceeds 200 V
CDM EIA/JESD22-C101
exceeds 1000 V
•
Balanced propagation delays
•
All inputs have a Schmitt-trigger
action
•
Inputs accepts voltages higher than
V
CC
•
For AHC only:
operates with CMOS input levels
•
For AHCT only:
operates with TTL input levels
•
Specified from
−40
to +85 and +125
°C.
DESCRIPTION
The 74AHC/AHCT244 is a
high-speed Si-gate CMOS device.
The 74AHC/AHCT244 is an octal
non-inverting buffer/line driver with
3-state outputs.
The 3-state outputs are controlled by
the outputs enable inputs 1OE and
2OE.
A HIGH on nOE causes the outputs to
assume a high-impedance OFF state.
C
I
C
O
C
PD
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF state.
FUNCTION TABLE
See note 1.
INPUTS
nOE
L
L
H
74AHC244; 74AHCT244
OUTPUT
nA
n
L
H
X
nY
n
L
H
Z
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
TYPICAL
SYMBOL
t
PHL
/t
PLH
PARAMETER
propagation delay
1A
n
to 1Y
n
;
2A
n
to 2Y
n
input capacitance
output capacitance
power dissipation
capacitance
C
L
= 50 pF;
f = 1 MHz;
notes 1 and 2
CONDITIONS
AHC
C
L
= 15 pF;
V
CC
= 5 V
V
I
= V
CC
or GND
3.5
AHCT
5.0
ns
UNIT
3.5
4.0
10
3.5
4.0
12
pF
pF
pF
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
1999 Sep 28
2
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
PINNING
PIN
1
2, 4, 6 and 8
3, 5, 7 and 9
10
11, 13, 15 and 17
12, 14, 16 and 18
19
20
ORDERING INFORMATION
OUTSIDE NORTH
AMERICA
74AHC244D
74AHC244PW
74AHCT244D
74AHCT244PW
1OE
1A
0
to 1A
3
2Y
0
to 2Y
3
GND
2A
3
to 2A
0
1Y
3
to 1Y
0
2OE
V
CC
SYMBOL
74AHC244; 74AHCT244
DESCRIPTION
output enable input (active LOW)
data inputs
bus outputs
ground (0 V)
data inputs
data outputs
output enable input (active LOW)
DC supply voltage
PACKAGES
NORTH AMERICA
PINS
74AHC244D
74AHC244PW DH
74AHCT244D
7AHCT244PW DH
20
20
20
20
PACKAGE
SO
TSSOP
SO
TSSOP
MATERIAL
plastic
plastic
plastic
plastic
CODE
SOT163-1
SOT360-1
SOT163-1
SOT360-1
1999 Sep 28
3
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
74AHC244; 74AHCT244
handbook, halfpage
1OE 1
1A0 2
2Y0 3
1A1 4
2Y1 5
1A2 6
2Y2 7
1A3 8
2Y3 9
GND 10
MNA162
20 VCC
19 2OE
18 1Y0
17 2A0
16 1Y1
244
15 2A1
14 1Y2
13 2A2
12 1Y3
11 2A3
Fig.1 Pin configuration.
handbook, halfpage
2
1A0
1Y0
18
4
handbook, halfpage
1A1
1Y1
16
1
EN
6
1A2
1Y2
14
18
16
8
14
12
1
1OE
1A3
1Y3
12
2
4
6
8
19
EN
9
7
5
3
MNA169
17
2A0
2Y0
3
11
13
15
17
15
2A1
2Y1
5
13
2A2
2Y2
7
11
19
2A3
2OE
2Y3
9
MNA170
Fig.2 IEEE/IEC logic symbol.
Fig.3 Logic diagram.
1999 Sep 28
4
Philips Semiconductors
Product specification
Octal buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74AHC244; 74AHCT244
74AHC
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient temperature
range
see DC and AC
characteristics per
device
V
CC
= 5 V
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−40
TYP. MAX. MIN.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
4.5
0
0
−40
74AHCT
UNIT
TYP. MAX.
5.0
−
−
+25
+25
−
−
5.5
5.5
V
CC
+85
V
V
V
°C
+125
−40
100
20
−
−
+125
°C
−
20
ns/V
t
r
,t
f
(∆t/∆f) input rise and fall rates
V
CC
= 3.3 V
±0.3
V
−
−
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO packages: above 70
°C
the value of P
D
derates linearly with 8 mW/K.
For TSSOP packages: above 60
°C
the value of P
D
derates linearly with 5.5 mW/K.
PARAMETER
DC supply voltage
input voltage range
DC input diode current
DC output diode current
DC V
CC
or GND current
storage temperature range
power dissipation per package
for temperature range:
−40
to +125
°C;
note 2
V
I
<
−0.5
V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
500
V
V
mA
mA
mA
mA
mW
DC output source or sink current
−0.5
V < V
O
< V
CC
+ 0.5 V
+150
°C
1999 Sep 28
5
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