Philips Semiconductors
Product specification
Single D-type flip-flop; positive-edge trigger
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V;
MM EIA/JESD22-A115-A
exceeds 200 V
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5 pin package
•
Output capability: standard.
DESCRIPTION
The 74AHC1G/AHCT1G79 is a
high-speed Si-gate CMOS device.
The 74AHC1G/AHCT1G79 provides
a single positive-edge triggered
D-type flip-flop.
Information on the data input is
transferred to the Q output on the
LOW-to-HIGH transition of the clock
pulse. The D input must be stable one
set-up time prior to the LOW-to-HIGH
clock transition for predictable
operation.
FUNCTION TABLE
See note 1.
INPUTS
CP
↑
↑
L
Note
1. H = HIGH voltage level;
L = LOW voltage level;
↑
= LOW-to-HIGH CP transition;
X = don’t care;
Q + 1 = state after the next
LOW-to-HIGH CP transition.
D
L
H
X
OUTPUT
Q+1
L
H
Q
Notes
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G79;
74AHCT1G79
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
propagation delay
CP to Q
input capacitance
power dissipation
capacitance
CONDITIONS
AHC1G
C
L
= 15 pF;
V
CC
= 5 V
3.5
1.5
notes 1 and 2; 15
C
L
= 50 pF;
f = 1 Mhz
AHCT1G
3.5
1.5
16
ns
pF
pF
UNIT
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V.
2. The condition is V
I
= GND to V
CC
.
PINNING
PIN
1
2
3
4
5
SYMBOL
D
CP
GND
Q
V
CC
data input
clock pulse input
ground (0 V)
data output
DC supply voltage
DESCRIPTION
1999 May 18
2
Philips Semiconductors
Product specification
Single D-type flip-flop; positive-edge trigger
RECOMMENDED OPERATING CONDITIONS
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
DC supply voltage
input voltage
output voltage
operating ambient
temperature range
input rise and fall times
except for
Schmitt-trigger inputs
see DC and AC
characteristics per
device
V
CC
= 3.3 V
±0.3
V
V
CC
= 5 V
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+85
MIN.
4.5
0
0
−40
74AHC1G79;
74AHCT1G79
74AHCT1G
UNIT
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+85
V
V
V
°C
t
r
, t
f
(∆t/∆f)
−
−
−
−
100
20
−
−
−
−
−
20
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C
the value of P
D
derates linearly with 2.5 mW/K.
PARAMETER
DC supply voltage
input voltage range
DC input diode current
DC output diode current
DC output source or sink current
DC V
CC
or GND current
storage temperature
power dissipation per package
temperature range:
−40
to +85
°C;
note 2
V
I
<
−0.5
V
O
<
−0.5
or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
−
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
200
UNIT
V
V
mA
mA
mA
mA
°C
mW
1999 May 18
4
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