Glass passivated thyristors in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional blocking voltage capability and high thermal
cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching
.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Value
BT151-500R BT151-650R BT151-800R
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
P
GM
PG
(AV)
T
stg
T
j
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
RMS on-state current
Average
on-state
current
Non-repetitive peak on-
state current
Peak gate power
Average gate power
Storage
temperature
range
Operating
junction
temperature
500
500
650
650
12
7.5
100
5
0.5
-45 to +150
110
800
V
800
A
A
A
W
W
°C
°C
Symbol
Ratings
Unit
THERMAL CHARACTERISTICS
Symbol
R
∂j-mb
R
∂JA
Ratings
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
Value
≤
1.3
≤
60
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
1|3
SEMICONDUCTORS
BT151 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
DRM
V
RRM
I
GT
V
GT
I
L
I
H
I
D
I
R
V
T
Ratings
Repetitive peak
off-state voltage
Repetitive peak reverse
voltage
Gate trigger current
Gate trigger voltage
Latching current
Holding current
Off-state current
Reverse current
On-state voltage
Test Condition(s)
BT151-500R
BT151-650R
BT151-800R
BT151-500R
BT151-650R
BT151-800R
V
D
= 12 V; I
T
= 100 mA
V
D
= 12 V; I
T
= 100 mA
V
D
= 12 V; I
GT
= 100 mA
V
D
= 12 V; I
GT
= 100 mA
V
D
= V
DRM max;
T
j
= 125°C
V
R
= V
RRM max;
T
j
= 125°C
I
T
= 23 A
Min
500
650
800
500
650
800
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
-
15
1.5
40
20
0.5
0.5
1.75
Unit
V
mA
V
mA
mA
mA
mA
V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
V
DM
= 67% V
DRMmax
; T
j
= 125°C
Exponential waveform; gate
open circuit
V
DM
= 67% V
DRMmax
; T
j
= 125°C
Exponential waveform
R
GK
= 100
Ω
I
TM
= 40 A; V
D
= V
DRMmax
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
V
DM
= 67% V
DRMmax
; T
j
= 125°C
I
TM
= 20 A; V
R
= 25 V
R
GK
= 100
Ω
dI
TM
/dt = 30 A/µs
dV
D
/dt = 50 V/µS
Min
50
200
-
Typ
130
1000
2
Max
-
-
-
Unit
V/µs
V/µs
µs
dV
D
/dt
Critical rate of rise of
off-state voltage
Gate controlled
turn-on time
Circuit commutated
Turn-off time
t
gt
t
q
-
70
-
µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
SEMICONDUCTORS
BT151 Series
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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