INTEGRATED CIRCUITS
DATA SHEET
74AHC1G04; 74AHCT1G04
Inverter
Product specification
Supersedes data of 1999 Jan 27
File under Integrated Circuits, IC06
2001 Jan 31
Philips Semiconductors
Product specification
Inverter
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G04; 74AHCT1G04
DESCRIPTION
The 74AHC1G/AHCT1G04 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G04 provides the inverting buffer.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC.
FUNCTION TABLE
See note 1.
INPUT
A
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
OUTPUT
Y
H
L
PARAMETER
propagation delay A to Y
input capacitance
power dissipation capacitance
notes 1 and 2; C
L
= 50 pF;
f = 1 MHz
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
3.1
1.5
15
AHCT1G
3.4
1.5
16
ns
pF
pF
UNIT
2001 Jan 31
2
Philips Semiconductors
Product specification
Inverter
RECOMMENDED OPERATING CONDITIONS
74AHC1G04; 74AHCT1G04
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
see DC and AC
characteristics per
device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+85
MIN.
4.5
0
0
−40
74AHCT1G
UNIT
TYP.
5.0
−
−
+25
MAX.
5.5
5.5
V
CC
+85
V
V
V
°C
t
r
,t
f
(∆t/∆f) input rise and fall times
−
−
−
−
100
20
−
−
−
−
−
20
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C
the value of P
D
derates linearly with 2.5 mW/K.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package
V
I
<
−0.5
V
V
O
<
−0.5
or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN.
−0.5
−0.5
−
−
−
−
−65
for temperature range from
−40
to +85
°C; −
note 2
MAX.
+7.0
+7.0
−20
±20
±25
±75
+150
200
UNIT
V
V
mA
mA
mA
mA
°C
mW
2001 Jan 31
4
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