REVISIONS
LTR
A
B
C
D
DESCRIPTION
Changes to tests TPPos1, TPPos2, TPPos3, TPPos4, TPPos5, TPPos6,
TCCS, and TCIP in table I. -rrp
Add device type 02. Editorial changes throughout. - drw
Change radiation feature for device type 02. - drw
Redraw. Corrections to figure 1. Editorial changes throughout. - drw
DATE (YR-MO-DA)
02-06-13
03-06-18
03-10-27
12-02-08
APPROVED
Raymond Monnin
Raymond Monnin
Raymond Monnin
Charles F. Saffle
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
D
15
D
16
D
17
D
18
REV
SHEET
PREPARED BY
Dan Wonnell
D
19
D
20
D
21
D
1
D
22
D
2
D
23
D
3
D
24
D
4
D
25
D
5
D
6
D
7
D
8
D
9
D
10
D
11
D
12
D
13
D
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
Raymond Monnin
APPROVED BY
Raymond Monnin
DRAWING APPROVAL DATE
02-05-23
REVISION LEVEL
D
SIZE
A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, LINEAR, SERIALIZER,
MONOLITHIC SILICON
AMSC N/A
CAGE CODE
67268
SHEET
1 OF 25
5962-01534
DSCC FORM 2233
APR 97
5962-E094-12
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
01534
01
Q
X
A
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device types. The device types identify the circuit function as follows:
Device type
01
02
Generic number
UT54LVDS217
UT54LVDS217
Circuit function
50 MHz Serializer
75 MHz Serializer
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline. The case outline are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1
Terminals
48
Package style
Flatpack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-01534
SHEET
D
2
1.3 Absolute maximum ratings. 1/
Supply voltage (V
DD
) ........................................................................................
Voltage on any pin (V
I/O
) ..................................................................................
Storage temperature (T
STG
)..............................................................................
Power dissipation (P
D
) .....................................................................................
Junction temperature (T
J
) 3/...........................................................................
Thermal resistance, junction-to-case (θ
JC
) 4/ .................................................
DC input current (I
I
) ..........................................................................................
1.4 Recommended operating conditions.
Supply voltage (V
DD
) ........................................................................................ 3.0 V dc to 3.6 V dc
Case temperature range (T
C
) ........................................................................... -55°C to +125°C
Input voltage (V
IN
) ............................................................................................ 0 V dc to V
DD
1.5 Radiation features.
Maximum total dose available (dose rate = 1 rad(Si)/s):
Device type 01 ..............................................................................................
Device type 02 ..............................................................................................
Neutron irradiation ...........................................................................................
Single event latchup.........................................................................................
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
-0.3 V dc to 4.0 V dc
-0.3 V dc to (V
DD
+ 0.3 V dc) 2/
-65°C to +150°C
2W
+150°C
10°C/W
±10
mA
100krad (Si)
1Mrad (Si)
13
2
1 X 10 neutrons/cm 5/
2
>100 MeV –cm /mg
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ For cold spare mode (V
DD
= V
SS
), V
I/O
may be –0.3 V to the maximum recommended operating V
DD
+ 0.3 V.
3/ Maximum junction temperature may be increased to +175°C during burn-in and life test.
4/ Test per MIL-STD-883, method 1012.
5/ Guaranteed, but not tested.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-01534
SHEET
D
3
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-
PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-01534
SHEET
D
4
TABLE I. Electrical performance characteristics.
Conditions 1/, 2/
-55°C
≤
T
C
≤
+125°C
V
DD
= 3.3 V –0.3 V
unless otherwise specified
CMOS/TTL DC SPECIFICATIONS
High-level input voltage
Low-level input voltage
High-level input current
Low-level Input current
Input clamp voltage
Cold spare leakage current
V
IH
V
IL
I
IH
I
IL
V
CL
I
CS
V
IN
= 3.6 V, V
DD
= 3.6 V
V
IN
= 0 V, V
DD
= 3.6 V
I
CL
= -18 mA
V
IN
= 3.6 V, V
DD
= V
SS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
01, 02
01, 02
01, 02
01, 02
01, 02
01, 02
-20
2.0
GND
-10
-10
V
DD
0.8
+10
+10
-1.5
+20
V
V
µA
µA
V
µA
Test
Symbol
Group A
subgroups
Device
type
Min
Limits
Max
Unit
LVDS OUTPUT DC SPECIFICATIONS (OUT+, OUT-)
Differential output voltage
Change in V
OD
between
complementary output
states
Offset voltage
Change in V
OS
between
complementary output
states
Output three-state current
Output cold spare leakage
current
Output short circuit current
SUPPLY CURRENT
Transmitter supply current
with loads
Power down current
I
CCL
I
CCZ
R
L
= 100 all channels
C
L
= 5 pF, f = 50 MHz 4/
D
IN
= V
DD
or V
SS
4/, 7/
PWR DWN = 0 V, f = 0 Hz
1, 2, 3
1, 2, 3
01, 02
01, 02
65.0
60.0
mA
µA
V
OD
∆V
OD
V
OS
∆V
OS
I
OZ
I
CSOUT
I
OS
R
L
= 100Ω, 3/
R
L
= 100Ω, 3/
R
L
= 100Ω,
V
OS
= (V
oh
+ V
ol
)/2, 3/
R
L
= 100Ω, 3/
PWR DWN = 0 V,
V
OUT
= 0 V or V
DD
4/
V
IN
= 3.6 V, V
DD
= V
SS
V
OUT
= 0 V 5/, 6/
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
01, 02
01, 02
01, 02
01, 02
01, 02
01, 02
01, 02
-10
-20
1.120
250
400
35
1.410
35
+10
+20
5.0
mV
mV
V
mV
µA
µA
mA
AC SWITCHING CHARACTERISTICS
LVDS low-to-high transition
time
LVDS high-to-low transition
time
Transmitter output pulse
position for bit 0
Transmitter output pulse
position for bit 1
LLHT
LHLT
TPPos0
See figure 3, 6/
See figure 3, 6/
f = 50 MHz, see figure 5, 6/
f = 75 MHz, see figure 5, 6/
TPPos1
f = 50 MHz, see figure 5, 6/
f = 75 MHz, see figure 5, 6/
See footnotes at end of table.
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
01, 02
01, 02
01
02
01
02
0.08
-0.18
2.94
1.72
1.5
1.5
0.53
0.27
3.39
2.17
ns
ns
ns
ns
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-01534
SHEET
D
5
51单片机
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