Philips Semiconductors
Product specification
Bilateral switches
FEATURES
•
Wide supply voltage range from 2.0 V to 9.0 V
•
Very low ON-resistance:
– 41
Ω
(typical) at V
CC
= 4.5 V
– 30
Ω
(typical) at V
CC
= 6.0 V
– 21
Ω
(typical) at V
CC
= 9.0 V.
•
High noise immunity
•
Low power dissipation
• ±
25 mA switch current
•
SOT505-2 package
•
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V.
•
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C.
DESCRIPTION
74HC2G66; 74HCT2G66
The 74HC2G66/74HCT2G66 is a high-speed Si-gate
CMOS device.
The 74HC2G66/74HCT2G66 provides a dual analog
switch. Each switch has two pins (nY and nZ) for input or
output and an active HIGH enable input (pin E). When
pin E is LOW, the belonging analog switch is turned off.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
= 6.0 ns; V
os
is the output voltage at pins nY or nZ, whichever is assigned as an output.
TYPICAL
SYMBOL
t
PZH
/t
PZL
t
PHZ
/t
PLZ
C
I
C
PD
C
S
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
+C
S
)
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
C
S
= Switch capacitance in pF;
V
CC
= supply voltage in Volts.
2. For 74HC2G66 the condition is V
I
= GND to V
CC
.
For 74HCT2G66 the condition is V
I
= GND to V
CC
−
1.5 V.
PARAMETER
turn-on time nE to V
os
turn-off time nE to V
os
input capacitance
power dissipation capacitance per switch notes 1 and 2
switch capacitance
CONDITIONS
HC2G
C
L
= 50 pF; R
L
= 1 kΩ; V
CC
= 4.5 V 12
C
L
= 50 pF; R
L
= 1 kΩ; V
CC
= 4.5 V 12
3.5
9
8
HCT2G
13
13
3.5
9
8
ns
ns
pF
pF
pF
UNIT
2004 May 19
2
Philips Semiconductors
Product specification
Bilateral switches
FUNCTION TABLE
See note 1.
INPUT nE
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
74HC2G66DP
74HCT2G66DP
PINNING
PIN
1
2
3
4
5
6
7
8
1Y
1Z
2E
GND
2Y
2Z
1E
V
CC
SYMBOL
independent input or output
independent input or output
enable input (active HIGH)
ground (0 V)
independent input or output
independent input or output
enable input (active HIGH)
supply voltage
TEMPERATURE
RANGE
−40 °C
to +125
°C
−40 °C
to +125
°C
PINS
8
8
PACKAGE
TSSOP8
TSSOP8
74HC2G66; 74HCT2G66
SWITCH
OFF
ON
MATERIAL
plastic
plastic
OUTLINE
VERSION
SOT505-2
SOT505-2
MARKING
H66
T66
DESCRIPTION
handbook, halfpage
handbook, halfpage
1Y 1
1Z 2
8
7
VCC
1E
2Z
1Y
1E
2Z
1Z
66
2E 3
GND 4
MNB002
6
5
2Y
2E
MNB003
2Y
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2004 May 19
3
Philips Semiconductors
Product specification
Bilateral switches
74HC2G66; 74HCT2G66
handbook, halfpage
1
7 #
X1
5
3 #
1
1
2
handbook, halfpage
nZ
1
X1
1
MNB004
6
nE
GND
nY
MNB005
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS
74HC2G66
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
ambient
temperature
CONDITIONS
MIN.
2.0
0
0
see DC and AC
−40
characteristics per device
−
−
−
−
TYP.
5.0
−
−
+25
−
6.0
−
−
MAX.
10.0
V
CC
V
CC
+125
1000
500
400
250
MIN.
4.5
0
0
−40
−
−
−
−
TYP.
5.0
−
−
+25
−
6.0
−
−
MAX.
5.5
V
CC
V
CC
+125
−
500
−
−
V
V
V
°C
ns
ns
ns
ns
74HCT2G66
UNIT
input rise and fall V
CC
= 2.0 V
times
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 9.0 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
tot
P
s
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation of package
power dissipation per switch
T
amb
=
−40 °C
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V; note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
−
MAX.
+11.0
±20
±20
±25
±30
+150
300
100
UNIT
V
mA
mA
mA
mA
°C
mW
mW
2004 May 19
4
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