LHWE) and Output Enable (G); 17 address inputs, A(16:0); and
32 bidirectional data lines, DQ(15:0). E1 and E2 device enables
control device selection, active, and standby modes. Asserting
E1 and E2 enables the device, causes I
DD
to rise to its active
value, and decodes the 17 address inputs to select one of 131,072
words in the memory. W controls read and write operations.
During a read cycle, G must be asserted to enable the outputs.
Table 1. Device Operation Truth Table
G
X
W
X
E2
X
E1
H
LHWE
X
HHWE
X
I/O Mode
DQ(31:16)
3-State
DQ(15:0)
3-State
DQ(31:16)
3-State
DQ(15:0)
3-State
DQ(31:16)
3-State
DQ(15:0)
Data Out
DQ(31:16)
Data Out
DQ(15:0)
3-State
DQ(31:16)
Data Out
DQ(15:0)
Data Out
DQ(31:16)
Data In
DQ(15:0)
Data In
DQ(31:16)
3-State
DQ(15:0)
Data In
DQ(31:16)
Data In
DQ(15:0)
3-State
DQ(31:16)
DQ(15:0)
All 3-State
DQ(31:16)
DQ(15:0)
All 3-State
Mode
Standby
X
X
L
X
X
X
Standby
Figure 2. 15ns SRAM Pinout (68)
L
H
H
L
L
H
Low Half-Word
Read
PIN NAMES
L
H
H
L
H
L
A(16:0)
DQ(31:0)
E1
E2
HHWE
LWHE
Address
Data Input/Output
Enable (Active Low)
Enable (Active High)
High half-word enable
Low half-word enable
W
G
V
DD1
V
DD2
V
SS
Write Enable
Output Enable
L
H
H
L
L
L
High Half-Word
Read
Word Read
Power (1.8V)
Power (3.3V)
Ground
X
L
H
L
L
H
X
L
H
L
L
L
Word Write
Low Half-Word
Write
X
L
H
L
H
L
High Half-Word
Write
H
H
H
L
X
X
3-State
X
X
H
L
H
H
3-State
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
2
READ CYCLE
A combination of W and E2 greater than V
IH
(min) and E1 less
than V
IL
(max) defines a read cycle. Read access time is
measured from the latter of device enable, output enable, or
valid address to valid data output.
SRAM Read Cycle 1, the Address Access in Figure 3a, is
initiated by a change in address inputs while the chip is enabled
with G asserted and W deasserted. Valid data appears on data
outputs DQ(31:0) after the specified t
AVQV
is satisfied. Outputs
remain active throughout the entire cycle. As long as device
enable and output enable are active, the address inputs may
change at a rate equal to the minimum read cycle time (t
AVAV
).
SRAM Read Cycle 2, the Chip Enable-controlled Access in
Figure 3b, is initiated by the latter of E1 and E2 going active
while G remains asserted, W remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ETQV
is satisfied, the 32-bit word addressed by A(16:0) is
accessed and appears at the data outputs DQ(31:0).
SRAM Read Cycle 3, the Output Enable-controlled Access in
Figure 3c, is initiated by G going active while E1 and E2 are
asserted, W is deasserted, and the addresses are stable. Read
access time is t
GLQV
unless t
AVQV
or t
ETQV
have not been
satisfied.
the sixteen bidirectional pins DQ(31:0) to avoid bus
contention.
WORD ENABLES
Separate half-word enable controls (LHWE and HHWE) allow
individual 16-bit word accesses. LHWE controls the lower bits
DQ(15:0). HHWE controls the upper bits DQ(31:16). Writing
to the device is performed by asserting E1, E2 and the half-
word enables. Reading the device is performed by asserting
E1, E2, G, and the half-word enables while W is held inactive
(HIGH).
HHWE
0
0
LHWE
0
1
OPERATION
32-bit read or write cycle
16-bit high half-word read or write
cycle (low half-word bi-direction
pins DQ(15:0) are in 3 -state)
16-bit low half-word read or write
cycle (high half-word bi-direction
pins DQ(31:16) are in 3 -state)
High and low half-word bi-
directional pins remain in 3-state,
write function disabled
1
0
1
1
RADIATION HARDNESS
Write Cycle
A combination of W and E1 less than V
IL
(max) and E2 greater
than V
IH
(min) defines a write cycle. The state of G is a “don’t
care” for a write cycle. The outputs are placed in the high-
impedance state when either G is greater than V
IH
(min), or
when W is less than V
IL
(max).
Write Cycle 1, the Write Enable-controlled Access in Figure
4a, is defined by a write terminated by W going high, with E1
and E2 still active. The write pulse width is defined by t
WLWH
when the write is initiated by W, and by t
ETWH
when the write
is initiated by E1 or E2. Unless the outputs have been
previously placed in the high-impedance state by G, the user
must wait user must wait t
WLQZ
before applying data to the 32
bidirectional pins DQ(31:0) to avoid bus contention.
Write Cycle 2, the Chip Enable-controlled Access in Figure 4b,
is defined by a write terminated by the latter of E1 or E2 going
inactive. The write pulse width is defined by t
WLEF
when the
write is initiated by W, and by t
ETEF
when the write is initiated
by either E1or E2 going active. For the W initiated write, unless
the outputs have been previously placed in the high-impedance
state by G, the user must wait t
WLQZ
before applying data to
The UT8R128K32 SRAM incorporates special design, layout,
and process features which allows operation in a limited
radiation environment.
Table 2. Radiation Hardness Design Specifications
1
Total Dose
Heavy Ion
Error Rate
2
300K
8.9x10
-10
rad(Si)
Errors/Bit-Day
Notes:
1. The SRAM is immune to latchup to particles >100MeV-cm
2
/mg.
2. 10% worst case particle environment, Geosynchronous orbit, 100 mils of
Aluminum.
Supply Sequencing
No supply voltage sequencing is required between V
DD1
and
V
DD2
.
3
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD1
V
DD2
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 2.0V
-0.3 to 3.8V
-0.3 to 3.8V
-65 to +150°C
1.2W
+150°C
5°C/W
±
5 mA
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD1
V
DD2
T
C
V
IN
PARAMETER
Positive supply voltage
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
1.7 to 1.9V
3.0 to 3.6V
(C) Screening: -55 to +125°C
(W) Screening: -40 to +125°C
0V to V
DD2
4
DC ELECTRICAL CHARACTERISTICS (Pre and Post-Radiation)*
(-55°C to +125°C for (C) screening and -40°C to +125°C for (W) screening)
SYMBOL
V
IH
V
IL
V
OL
V
OH
C
IN1
C
IO1
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input capacitance
Bidirectional I/O capacitance
Input leakage current
Three-state output leakage current
I
OL
= 8mA,V
DD2
=V
DD2
(min)
I
OH
= -4mA,V
DD2
=V
DD2
(min)
ƒ
= 1MHz @ 0V
ƒ
= 1MHz @ 0V
V
IN
= V
DD2
and V
SS
V
O
= V
DD2
and V
SS
V
DD2
= V
DD2
(max), G = V
DD2
(max)
V
DD2
= V
DD2
(max), V
O
= V
DD2
V
DD2
= V
DD2
(max), V
O
= V
SS
Inputs : V
IL
= V
SS
+ 0.2V,
V
IH
= V
DD2
-0.2V , I
OUT
= 0
V
DD1
= V
DD1
(max), V
DD2
= V
DD2
(max)
Inputs : V
IL
= V
SS
+ 0.2V,
V
IH
= V
DD2
-0.2V, I
OUT
= 0
V
DD1
= V
DD1
(max), V
DD2
= V
DD2
(max)
Inputs : V
IL
= V
SS
+ 0.2V,
V
IH
= V
DD2
-0.2V , I
OUT
= 0
V
DD1
= V
DD1
(max), V
DD2
= V
DD2
(max)
Inputs : V
IL
= V
SS
+ 0.2V,
V
IH
= V
DD2
-0.2V, I
OUT
= 0
V
DD1
= V
DD1
(max), V
DD2
= V
DD2
(max)
CMOS inputs , I
OUT
= 0
E1 = V
DD2
-0.2, E2 = GND
V
DD1
= V
DD1
(max), V
DD2
= V
DD2
(max)
CMOS inputs , I
OUT
= 0
E1 = V
DD2
- 0.2, E2 = GND,
V
DD1
= V
DD1
(max), V
DD2
= V
DD2
(max)
85
mA
-2
-2
.8*V
DD2
12
12
2
2
CONDITION
MIN
.7*V
DD2
.3*V
DD2
.2*V
DD2
MAX
UNIT
V
V
V
V
pF
pF
µA
µA
I
OS2, 3
Short-circuit output current
-100
+100
mA
I
DD1
(OP
1
)
V
DD1
Supply current operating
@ 1MHz
15
mA
I
DD1
(OP
2
)
V
DD1
Supply current operating
@ 66MHz,
I
DD2
(OP
1
)
V
DD2
Supply current operating
@ 1MHz
1
mA
I
DD2
(OP
2
)
V
DD2
Supply current operating
@ 66MHz,
12
mA
I
DD1
(SB)
4
I
DD2
(SB)
4
I
DD1
(SB)
4
I
DD2
(SB)
4
Supply current standby @ 0Hz
11
100
11
100
mA
µA
mA
µA
Supply current standby A(16:0)
@ 66MHz
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 3.0E5 rad(Si).
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
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