REVISIONS
LTR
A
DESCRIPTION
Correct title to accurately describe device function.
Add device types 03 and 04. - CFS
Correct package case outline X dimension Q and footnote 5/ Q to figure 1.
Update radiation features in section 1.5 and update boilerplate paragraphs as
required by the Mil-PRF-38535. Delete class M requirements throughout. -
MAA
DATE (YR-MO-DA)
07-02-22
APPROVED
Thomas M. Hess
B
13-06-07
Thomas M. Hess
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
B
15
B
16
B
17
B
18
REV
SHEET
PREPARED BY
Charles F. Saffle
CHECKED BY
Charles F. Saffle
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
Thomas M. Hess
DRAWING APPROVAL DATE
06-04-21
AMSC N/A
REVISION LEVEL
SIZE
CAGE CODE
B
19
B
20
B
21
B
1
B
22
B
2
B
23
B
3
B
24
B
4
B
25
B
5
B
26
B
6
B
27
B
7
B
28
B
8
B
29
B
9
B
30
B
10
B
31
B
11
B
32
B
12
B
13
B
14
STANDARD
MICROCIRCUIT
DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
MICROCIRCUIT, DIGITAL, CMOS, RADIATION
HARDENED, PROGRAMMABLE SKEW CLOCK
BUFFER, MONOLITHIC SILICON
B
A
67268
SHEET
5962-05214
1 OF 32
5962-E281-12
DSCC FORM 2233
APR 97
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and
space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
R
05214
01
Q
X
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
Generic number
UT7R995
UT7R995
Circuit function
Programmable skew clock buffer
Programmable skew clock buffer,
extended industrial temperature range 1/
Programmable skew clock buffer, with
crystal oscillator support
Programmable skew clock buffer,
extended industrial temperature range,
with crystal oscillator support 1/
03
UT7R995C
04
UT7R995C
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q or V
Device requirements documentation
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
See figure 1.
Terminals
48
Package style
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V.
__________
1/ Device types 02 and 04 have an extended industrial temperature range of -40°C to +125°C.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-05214
SHEET
B
2
1.3 Absolute maximum ratings.
1/ 2/
-0.3 V dc to 4.0 V dc
-0.3 V dc to 4.0 V dc
-0.3 V to V
DD
+ 0.3 V
-0.3 V to V
DD
Qn + 0.3 V
-0.3 V to V
DD
+ 0.3 V
±10
mA
1.5 W
-65°C to +150°C
+150°C 3/
+280°C
15°C/W
Core power supply voltage range (V
DD
) .....................................................................
Output bank power supply voltage range:
V
DD
Q1, V
DD
Q3, and V
DD
Q4 .................................................................................
Voltage on any input pin (V
IN
) ....................................................................................
Voltage on any clock bank output (V
OUT
)....................................................................
Voltage on XTAL2 and LOCK outputs (V
O
) ................................................................
DC input current (I
I
) ....................................................................................................
Maximum power dissipation (P
D
) ...............................................................................
Storage temperature range (T
STG
)..............................................................................
Maximum junction temperature (T
J
) ...........................................................................
Lead temperature (soldering, 10 seconds).................................................................
Thermal resistance, junction-to-case (θ
JC
) .................................................................
1.4 Recommended operating conditions.
Core power supply voltage range (V
DD
) ..................................................................... 3.0 V dc to 3.6 V dc
Output bank power supply voltage range:
V
DD
Q1, V
DD
Q3, and V
DD
Q4 ................................................................................. 2.25 V dc to 3.6 V dc
Voltage on any configuration and control input pin (V
IN
) ............................................ 0 V to V
DD
Voltage on any bank output (V
OUT
) ............................................................................. 0 V to V
DD
Qn
Case operating temperature range (T
C
):
Device types 01 and 03 ...................................................................................... -55°C to +125°C
Device types 02 and 04 ...................................................................................... -40°C to +125°C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) ............................... 100 Krads(Si)
Single event phenomenon (SEP):
2
No single event latch-up (SEL) occurs at effective LET (see 4.4.4.5) ..................... ≤ 109 MeV-cm /mg 4/ 5/
2
No single event upset (SEU) occurs at effective LET (see 4.4.4.5).......................... ≤109 MeV-cm /mg 5/ 6/
2
No single event transient (SET) occurs at effective LET (50 MHz) (see 4.4.4.5) ..... ≤ 74 MeV-cm /mg 5/
14
2
Neutron fluence .......................................................................................................... 1x10 n/cm 5/
________
1/
Stresses above the absolute maximum ratings may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond limits indicated in the operational sections of
this specification is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability and performance.
All voltages are referenced to V
SS
, or ground.
Maximum junction temperature may be increased to +175°C during burn-in and steady-state life.
Worst case temperature and voltage of T
C
= +125°C, V
DD
= 3.6 V, V
DD
Q1/Q3/Q4 = 3.6 V.
Limits are guaranteed by design or process, but not production tested unless specified by the customer through the
purchase order or contract.
Worst case temperature and voltage of T
C
= +25°C, V
DD
= 3.0 V V
DD
Q1/Q3/Q4 = 2.25 V.
2/
3/
4/
5/
6/
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-05214
SHEET
B
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535
- Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard Microcircuits.
- Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103
MIL-HDBK-780
- List of Standard Microcircuit Drawings.
- Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://quicksearch.dla.mil/
or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.
ASTM INTERNATIONAL (ASTM)
ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion
Irradiation of Semiconductor Devices.
(Copies of this document are available online at
http://www.astm.org
or from ASTM International, 100 Barr Harbor Drive,
P.O. Box C700, West Conshohocken, PA 19428-2959.)
2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V.
3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and on figure 1.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2.
3.2.3 Functional block diagram. The functional block diagram shall be as specified on figure 3.
3.2.4 Timing waveforms and test circuits. The timing waveforms and test circuits shall be as specified on figure 4.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-05214
SHEET
B
4
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the
full case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table IA.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall
be provided with each lot of microcircuits delivered to this drawing.
.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-05214
SHEET
B
5
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