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5962L9960702TUC

产品描述Standard SRAM, 512KX8, 25ns, CMOS, CDFP36, BOTTOM BRAZED, CERAMIC, DFP-36
产品类别存储    存储   
文件大小252KB,共45页
制造商Cobham PLC
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5962L9960702TUC概述

Standard SRAM, 512KX8, 25ns, CMOS, CDFP36, BOTTOM BRAZED, CERAMIC, DFP-36

5962L9960702TUC规格参数

参数名称属性值
厂商名称Cobham PLC
包装说明DFP, FL36,.5
Reach Compliance Codeunknown
最长访问时间25 ns
I/O 类型COMMON
JESD-30 代码R-CDFP-F36
JESD-609代码e4
内存密度4194304 bit
内存集成电路类型STANDARD SRAM
内存宽度8
功能数量1
端子数量36
字数524288 words
字数代码512000
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-40 °C
组织512KX8
输出特性3-STATE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装代码DFP
封装等效代码FL36,.5
封装形状RECTANGULAR
封装形式FLATPACK
并行/串行PARALLEL
电源3.3 V
认证状态Not Qualified
筛选级别MIL-PRF-38535 Class T
座面最大高度3.05 mm
最大待机电流0.002 A
最小待机电流2 V
最大压摆率0.18 mA
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子面层GOLD
端子形式FLAT
端子节距1.27 mm
端子位置DUAL
总剂量50k Rad(Si) V
宽度12.192 mm
Base Number Matches1

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REVISIONS
LTR
A
B
DESCRIPTION
Added Q level parts to drawing. Corrections to paragraph 1.5.
Footnote changes to Table 1, including removal of footnote 8 . - glg
Added case outline X to drawing. Corrected
E1 terminal symbol to
E.
Corrected table 1 footnotes. Corrections to figure 4. Added 10
second data retention table to figure 5. - glg
DATE (YR-MO-DA)
00-03-20
APPROVED
Raymond Monnin
00-05-25
Raymond Monnin
C
D
E
F
Corrections to paragraph 1.5 and addition of footnote. Corrections to
sheet 16, 1 second data retention test table. - glg
Boilerplate update, added appendix B for die. ksr
Corrected CAGE code typo, 67264 changed to 67268. Updated
boilerplate. ksr
Add 02 device representing an extended temperature device.
Corrected (SEP) effective with no latch-up in paragraph 1.5; was 90.5
MeV-cm
2
/mg changed to 80 MeV-cm
2
/mg ksr
Added devices 03 and 04, updated Table I.
ksr
Boilerplate update and part of five year review. tcr
Added devices 05 and 06; added case outline Y, and updated Table I.
Added additional die information to appendix B. Made corrections to
case U dimension table. ksr
00-08-31
01-05-04
02-03-18
02-11-04
Raymond Monnin
Raymond Monnin
Raymond Monnin
Raymond Monnin
G
H
J
02-12-08
07-12-13
09-08-13
Raymond Monnin
Robert M. Heber
Charles F. Saffle
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
J
35
J
15
J
36
J
16
J
37
J
17
J
38
J
18
REV
J
39
J
19
J
40
J
20
J
41
J
21
J
1
J
22
J
2
J
23
J
3
J
24
J
4
J
25
J
5
J
26
J
6
J
27
J
7
J
28
J
8
J
29
J
9
J
30
J
10
J
31
J
11
J
32
J
12
J
33
J
13
J
34
J
14
SHEET
PREPARED BY
Gary L. Gross
CHECKED BY
Jeff Bowling
APPROVED BY
Raymond Monnin
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS
AVAILABLE
FOR USE BY All
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
DRAWING APPROVAL DATE
99-09-28
REVISION LEVEL
J
MICROCIRCUIT, MEMORY, DIGITAL,
CMOS, 512K x 8-BIT, RADIATION-
HARDENED, LOW VOLTAGE SRAM,
MONOLITHIC SILICON
SIZE
A
SHEET
1 OF
41
5962-E500-08
CAGE CODE
67268
5962-99607
DSCC FORM 2233
APR 97

 
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