SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBFN120-G Thru CDBFN1100-G
Voltage: 20 to 100 Volts
Current: 1.0 Amp
RoHS Device
Features
-
Batch process design, excellent powe
dissipation offers better reverse leakage
current .
-Low profile surface mounted application
in order to optimize board space.
-Low power loss, high efficiency.
-High current capability, low forward voltage
dorp.
-High surge capability.
-Guardring for overvoltage protection.
-Very iny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon
junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
SOD-323
0.106 (2.70)
0.091 (2.3)
0.012(0.3) Typ.
0.057 (1.45)
0.041 (1.05)
0.047 (1.2)
0.031 (0.8)
Mechanical data
0.016(0.4) Typ.
0.016(0.4) Typ.
-Case: JEDEC SOD-323, Molded plastic
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
Dimensions in inches and (millimeter)
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.008 gram(approx.).
Maximum Ratings
(at T
A
=25
O
C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Maximum RMS voltage
Continuous reverse voltage
Maximum forward voltage @I
F
=1.0A
Forward rectified current
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on V
R
=V
RRM
@T
A
=25
C
@T
A
=125
C
Typ. thermal resistance, junction to ambient air
Typ. diode junction capacitance (Note 1)
Operating junction temperature
Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
O
O
Symbol
CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN
Unit
120-G
20
14
20
130-G
30
21
30
0.55
140-G
40
28
40
150-G
50
35
50
160-G
60
42
60
180-G
80
56
80
1100-G
100
70
100
V
RRM
V
RMS
V
R
V
F
I
O
I
FSM
V
V
V
V
A
A
0.70
0.85
1.0
30
0.5
10
90
120
-55 to +125
-65 to +150
-55 to +150
O
I
R
R
θJA
C
J
T
J
T
STG
mA
C/W
pF
O
C
C
O
REV:D
QW-BB022
Page 1
Comchip Technology CO., LTD.
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
Ratings and Characteristic Curves(CDBFN120-G Thru CDBFN1100-G)
Fig.1 Typical Forward Current
Derating Curve
1.3
Fig.2 Typical Forward Characteristics
100
I
F
, Instantaneous Forward Current (A)
I
O
, Averaged Forward Current (A)
1.0
5
FN1
CD B
10
CD
N1
BF
20
~
-G
B
CD
1
FN
-G
40
CD B
2
FN1
1
CD
N1
BF
50
~C
-G
-
1
FN
DB
D
~C
-G
60
0-G
11
BFN
~CD
0-G
00-G
10
N1
BF
14
BFN
~CD
0 -G
0.5
CD
8
N1
BF
0-G
0-G
0.1
T
J
=25 C
Pulse width 300μs
1% duty cycle
O
0
0
50
100
150
O
200
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
T
A
, Ambient TemperatureC)
(
V
F
, Forward Voltage (V)
Fig.3 Maximum Non-repetitive Peak
Forward Surge Current
30
350
Fig.4 Typical Junction Capacitance
I
FSM
, Peak Forward Surge Current (A)
C
J
, Junction Capacitance (pF)
24
T
J
=25
O
C
8.3ms single half
sine wave, JEDEC
method
300
250
200
150
100
50
0
0.01
18
12
6
0
1
10
100
0.1
1
10
100
Number of Cycles at 60Hz
V
R
, Reverse Voltage (V)
Fig.5 Typical Reverse Characteristics
100
I
R
, Reverse Current (mA)
10
1
T
J
=75 C
O
0.1
T
J
=25 C
O
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
REV:D
QW-BB022
Page 2
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