INTEGRATED CIRCUITS
74LVCU04A
Hex inverter
Product specification
1998 Jul 29
Philips
Semiconductors
Philips Semiconductors
Product specification
Hex inverter
74LVCU04A
FEATURES
•
Wide supply voltage range of 1.2 V to 3.6 V
•
In accordance with JEDEC standard no. 8-1A.
•
Inputs accept voltages up to 5.5 V
•
CMOS low power consumption
•
Direct interface with TTL levels
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25°C; t
r
= t
f
v2.5
ns
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
PARAMETER
Propagation delay
nA to nY
Input capacitance
Power dissipation capacitance per gate
DESCRIPTION
The 74LVCU04A is a high-performance, low-power, low-voltage,
Si-gate CMOS device and superior to most advanced CMOS
compatible TTL families.
The 74LVCU04A is a general purpose hex inverter. Each of the six
inverters is a single stage with unbuffered outputs.
CONDITIONS
C
L
= 50 pF;
V
CC
= 3.3 V
Notes 1 and 2
TYPICAL
4.3
7.8
16.8
UNIT
ns
pF
pF
NOTES:
1. C
PD
is used to determine the dynamic power dissipation(P
D
in
µW)
V
CC2
x f
i
)
(C
L
V
CC2
f
o
) where:
P
D
= C
PD
f
i
= input frequency in MHz; C
L
= output load capacity in pF;
f
o
= output frequency in MHz; V
CC
= supply voltage in V;
(C
L
V
CC2
f
o
) = sum of the outputs.
2. The condition is V
I
= GND to V
CC.
ORDERING INFORMATION
PACKAGES
14-Pin Plastic SO
14-Pin Plastic SSOP Type II
14-Pin Plastic TSSOP Type I
TEMPERATURE RANGE
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
OUTSIDE NORTH AMERICA
74LVCU04A D
74LVCU04A DB
74LVCU04A PW
NORTH AMERICA
74LVCU04A D
74LVCU04A DB
74LVCU04APW DH
PKG. DWG. #
SOT108-1
SOT337-1
SOT402-1
PIN CONFIGURATION
1A
1Y
2A
2Y
3A
3Y
GND
1
2
3
4
5
6
7
14
13
12
11
10
9
8
V
CC
6A
6Y
5A
LOGIC SYMBOL (IEEE/IEC)
1
1
2
3
1
4
5
1
6
9
5Y
4A
4Y
13
11
1
8
1
10
1
12
SV00396
SV00398
PIN DESCRIPTION
PIN NUMBER
1, 3, 5, 9, 11, 13
2, 4, 6, 8, 10, 12
7
14
SYMBOL
1A – 6A
1Y – 6Y
GND
V
CC
NAME AND FUNCTION
Data inputs
Data outputs
Ground (0 V)
Positive supply voltage
1998 Jul 29
2
853–2099 19800
Philips Semiconductors
Product specification
Hex inverter
74LVCU04A
LOGIC SYMBOL
1
1A
1Y
2
LOGIC DIAGRAM (ONE INVERTER)
V
CC
V
CC
3
2A
2Y
4
nA
100
W
nY
5
3A
3Y
6
9
4A
4Y
8
SV00409
11
5A
5Y
10
FUNCTION TABLE
13
6A
6Y
12
INPUTS
nA
SV00397
OUTPUTS
nY
H
L
L
H
NOTES:
H = HIGH voltage level
L = LOW voltage level
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL
V
CC
V
CC
V
I
V
I/O
T
amb
t
r
, t
f
PARAMETER
DC supply voltage (for max. speed performance)
DC supply voltage (for low-voltage applications)
DC input voltage range
DC output voltage range; output HIGH or LOW state
DC input voltage range; output 3-State
Operating free-air temperature range
Input rise and fall times
V
CC
= 1.2 to 2.7V
V
CC
= 2.7 to 3.6V
CONDITIONS
MIN
2.7
1.2
0
0
0
–40
0
0
MAX
3.6
3.6
5.5
V
CC
5.5
+85
20
10
UNIT
V
V
V
V
°C
ns/V
1998 Jul 29
3
Philips Semiconductors
Product specification
Hex inverter
74LVCU04A
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
V
CC
I
IK
V
I
I
OK
V
I/O
I
O
I
GND
, I
CC
T
stg
P
TOT
PARAMETER
DC supply voltage
DC input diode current
DC input voltage
DC output diode current
DC output voltage; output HIGH or LOW
DC input voltage; output 3-State
DC output source or sink current
DC V
CC
or GND current
Storage temperature range
Power dissipation per package
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
above +70°C derate linearly with 8 mW/K
above +60°C derate linearly with 5.5 mW/K
V
I
t
0
Note 2
V
O
uV
CC
or V
O
t
0
Note 2
Note 2
V
O
= 0 to V
CC
CONDITIONS
RATING
–0.5 to +6.5
–50
–0.5 to +6.5
"50
–0.5 to V
CC
+0.5
–0.5 to 6.5
"50
"100
–65 to +150
500
500
UNIT
V
mA
V
mA
V
mA
mA
°C
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
V
CC
= 1.2 V;V
OL
(max) = 0.5 V; I
O
= -100
mA
V
CC
= 2.0 V; V
OL
(max) = 0.5 V; I
O
= -100
mA
V
IH
HIGH level Input voltage
V
CC
= 2.7 V; V
OL
(max) = 0.5 V; I
O
= -100
mA
V
CC
= 3.0 V; V
OL
(max) = 0.5 V; I
O
= -100
mA
V
CC
= 3.6 V; V
OL
(max) = 0.5 V; I
O
= -100
mA
V
CC
= 1.2 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100
mA
V
CC
= 2.0 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100
mA
V
IL
LOW level Input voltage
V
CC
= 2.7 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100
mA
V
CC
= 3.0 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100
mA
V
CC
= 3.6 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100
mA
V
CC
= 2.7 V; V
CC
or GND; I
O
= -12 mA
V
O
OH
HIGH level output voltage
V
CC
= 3.0 V; V
CC
or GND; I
O
= -100mA
V
CC
= 3.0 V; V
CC
or GND; I
O
= -12 mA
V
CC
= 3.0 V; V
CC
or GND; I
O
= -24 mA
V
CC
= 2.7 V; V
CC
or GND; I
O
= 12 mA
V
OL
LOW level output voltage
V
CC
= 3.0 V; V
CC
or GND; 12mA; I
O
= 100µA
V
CC
= 3.0 V; V
CC
or GND; I
O
= 24mA
I
I
I
CC
Input leakage current
Quiescent supply current
V
CC
= 3 6 V; 5 5 V or GND; Not for I/O pins
3.6 5.5
V
CC
= 3.6 V; V
CC
or GND; I
O
= 0
"0
1
"0.1
0.1
V
CC
*0.5
V
CC
*0.2
V
CC
*0.6
V
CC
*1.0
0.40
0.20
0.55
"5
10
µA
µA
V
V
CC
V
Temp = -40°C to +85°C
MIN
V
CC
1.2
1.8
2.0
2.4
GND
0.6
0.6
1.0
1.2
V
V
TYP
1
MAX
UNIT
NOTE:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25°C.
1998 Jul 29
4
Philips Semiconductors
Product specification
Hex inverter
74LVCU04A
AC CHARACTERISTICS
GND = 0 V; t
r
= t
f
v
2.5 ns; C
L
= 50 pF; R
L
= 500W; T
amb
= –40_C to +85_C
LIMITS
SYMBOL
PARAMETER
WAVEFORM
V
CC
= 3.3V
±0.3V
MIN
t
PHL
/
t
PLH
Propagation delay
nA to nY
Figure 1
–
TYP
1
2.7
MAX
4.3
V
CC
= 2.7V
MIN
–
MAX
5.3
V
CC
= 1.2V
TYP
–
ns
UNIT
NOTE:
1. These typical values are at V
CC
= 3.3V and T
amb
= 25°C.
AC WAVEFORM
V
M
= 1.5 V at V
CC
w
2.7 V
V
M
= 0.5
S
V
CC
at V
CC
< 2.7 V
V
OL
and V
OH
are the typical output voltage drop that occur with the
output load.
V
I
nA INPUT
GND
t
PHL
V
OH
nY OUTPUT
V
OL
V
M
20
t
PLH
40
V
M
80
g fs
(mA/V)
60
SV00395
10
0
0
1
2
3
VCC (V)
4
Figure 1. Input (nA) to output (nY) propagation delays.
R
bias
= 560 kW
SV00410
V
CC
Figure 3. Typical forward transconductance g
fs
as a function of
the supply voltage V
CC
at T
amb
= 25°C.
output
100
mF
0.47
mF
input
Vi ~
(f = 1 kHz)
A i
o ~
GND
SV00323
Figure 2. Test set-up for measuring forward transconductance
g
fs
= di
o
/dv
i
at v
o
is constant (see also graph Figure 3).
1998 Jul 29
5
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