79C0408
4 Megabit (512k x 8-bit)
EEPROM MCM
CE
1
RS
E
R
/B
WE
OE
A
0-16
128K x 8
128K x 8
128K x 8
128K x 8
CE
2
CE
3
CE
4
I/O
0-7
Memory
Logic Diagram
F
EATURES
:
• Four 128k x 8-bit EEPROMs MCM
• R
AD
-P
AK
® radiation-hardened against natural
space radiation
• Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effects
- SEL > 120 MeV/mg/cm
2
- SEU > 90 MeV/mg/cm
2
read mode
- SEU = 18 MeV/mg/cm
2
write mode
• Package:
• - 40 pin R
AD
-P
AK
® flat pack
• - 40 pin X-Ray Pak
TM
flat pack
• - 40 pin Rad-Tolerant flat pack
• High speed:
- 120, 150, and 200 ns maximum access times
available
• Data Polling and Ready/Busy signal
• Software data protection
• Write protection by RES pin
• High endurance
- 10,000 erase/write (in Page Mode),
- 10 year data retention
• Page write mode: 1 to 128 byte page
• Low power dissipation
- 80 mW/MHz active mode
- 440 µ W standby mode
D
ESCRIPTION
:
Maxwell Technologies’ 79C0408 multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, depending upon space mission. Using Maxwell Technol-
ogies’ patented radiation-hardened R
AD
-P
AK
® MCM
packaging technology, the 79C0408 is the first radiation-hard-
ened 4 Megabit MCM EEPROM for space applications. The
79C0408 uses four 1 Megabit high-speed CMOS die to yield a
4 Megabit product. The 79C0408 is capable of in-system elec-
trical Byte and Page programmability. It has a 128 bytes Page
Programming function to make its erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C0408, hardware data protection is provided with the
RES pin, in addition to noise protection on the WE signal.
Software data protection is implemented using the JEDEC
optional standard algorithm.
Maxwell Technologies' patented R
AD
-P
AK
® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, the R
AD
-P
AK
® package provides
greater than 100 krad (Si) radiation dose tolerance. This prod-
uct is available with screening up to Class K.
10.13.04 Rev 15
All data sheets are subject to change without notice
1
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
T
ABLE
1. 79C0408 P
IN
D
ESCRIPTION
P
IN
16-9, 32-31,
28, 30, 8, 33,
7, 36, 6
17-19, 22-26
29
2, 3, 39, 38
34
1, 27, 40
4, 20, 21, 37
5
35
S
YMBOL
A0 to A16
D
ESCRIPTION
Address Input
79C0408
I/O0 to I/O7
OE
CE1-4
WE
VCC
VSS
RDY/BUSY
RES
Data Input/Output
Output Enable
Chip Enable 1 through 4
Write Enable
Power Supply
Ground
Ready/Busy
Reset
Memory
T
ABLE
2. 79C0408 A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
Supply Voltage
Input Voltage
Package Weight
Thermal Resistance ( RP Package)
Operating Temperature Range
Storage Temperature Range
S
YMBOL
V
CC
V
IN
RP
RT
Tjc
T
OPR
T
STG
-55
-65
M
IN
-0.6
-0.5
1
M
AX
7.0
7.0
23
10
7.3
125
150
°
C/W
°
C
°
C
U
NIT
V
V
Grams
1. V
IN
MIN
= -3.0V
FOR PULSE WIDTH
<50
NS
.
T
ABLE
3. 79C0408 R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
Supply Voltage
Input Voltage
RES_PIN
Case Operating Temperature
1. V
IL
min = -1.0V for pulse width < 50 ns
S
YMBOL
V
CC
V
IL
V
IH
V
H
T
C
M
IN
4.5
-0.3
1
2.2
V
CC
-0.5
-55
M
AX
5.5
0.8
V
CC
+0.3
V
CC
+1
125
U
NIT
V
V
V
V
°
C
10.13.04 Rev 15
All data sheets are subject to change without notice
2
©2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
1. I
LI
on RES = 100 uA max.
2. Only one CE\ Active.
79C0408
T
ABLE
7. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
R
EAD
O
PERATIONS1
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Access Time CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Chip Enable Access Time OE = V
IL
, WE = V
IH
-120
-150
-200
Output Enable Access Time CE = V
IL
, WE = V
IH
-120
-150
-200
Output Hold to Address Change CE = OE = V
IL
, WE = V
IH
-120
-150
-200
Output Disable to High-Z
2
CE = V
IL
, WE = V
IH
-120
-150
-200
CE = OE = V
IL
, WE = V
IH
-120
-150
-200
RES to Output Delay CE = OE = V
IL
, WE = V
IH 3
-120
-150
-200
S
YMBOL
t
ACC
S
UBGROUPS
9, 10, 11
--
--
--
t
CE
9, 10, 11
--
--
--
t
OE
9, 10, 11
0
0
0
t
OH
9, 10, 11
0
0
0
t
DF
9, 10, 11
0
0
0
t
DFR
9, 10, 11
0
0
0
t
RR
9, 10, 11
--
--
--
400
450
650
300
350
450
ns
50
50
60
--
--
--
ns
75
75
125
ns
120
150
200
ns
120
150
200
ns
M
IN
M
AX
U
NIT
ns
Memory
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
2.
t
DF
and t
DFR
are defined as the time at which the output becomes an open circuit and data is no longer driven.
3. Guaranteed by design.
10.13.04 Rev 15
All data sheets are subject to change without notice
4
©2004 Maxwell Technologies
All rights reserved.
4 Megabit (512k x 8-bit) EEPROM MCM
79C0408
T
ABLE
8. 79C0408 AC E
LECTRICAL
C
HARACTERISTICS FOR
W
RITE
O
PERATIONS
(V
CC
= 5V ±10%, T
A
= -55
TO
+125°C)
P
ARAMETER
Address Setup Time
-120
-150
-200
Chip Enable to Write Setup Time (WE Controlled)
-120
-150
-200
Write Pulse Width
CE Controlled
-120
-150
-200
WE Controlled
-120
-150
-200
Address Hold Time
-120
-150
-200
Data Setup Time
-120
-150
-200
Data Hold Time
-120
-150
-200
Chip Enable Hold Time (WE Controlled)
-120
-150
-200
Write Enable to Write Setup Time (CE Controlled)
-120
-150
-200
Write Enable Hold Time (CE Controlled)
-120
-150
-200
S
YMBOL
t
AS
S
UBGROUPS
9, 10, 11
0
0
0
t
CS
9, 10, 11
0
0
0
9, 10, 11
t
CW
200
250
350
t
WP
200
250
350
t
AH
9, 10, 11
150
150
200
t
DS
9, 10, 11
75
100
150
t
DH
9, 10, 11
10
10
10
t
CH
9, 10, 11
0
0
0
t
WS
9, 10, 11
0
0
0
t
WH
9, 10, 11
0
0
0
--
--
--
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
ns
--
--
--
--
--
--
ns
--
--
--
ns
M
IN1
M
AX
U
NIT
ns
Memory
10.13.04 Rev 15
All data sheets are subject to change without notice
5
©2004 Maxwell Technologies
All rights reserved.
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